Fairchild BCW61A, BCW61A, BCW61B, BCW61B, BCW61C Schematic [ru]

BCW61A/B/C/D

General Purpose Transistor

		3
			2
		1	SOT-23
		1. Base 2. Emitter	3. Collector
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25° C unless otherwise noted
Symbol	Parameter	Value	Units
VCBO	Collector-Base Voltage	-32	V
VCEO	Collector-Emitter Voltage	-32	V
VEBO	Emitter-Base Voltage	-5.0	V
IC	Collector Current	-100	mA
PC	Collector Power Dissipation	350	mW
TSTG	Storage Temperature	-55 ~ 150	° C

• Refer to KST5086 for graphs

BCW61A/B/C/D

©2001 Fairchild Semiconductor Corporation

Rev. A1, June 2001

Electrical Characteristics Ta=25° C unless otherwise noted

Symbol	Parameter	Test Condition	Min.	Max.	Units
BVCEO	Collector-Emitter Breakdown Voltage	IC= -2mA, IB=0	-32
BVEBO	Emitter-Base Breakdown Voltage	IE= -1µ A, IC=0	-5
ICES	Collector Cut-off Current	VCB= -32V, VBE=0		-20
hFE	DC Current Gain	VCE= -5V, IC= -10µ A	20		V
	: BCW61B
	: BCW61C		40
	: BCW61D		100
	: BCW61A	VCE= -5V, IC= -2mA	120	220	V
	: BCW61B		140	310
	: BCW61C		250	460
	: BCW61D	VCE= -5V, IC= -50mA	380	630
	: BCW61A		60		nA
	: BCW61B		80
	: BCW61C		100
	: BCW61D		100
VCE (sat)	Collector-Emitter Saturation Voltage	IC= -50mA, IB= -1.25mA		-0.55	V
		IC= -10mA, IB= -0.25mA		-0.25	V
VBE (sat)	Base-Emitter Saturation Voltage	IC= -50mA, IB= -1.25mA	0.68	1.05	V
		IC= -10mA, IB= -0.25mA	0.6	0.85	V
VBE (on)	Base-Emitter On Voltage	VCE= -5V, IC= -2mA	0.6	0.75	V
Cob	Output Capacitance	VCB= -10V, IE=0		6	pF
		f=1MHz
NF	Noise Figure	IC= -0.2mA, VCE= -5V		6	dB
		RG=20KΩ , f=1KHz
tON	Turn On Time	IC= -10mA, IB1= -1mA		150	ns
tOFF	Turn Off Time	VBB= -3.6V, B22= -1mA		800	ns
		R1=R2=5.0KΩ , RL=990Ω

Marking Code

Type	BCW61A	BCW61B	BCW61C	BCW61D
Mark.	BA	BB	BC	BD

Marking

BA

BCW61A/B/C/D

©2001 Fairchild Semiconductor Corporation				Rev. A1, June 2001