MMBD1701
Discrete POWER & Signal
Technologies
MMBD1701/A / 1703/A / 1704/A / 1705/A
3
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85 |
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CONNECTION |
DIAGRAMS |
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3 |
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1701 |
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3 |
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1703 |
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1 |
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2 |
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2 NC |
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1 |
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1 |
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2 |
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2 |
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1704 |
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3 |
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3 |
1705 |
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MARKING |
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SOT-23 |
1 |
MMBD1701 85 |
MMBD1701A 85A |
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MMBD1703 87 |
MMBD1703A 87A |
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MMBD1704 88 |
MMBD1704A 88A |
1 |
2 |
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1 |
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2 |
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MMBD1705 89 |
MMBD1705A 89A |
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High Conductance Low Leakage Diode
Sourced from Process 1T.
Absolute Maximum Ratings* |
TA = 25°C unless otherwise noted |
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Symbol |
Parameter |
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Value |
Units |
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WIV |
Working Inverse Voltage |
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20 |
V |
IO |
Average Rectified Current |
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50 |
mA |
IF |
DC Forward Current |
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150 |
mA |
if |
Recurrent Peak Forward Current |
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150 |
mA |
if(surge) |
Peak Forward Surge Current |
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Pulse width = 1.0 second |
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250 |
mA |
Tstg |
Storage Temperature Range |
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-55 to +150 |
°C |
TJ |
Operating Junction Temperature |
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150 |
°C |
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)These ratings are based on a maximum junction temperature of 150 degrees C.
2)These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Thermal Characteristics |
TA = 25°C unless otherwise noted |
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Symbol |
Characteristic |
Max |
Units |
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MMBD1701/A /1703/A-1705/A* |
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PD |
Total Device Dissipation |
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350 |
mW |
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Derate above 25°C |
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2.8 |
mW/°C |
RqJA |
Thermal Resistance, Junction to Ambient |
357 |
°C/W |
*Device mounted on glass epoxy PCB 1.6" X 1.6" X 0.06"; mounting pad for the collector lead min. 0.93 in2
1705/A / 1704/A / 1703/A / MMBD1701/A
ã1997 Fairchild Semiconductor Corporation |
MMBD1700 Rev. B |