September 2009
H11AG1M
Phototransistor Optocoupler
Features |
Description |
■High efficiency low degradation liquid epitaxial IRED
■Logic level compatible, input and output currents, with CMOS and LS/TTL
■High DC current transfer ratio at low input currents (as low as 200µA)
■Underwriters Laboratory (UL) recognized File #E90700, Volume 2
■IEC 60747-5-2 approved (ordering option V)
The H11AG1M device consists of a Gallium-Aluminum- Arsenide IRED emitting diode coupled with a silicon phototransistor in a dual in-line package. This device provides the unique feature of the high current transfer ratio at both low output voltage and low input current. This makes it ideal for use in low power logic circuits, telecommunications equipment and portable electronics isolation applications.
Applications
■CMOS driven solid state reliability
■Telephone ring detector
■Digital logic isolation
Schematic
ANODE 1 |
6 |
BASE |
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6 |
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6 |
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1 |
CATHODE 2 |
5 |
COL |
1 |
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6 |
N/C 3 |
4 |
EMITTER |
1 |
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Optocoupler Phototransistor — H11AG1M
©2007 Fairchild Semiconductor Corporation |
www.fairchildsemi.com |
H11AG1M Rev. 1.0.3 |
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Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only.
Symbol |
Parameters |
Value |
Units |
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TOTAL DEVICE |
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TSTG |
Storage Temperature |
-55 to +150 |
°C |
TOPR |
Operating Temperature |
-40 to +100 |
°C |
TSOL |
Lead Solder Temperature (Wave Solder) |
260 for 10 sec |
°C |
PD |
Total Device Power Dissipation @ 25°C (LED plus detector) |
260 |
mW |
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Derate Linearly From 25°C |
3.5 |
mW/°C |
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EMITTER |
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IF |
Continuous Forward Current |
50 |
mA |
VR |
Reverse Voltage |
6 |
V |
IF(pk) |
Forward Current – Peak (1µs pulse, 300pps) |
3.0 |
A |
PD |
LED Power Dissipation 25°C Ambient |
75 |
mW |
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Derate Linearly From 25°C |
1.0 |
mW/°C |
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DETECTOR |
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PD |
Detector Power Dissipation @ 25°C |
150 |
mW |
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Derate Linearly from 25°C |
2.0 |
mW/°C |
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IC |
Continuous Collector Current |
50 |
mA |
Optocoupler Phototransistor — H11AG1M
©2007 Fairchild Semiconductor Corporation |
www.fairchildsemi.com |
H11AG1M Rev. 1.0.3 |
2 |
Electrical Characteristics (TA = 25°C unless otherwise specified.)
Individual Component Characteristics
Symbol |
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Parameters |
Test Conditions |
Min. |
Typ.* |
Max. |
Units |
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EMITTER |
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VF |
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Input Forward Voltage |
IF = 1mA |
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1.25 |
1.5 |
V |
IR |
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Reverse Leakage Current |
VR = 5V, TA = 25°C |
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10 |
µA |
CJ |
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Capacitance |
V = 0, f = 1.0MHz |
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100 |
pF |
DETECTOR |
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BVCEO |
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Breakdown Voltage, Collector to Emitter |
IC = 1.0mA, IF = 0 |
30 |
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V |
BVCBO |
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Collector to Base |
IC = 100µA, IF = 0 |
70 |
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V |
BVECO |
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Emitter to Collector |
IC = 100µA, IF = 0 |
7 |
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V |
ICEO |
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Leakage Current, Collector to Emitter |
VCE = 10V, IF = 0 |
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5 |
10 |
µA |
CCE |
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Capacitance |
VCE = 10V, f = 1MHz |
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10 |
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pF |
*Typical values at TA = 25°C.
Isolation Characteristics
Symbol |
Parameter |
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Test Conditions |
Min. |
Typ.* |
Max. |
Units |
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VISO |
Input-Output Isolation Voltage |
f = 60Hz, t = 1 sec. |
7500 |
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VACPEAK |
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R |
ISO |
Isolation Resistance |
V |
= 500VDC, T = 25°C |
1011 |
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Ω |
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I-O |
A |
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Transfer Characteristics (TA = 25°C Unless otherwise specified.)
Symbol |
Characteristics |
Test Conditions |
Min. |
Typ.* |
Max. |
Units |
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DC CHARACTERISTICS |
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CTR |
Current Transfer Ratio |
IF = 1mA, VCE = 5V |
300 |
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% |
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IF = 1mA, VCE = 0.6V |
100 |
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IF = 0.2mA, VCE = 1.5V |
100 |
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VCE(SAT) |
Saturation Voltage |
IF = 2.0mA, IC = 0.5mA |
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.40 |
V |
AC CHARACTERISTICS |
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Non-Saturated Switching Times |
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ton |
Turn-On Time |
RL = 100Ω, IF = 1mA, VCC = 5V |
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5 |
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µs |
toff |
Turn-Off Time |
RL = 100Ω, IF = 1mA, VCC = 5V |
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5 |
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µs |
*Typical values at TA = 25°C
Optocoupler Phototransistor — H11AG1M
©2007 Fairchild Semiconductor Corporation |
www.fairchildsemi.com |
H11AG1M Rev. 1.0.3 |
3 |
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