Fairchild BC846AMTF, BC846BMTF, BC846CMTF, BC847AMTF, BC847BMTF Schematic [ru]
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August 2006
BC846BC850
tm
NPN Epitaxial Silicon Transistor
Features
•Switching and Amplifier Applications
•Suitable for automatic insertion in thick and thin-film circuits
• Low Noise: BC849, BC850 |
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• Complement to BC856 ... BC860 |
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2 |
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1 SOT-23 |
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1. Base |
2. Emitter 3. Collector |
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Absolute Maximum Ratings* Ta = 25°C unless otherwise noted |
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Symbol |
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Parameter |
Value |
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Units |
VCBO |
Collector-Base Voltage |
: BC846 |
80 |
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V |
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: BC847/850 |
50 |
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V |
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: BC848/849 |
30 |
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V |
VCEO |
Collector-Emitter Voltage |
: BC846 |
65 |
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V |
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: BC847/850 |
45 |
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V |
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: BC848/849 |
30 |
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V |
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VEBO |
Emitter-Base Voltage |
: BC846/847 |
6 |
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V |
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: BC848/849/850 |
5 |
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V |
IC |
Collector Current (DC) |
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100 |
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mA |
PC |
Collector Power Dissipation |
310 |
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mW |
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TJ |
Junction Temperature |
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150 |
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°C |
TSTG |
Storage Temperature |
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-65 ~ 150 |
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°C |
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Electrical Characteristics* Ta=25°C unless otherwise noted
Symbol |
Parameter |
Test Condition |
Min. |
Typ. |
Max. |
Units |
ICBO |
Collector Cut-off Current |
VCB=30V, IE=0 |
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15 |
nA |
hFE |
DC Current Gain |
VCE=5V, IC=2mA |
110 |
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800 |
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VCE (sat) |
Collector-Emitter Saturation Voltage |
IC=10mA, IB=0.5mA |
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90 |
250 |
mV |
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IC=100mA, IB=5mA |
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200 |
600 |
mV |
VBE (sat) |
Collector-Base Saturation Voltage |
IC=10mA, IB=0.5mA |
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700 |
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mV |
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IC=100mA, IB=5mA |
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900 |
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mV |
VBE (on) |
Base-Emitter On Voltage |
VCE=5V, IC=2mA |
580 |
660 |
700 |
mV |
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VCE=5V, IC=10mA |
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720 |
mV |
fT |
Current Gain Bandwidth Product |
VCE=5V, IC=10mA, |
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300 |
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MHz |
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f=100MHz |
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Cob |
Output Capacitance |
VCB=10V, IE=0, f=1MHz |
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3.5 |
6 |
pF |
Cib |
Input Capacitance |
VEB=0.5V, IC=0, f=1MHz |
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9 |
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pF |
NF |
Noise Figure |
VCE= 5V, IC= 200µA |
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: BC846/847/848 |
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2 |
10 |
dB |
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: BC849/850 |
RG=2KΩ, f=1KHz |
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1.2 |
4 |
dB |
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: BC849 |
VCE= 5V, IC= 200µA |
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1.4 |
4 |
dB |
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: BC850 |
RG=2KΩ, f=30~15000Hz |
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1.4 |
3 |
dB |
* Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%
Transistor Silicon Epitaxial NPN BC850 -BC846
©2006 Fairchild Semiconductor Corporation |
1 |
www.fairchildsemi.com |
BC846BC850 Rev. B
hFE Classification
Classification |
A |
B |
C |
hFE |
110 ~ 220 |
200 ~ 450 |
420 ~ 800 |
Ordering Information
Device(note1) |
Device Marking |
Package |
Packing Method |
Qty(pcs) |
Pin Difinitions |
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BC846AMTF |
8AA |
SOT-23 |
Tape & Reel |
3000 |
1.Base 2.Emitter 3.Collector |
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BC846BMTF |
8AB |
SOT-23 |
Tape & Reel |
3000 |
1.Base 2.Emitter 3.Collector |
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BC846CMTF |
8AC |
SOT-23 |
Tape & Reel |
3000 |
1.Base 2.Emitter 3.Collector |
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BC847AMTF |
8BA |
SOT-23 |
Tape & Reel |
3000 |
1.Base 2.Emitter 3.Collector |
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BC847BMTF |
8BB |
SOT-23 |
Tape & Reel |
3000 |
1.Base 2.Emitter 3.Collector |
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BC847CMTF |
8BC |
SOT-23 |
Tape & Reel |
3000 |
1.Base 2.Emitter 3.Collector |
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BC848AMTF |
8CA |
SOT-23 |
Tape & Reel |
3000 |
1.Base 2.Emitter 3.Collector |
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BC848BMTF |
8CB |
SOT-23 |
Tape & Reel |
3000 |
1.Base 2.Emitter 3.Collector |
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BC848CMTF |
8CC |
SOT-23 |
Tape & Reel |
3000 |
1.Base 2.Emitter 3.Collector |
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BC849AMTF |
8DA |
SOT-23 |
Tape & Reel |
3000 |
1.Base 2.Emitter 3.Collector |
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BC849BMTF |
8DB |
SOT-23 |
Tape & Reel |
3000 |
1.Base 2.Emitter 3.Collector |
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BC849CMTF |
8DC |
SOT-23 |
Tape & Reel |
3000 |
1.Base 2.Emitter 3.Collector |
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BC850AMTF |
8EA |
SOT-23 |
Tape & Reel |
3000 |
1.Base 2.Emitter 3.Collector |
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BC850BMTF |
8EB |
SOT-23 |
Tape & Reel |
3000 |
1.Base 2.Emitter 3.Collector |
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BC850CMTF |
8EC |
SOT-23 |
Tape & Reel |
3000 |
1.Base 2.Emitter 3.Collector |
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Note1 : Affix “-A,-B,-C” means hFE classification.
Affix “-M” means the matte type package.
Affix “-TF” means the tape & reel type packing.
Transistor Silicon Epitaxial NPN BC850 -BC846
2 |
www.fairchildsemi.com |
BC846BC850 Rev. B
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