April 2009
MOC211M, MOC212M, MOC213M
Small Ouline Optocouplers Transistor Output
Features
■UL recognized (File #E90700, Volume 2)
■VDE recognized (File #136616) (add option ‘V’ for VDE approval, e.g., MOC211VM)
■Convenient plastic SOIC-8 surface mountable package style
■Standard SOIC-8 footprint, with 0.050" lead spacing
■Compatible with dual wave, vapor phase and IR reflow soldering
■High input-output isolation of 2500 VAC(rms) guaranteed
■Minimum BVCEO of 30V guaranteed
Applications
■General purpose switching circuits
■Interfacing and coupling systems of different potentials and impedances
■Regulation feedback circuits
■Monitor and detection circuits
Description
These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic package. They are ideally suited for high density applications, and eliminate the need for through- the-board mounting.
Schematic |
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ANODE |
1 |
8 |
N/C |
CATHODE 2 |
7 |
BASE |
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N/C 3 |
6 |
COLLECTOR |
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N/C |
4 |
5 |
EMITTER |
Output Transistor Optocouplers Ouline Small — MOC213M MOC212M, MOC211M,
©2005 Fairchild Semiconductor Corporation |
www.fairchildsemi.com |
MOC211M, MOC212M, MOC213M Rev. 1.0.1 |
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Absolute Maximum Ratings (TA = 25°C Unless otherwise specified)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only.
Symbol |
Rating |
Value |
Unit |
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EMITTER |
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IF |
Forward Current – Continuous |
60 |
mA |
IF (pk) |
Forward Current – Peak (PW = 100µs, 120pps) |
1.0 |
A |
VR |
Reverse Voltage |
6.0 |
V |
PD |
LED Power Dissipation @ TA = 25°C |
90 |
mW |
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Derate above 25°C |
0.8 |
mW/°C |
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DETECTOR |
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VCEO |
Collector-Emitter Voltage |
30 |
V |
VECO |
Emitter-Collector Voltage |
7.0 |
V |
VCBO |
Collector-Base Voltage |
70 |
V |
IC |
Collector Current-Continuous |
150 |
mA |
PD |
Detector Power Dissipation @ TA = 25°C |
150 |
mW |
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Derate above 25°C |
1.76 |
mW/°C |
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TOTAL DEVICE |
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VISO |
Input-Output Isolation Voltage (f = 60Hz, t = 1 min.)(1)(2)(3) |
2500 |
Vac(rms) |
PD |
Total Device Power Dissipation @ TA = 25°C |
250 |
mW |
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Derate above 25°C |
2.94 |
mW/°C |
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TA |
Ambient Operating Temperature Range |
-40 to +100 |
°C |
Tstg |
Storage Temperature Range |
-40 to +150 |
°C |
TL |
Lead Soldering Temperature |
260 |
°C |
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(1/16" from case, 10 sec. duration) |
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Notes:
1.Isolation Surge Voltage, VISO, is an internal device dielectric breakdown rating.
2.For this test, Pins 1 and 2 are common and Pins 5, 6 and 7 are common.
3.VISO rating of 2500 VAC(rms) for t = 1 min. is equivalent to a rating of 3,000 VAC(rms) for t = 1 sec.
Output Transistor Optocouplers Ouline Small — MOC213M MOC212M, MOC211M,
©2005 Fairchild Semiconductor Corporation |
www.fairchildsemi.com |
MOC211M, MOC212M, MOC213M Rev. 1.0.1 |
2 |
Electrical Characteristics (TA = 25°C unless otherwise specified)
Symbol |
Parameter |
Test Conditions |
Min. |
Typ.* |
Max. |
Unit |
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EMITTER |
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VF |
Input Forward Voltage |
IF = 10mA |
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1.15 |
1.5 |
V |
IR |
Reverse Leakage Current |
VR = 6.0V |
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0.001 |
100 |
µA |
CIN |
Input Capacitance |
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18 |
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pF |
DETECTOR |
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ICEO1 |
Collector-Emitter Dark Current |
VCE = 10V, TA = 25°C |
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1.0 |
50 |
nA |
ICEO2 |
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VCE = 10V, TA = 100°C |
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1.0 |
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µA |
BVCEO |
Collector-Emitter Breakdown |
IC = 100µA |
30 |
100 |
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V |
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Voltage |
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BVECO |
Emitter-Collector Breakdown |
IE = 100µA |
7.0 |
10 |
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V |
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Voltage |
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CCE |
Collector-Emitter Capacitance |
f = 1.0MHz, VCE = 0 |
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7.0 |
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pF |
COUPLED |
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CTR |
Collector-Output Current(4) |
IF = 10mA, VCE = 10V |
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MOC211M |
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20 |
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% |
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MOC212M |
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50 |
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MOC213M |
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100 |
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VISO |
Isolation Surge Voltage(1)(2)(3) |
f = 60 Hz AC Peak, t = 1 min. |
2500 |
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Vac(rms) |
RISO |
Isolation Resistance(2) |
V = 500V |
1011 |
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Ω |
VCE (sat) |
Collector-Emitter Saturation Voltage |
IC = 2.0mA, IF = 10mA |
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0.4 |
V |
CISO |
Isolation Capacitance(2) |
V = 0V, f = 1MHz |
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0.2 |
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pF |
ton |
Turn-On Time |
IC = 2.0mA, VCC = 10V, RL = 100Ω |
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7.5 |
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µs |
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(Fig. 10) |
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toff |
Turn-Off Time |
IC = 2.0mA, VCC = 10V, RL = 100Ω |
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5.7 |
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µs |
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(Fig. 10) |
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tr |
Rise Time |
IC = 2.0mA, VCC = 10V, RL = 100Ω |
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3.2 |
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µs |
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(Fig. 10) |
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tf |
Fall Time |
IC = 2.0mA, VCC = 10V, RL = 100Ω |
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4.7 |
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µs |
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(Fig. 10) |
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*Typical values at TA = 25°C
Notes:
1.Isolation Surge Voltage, VISO, is an internal device dielectric breakdown rating.
2.For this test, Pins 1 and 2 are common and Pins 5, 6 and 7 are common.
3.VISO rating of 2500 VAC(rms) for t = 1 min. is equivalent to a rating of 3,000 VAC(rms) for t = 1 sec.
4.Current Transfer Ratio (CTR) = IC/IF x 100%.
Output Transistor Optocouplers Ouline Small — MOC213M MOC212M, MOC211M,
©2005 Fairchild Semiconductor Corporation |
www.fairchildsemi.com |
MOC211M, MOC212M, MOC213M Rev. 1.0.1 |
3 |
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