KA1H0380
www.fairchildsemi.com
KA1L0380B/KA1L0380RB/KA1M0380RB/
KA1H0380RB
Fairchild Power Switch(SPS)
Features
•Precision fixed operating frequency
•KA1L0380B/KA1L0380RB (50KHz)
•KA1M0380RB (67KHz)
•KA1H0380RB (100KHz)
•Pulse by pulse over current limiting
•Over load protection
•Over voltage protection (Min. 23V)
•Internal thermal shutdown function
•Under voltage lockout
•Internal high voltage sense FET
•Auto restart (KA1L0380RB/KA1M0380RB/KA1H0380RB)
Description
The SPS product family is specially designed for an off-line SMPS with minimal external components. The SPS consist of high voltage power SenseFET and current mode PWM controller IC. PWM controller features integrated fixed oscillator, under voltage lock out, leading edge blanking, optimized gate turn-on/turn-off driver, thermal shut down protection, over voltage protection, temperature compensated precision current sources for loop compensation and fault protection circuit. Compared to discrete MOSFET and controller or RCC switching converter solution, a SPS can reduce total component count, design size, weight and at the same time increase & efficiency, productivity, and system reliability. It has a basic platform well suited for cost effective design in either a flyback converter or a forward converter.
TO-220F-4L
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1. GND 2. DRAIN 3. VCC 4. FB
Internal Block Diagram
#3 VCC |
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32V |
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5V |
Internal |
#2 DRAIN |
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Vref |
bias |
SFET |
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Good |
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logic |
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OSC |
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9V |
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S |
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5µ A |
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1mA |
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R Q |
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#4 FB |
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2.5R |
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L.E.B |
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+ |
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1R |
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+ |
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0.1V |
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7.5V |
− |
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S |
#1 GND |
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+ |
Thermal S/D |
R Q |
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25V |
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Power on reset |
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OVER VOLTAGE S/D |
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Rev. .5.0
©2000 Fairchild Semiconductor International
KA1L0380B/KA1L0380RB/KA1M0380RB/KA1H0380RB
Absolute Maximum Ratings
Parameter |
Symbol |
Value |
Unit |
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Drain-source (GND) voltage (1) |
VDSS |
800 |
V |
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Drain-Gate voltage (RGS=1MΩ ) |
VDGR |
800 |
V |
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Gate-source (GND) voltage |
VGS |
± 30 |
V |
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Drain current pulsed (2) |
IDM |
12 |
ADC |
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Single pulsed avalanche energy (3) |
EAS |
95 |
mJ |
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Avalanche current(4) |
IAS |
6 |
A |
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Continuous drain current (TC=25° C) |
ID |
3.0 |
ADC |
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Continuous drain current (TC=100° C) |
ID |
2.1 |
ADC |
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Supply voltage |
VCC |
30 |
V |
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Analog input voltage range |
VFB |
− 0.3 to VSD |
V |
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Total power dissipation |
PD |
35 |
W |
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Derating |
0.28 |
W/° C |
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Operating temperature |
TOPR |
− 25 to +85 |
° C |
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Storage temperature |
TSTG |
− 55 to +150 |
° C |
Notes:
1.Tj=25° C to 150° C
2.Repetitive rating: Pulse width limited by maximum junction temperature
3.L=51mH, VDD=50V, RG=25Ω , starting Tj=25° C
4.L=13µ H, starting Tj=25° C
2
KA1L0380B/KA1L0380RB/KA1M0380RB/KA1H0380RB
Electrical Characteristics (SFET part)
(Ta=25° C unless otherwise specified)
Parameter |
Symbol |
Condition |
Min. |
Typ. |
Max. |
Unit |
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Drain-source breakdown voltage |
BVDSS |
VGS=0V, ID=50µ A |
800 |
- |
- |
V |
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VDS=Max., Rating, |
- |
- |
50 |
µ |
A |
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VGS=0V |
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Zero gate voltage drain current |
IDSS |
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VDS=0.8Max., Rating, |
- |
- |
200 |
µ |
A |
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VGS=0V, TC=125° C |
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Static drain-source on resistance (Note) |
RDS(ON) |
VGS=10V, ID=1.5A |
- |
4.0 |
5.0 |
Ω |
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Forward transconductance (Note) |
gfs |
VDS=15V, ID=1.5A |
1.5 |
2.5 |
- |
S |
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Input capacitance |
Ciss |
VGS=0V, VDS=25V, |
- |
779 |
- |
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Output capacitance |
Coss |
- |
75.6 |
- |
pF |
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f=1MHz |
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Reverse transfer capacitance |
Crss |
- |
24.9 |
- |
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Turn on delay time |
td(on) |
VDD=0.5BVDSS, ID=3.0A |
- |
40 |
- |
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(MOSFET switching |
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Rise time |
tr |
- |
95 |
- |
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time are essentially |
nS |
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Turn off delay time |
td(off) |
- |
150 |
- |
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independent of |
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Fall time |
tf |
operating temperature) |
- |
60 |
- |
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Total gate charge |
Qg |
VGS=10V, ID=3.0A, |
- |
- |
34 |
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(gate-source+gate-drain) |
VDS=0.5BVDSS (MOSFET |
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switching time are |
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nC |
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Gate-source charge |
Qgs |
- |
7.2 |
- |
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essentially independent of |
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Gate-drain (Miller) charge |
Qgd |
- |
12.1 |
- |
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operating temperature) |
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Note:
Pulse test: Pulse width ≤ 300 S, duty cycle ≤ 2%
S1
=---
R
3
KA1L0380B/KA1L0380RB/KA1M0380RB/KA1H0380RB
Electrical Characteristics (CONTROL part)
(Ta=25° C unless otherwise specified)
Parameter |
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Symbol |
Condition |
Min. |
Typ. |
Max. |
Unit |
REFERENCE SECTION |
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Output voltage (1) |
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Vref |
Ta=25° C |
4.80 |
5.00 |
5.20 |
V |
Temperature Stability (1)(2) |
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Vref/∆ T |
− 25° C≤ Ta≤ +85° C |
- |
0.3 |
0.6 |
mV/° C |
OSCILLATOR SECTION |
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KA1L0380B |
45 |
50 |
55 |
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Initial accuracy |
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FOSC |
KA1L0380RB |
45 |
50 |
55 |
kHz |
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KA1M0380RB |
61 |
67 |
73 |
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KA1H0380RB |
90 |
100 |
110 |
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Frequency change with temperature (2) |
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∆ F/∆ T |
− 25° C≤ Ta≤ +85° C |
- |
± 5 |
± 10 |
% |
PWM SECTION |
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KA1L0380B |
74 |
77 |
80 |
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Maximum duty cycle |
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Dmax |
KA1L0380RB |
74 |
77 |
80 |
% |
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KA1M0380RB |
74 |
77 |
80 |
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KA1H0380RB |
64 |
67 |
70 |
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FEEDBACK SECTION |
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Feedback source current |
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IFB |
Ta=25° C, 0V≤ Vfb≤ 3V |
0.7 |
0.9 |
1.1 |
mA |
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Shutdown delay current |
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Idelay |
Ta=25° C, 5V≤ Vfb≤ VSD |
4.0 |
5.0 |
6.0 |
µ A |
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OVER CURRENT PROTECTION SECTION |
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Over current protection |
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IL(max) |
Max. inductor current |
1.89 |
2.15 |
2.41 |
A |
UVLO SECTION |
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Start threshold voltage |
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Vth(H) |
- |
14 |
15 |
16 |
V |
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Minimum operating voltage |
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Vth(L) |
After turn on |
9 |
10 |
11 |
V |
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TOTAL STANDBY CURRENT SECTION |
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Start current |
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IST |
VCC=14V |
0.1 |
0.3 |
0.45 |
mA |
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Operating supply current |
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IOPR |
Ta=25° C |
6 |
12 |
18 |
mA |
(control part only) |
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VCC zener voltage |
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VZ |
ICC=20mA |
30 |
32.5 |
35 |
V |
SHUTDOWN SECTION |
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Shutdown Feedback voltage |
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VSD |
- |
6.9 |
7.5 |
8.1 |
V |
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Thermal shutdown temperature (Tj) (1) |
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TSD |
- |
140 |
160 |
- |
° C |
Over voltage protection voltage |
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VOVP |
- |
23 |
25 |
28 |
V |
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Notes:
1.These parameters, although guaranteed, are not 100% tested in production
2.These parameters, although guaranteed, are tested in EDS (wafer test) process
4
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