Fairchild HUF75345G3, HUF75345P3, HUF75345S3S service manual

HUF75345G3, HUF75345P3, HUF75345S3S

	Data Sheet	December 2009

75A, 55V, 0.007 Ohm, N-Channel UltraFET

Power MOSFETs

These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology

achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products.

Formerly developmental type TA75345.

Ordering Information

PART NUMBER	PACKAGE	BRAND
HUF75345G3	TO-247	75345G
HUF75345P3	TO-220AB	75345P
HUF75345S3S	TO-263AB	75345S

NOTE: When ordering, use the entire part number. Add the suffix T to obtain the TO-263AB variant in tape and reel, e.g., HUF75345S3ST.

Features

•75A, 55V

•Simulation Models

-Temperature Compensated PSPICE® and SABER™ Models

-Thermal Impedance SPICE and SABER Models Available on the WEB at: www.fairchildsemi.com

•Peak Current vs Pulse Width Curve

•UIS Rating Curve

•Related Literature

-TB334, “Guidelines for Soldering Surface Mount Components to PC Boards”

Symbol

D

G

S

Packaging

	JEDEC STYLE TO-247		JEDEC TO-220AB
	SOURCE			SOURCE
	DRAIN			DRAIN
	GATE			GATE
		DRAIN
		(FLANGE)

DRAIN (TAB)

JEDEC TO-263AB

DRAIN

GATE(FLANGE)

SOURCE

Product reliability information can be found at http://www.fairchildsemi.com/products/discrete/reliability/index.html For severe environments, see our Automotive HUFA series.

All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.

©2009 Fairchild Semiconductor Corporation

HUF75345G3, HUF75345P3, HUF75345S3S Rev. B2

HUF75345G3, HUF75345P3, HUF75345S3S

Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
			UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . . VDSS	55	V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . VDGR	55	V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . . VGS	±20	V
Drain Current		75	A
Continuous (Figure 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . . . . ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . . .IDM	Figure 4
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . . EAS	Figure 6
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . . . PD	325	W
Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . . . . . .	2.17	W/oC
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	TJ, TSTG	-55 to 175	oC
Maximum Temperature for Soldering		300	oC
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . . . .TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . . Tpkg	260	oC

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTE:

1. TJ = 25oC to 150oC.

Electrical Specifications TC = 25oC, Unless Otherwise Specified

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

OFF STATE SPECIFICATIONS

Drain to Source Breakdown Voltage

BVDSS

ID = 250µA, VGS = 0V (Figure 11)

55

-

-

V

Zero Gate Voltage Drain Current

IDSS

VDS = 50V, VGS = 0V

-

-

1

µA

V

DS

= 45V, V

= 0V, T

C

= 150oC

-

-

250

µA

GS

Gate to Source Leakage Current

IGSS

VGS = ±20V

-

-

±100

nA

ON STATE SPECIFICATIONS

Gate to Source Threshold Voltage

VGS(TH)

VGS = VDS, ID = 250µA (Figure 10)

2

-

4

V

Drain to Source On Resistance

rDS(ON)

ID = 75A, VGS = 10V (Figure 9)

-

0.006

0.007

W

THERMAL SPECIFICATIONS

Thermal Resistance Junction to Case

RθJC

(Figure 3)

-

-

0.46

oC/W

Thermal Resistance Junction to Ambient

RθJA

TO-247

-

-

30

oC/W

TO-220, TO-263

-

-

62

oC/W

SWITCHING SPECIFICATIONS (VGS = 10V)

Turn-On Time

tON

VDD = 30V, ID 75A,

-

-

195

ns

RL = 0.4Ω, VGS = 10V,

Turn-On Delay Time

td(ON)

-

14

-

ns

RGS = 2.5Ω

Rise Time

tr

-

118

-

ns

Turn-Off Delay Time

td(OFF)

-

42

-

ns

Fall Time

tf

-

26

-

ns

Turn-Off Time

tOFF

-

-

98

ns

GATE CHARGE SPECIFICATIONS

Total Gate Charge

Qg(TOT)

VGS = 0V to 20V

VDD = 30V,

-

220

275

nC

ID 75A,

Gate Charge at 10V

Qg(10)

VGS = 0V to 10V

-

125

165

nC

RL = 0.4Ω

Threshold Gate Charge

Qg(TH)

VGS = 0V to 2V

-

6.8

10

nC

Ig(REF) = 1.0mA

Gate to Source Gate Charge

Qgs

(Figure 13)

-

14

-

nC

Gate to Drain “Miller” Charge

Qgd

-

58

-

nC

©2009 Fairchild Semiconductor Corporation

HUF75345G3, HUF75345P3, HUF75345S3S Rev. B2

HUF75345G3, HUF75345P3, HUF75345S3S

Electrical Specifications

TC = 25oC, Unless Otherwise Specified (Continued)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

CAPACITANCE SPECIFICATIONS

Input Capacitance

CISS

VDS = 25V, VGS = 0V,

-

4000

-

pF

Output Capacitance

COSS

f = 1MHz

-

1450

-

pF

(Figure 12)

Reverse Transfer Capacitance

CRSS

-

450

-

pF

Source to Drain Diode Specifications

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Source to Drain Diode Voltage

VSD

ISD = 75A

-

-

1.25

V

Reverse Recovery Time

trr

ISD = 75A, dISD/dt = 100A/ s

-

-

55

ns

Reverse Recovered Charge

QRR

ISD = 75A, dISD/dt = 100A/ s

-

-

80

nC

Typical Performance Curves

MULTIPLIERDISSIPATION	1.2							(A)CURRENTDRAIN
	1.0
	0.8
	0.6
POWER	0.4
								I
								,
								D
	0.2
	0	25	50	75	100	125	150	175
	0
			TC, CASE TEMPERATURE (oC)

80

60

40

20

0
25	50	75	100	125	150	175

TC, CASE TEMPERATURE (oC)

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

		TEMPERATURE				CASE TEMPERATURE
		2
		1	DUTY CYCLE - DESCENDING ORDER
			0.5
	IMPEDANCE		0.2
NORMALIZED			0.1
			0.05
			0.02
			0.01				PDM
		0.1
,	THERMAL						t1
ZθJC
							t2
							NOTES:
							DUTY FACTOR: D = t1/t2
		0.01	SINGLE PULSE				PEAK TJ = PDM x ZθJC x RθJC + TC
		10-5	10-4	10-3	10-2	10-1	100	101

t, RECTANGULAR PULSE DURATION (s)

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

©2009 Fairchild Semiconductor Corporation

HUF75345G3, HUF75345P3, HUF75345S3S Rev. B2

HUF75345G3, HUF75345P3, HUF75345S3S

Typical Performance Curves (Continued)

IDM, PEAK CURRENT (A)

2000

1000

VGS = 20V

VGS = 10V

TRANSCONDUCTANCE

100

MAY LIMIT CURRENT

IN THIS REGION

TC = 25oC FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS:

I = I25			175 - TC
			150

50
10-5	10-4	10-3	10-2	10-1	100	101

t, PULSE WIDTH (s)

FIGURE 4. PEAK CURRENT CAPABILITY

	1000		TJ = MAX RATED
			TC = 25oC
(A)
CURRENT	100		100 s
			1ms
, DRAIN
	10	OPERATION IN THIS	10ms
D		AREA MAY BE
I
		LIMITED BY rDS(ON)
		VDSS(MAX) = 55V
	1
	1	10	100	200

VDS, DRAIN TO SOURCE VOLTAGE (V)

FIGURE 5. FORWARD BIAS SAFE OPERATING AREA

	150
			VGS = 20V
	120		VGS = 10V
(A)			VGS = 7V	VGS = 5V
			VGS = 6V
CURRENT
	90
, DRAIN	60
D
I	30
				PULSE DURATION = 80 s
				DUTY CYCLE = 0.5% MAX
	0			TC = 25oC
		1	2	3	4
	0

VDS, DRAIN TO SOURCE VOLTAGE (V)

1000
	If R = 0
(A)	tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)
	If R ≠ 0
CURRENT	tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]
, AVALANCHE	100		STARTING T		= 25oC
				J
	STARTING T		= 150oC
AS		J
I
	10	0.1	1		10	100
	0.01
		tAV, TIME IN AVALANCHE (ms)

NOTE: Refer to Fairchild Application Notes AN9321 and AN9322.

FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY

	150	PULSE DURATION = 80 s
		DUTY CYCLE = 0.5% MAX
(A)	120
CURRENT	90
DRAIN	60		25oC
,
D
I	30
			175oC
				-55oC	VDD = 15V
	0
		1.5	3.0	4.5	6.0	7.5
	0

VGS, GATE TO SOURCE VOLTAGE (V)

FIGURE 7. SATURATION CHARACTERISTICS

FIGURE 8. TRANSFER CHARACTERISTICS

©2009 Fairchild Semiconductor Corporation

HUF75345G3, HUF75345P3, HUF75345S3S Rev. B2