Fairchild BC556, BC557, BC558, BC559, BC560 service manual

BC556/557/558/559/560

Switching and Amplifier

• High Voltage: BC556, VCEO= -65V

•Low Noise: BC559, BC560

•Complement to BC546 ... BC 550

		1		TO-92
PNP Epitaxial Silicon Transistor		1. Collector 2. Base			3. Emitter
Absolute Maximum Ratings Ta=25° C unless otherwise noted
Symbol	Parameter			Value	Units
VCBO	Collector-Base Voltage			-80	V
	: BC556
	: BC557/560			-50	V
	: BC558/559			-30	V
VCEO	Collector-Emitter Voltage			-65	V
	: BC556
	: BC557/560			-45	V
	: BC558/559			-30	V
VEBO	Emitter-Base Voltage			-5	V
IC	Collector Current (DC)			-100	mA
PC	Collector Power Dissipation			500	mW
TJ	Junction Temperature			150	° C
TSTG	Storage Temperature			-65 ~ 150	° C

Electrical Characteristics Ta=25° C unless otherwise noted

Symbol		Parameter	Test Condition	Min.	Typ.	Max.	Units
ICBO	Collector Cut-off Current		VCB= -30V, IE=0			-15	nA
hFE	DC Current Gain		VCE= -5V, IC=2mA	110		800
VCE	Collector-Emitter Saturation Voltage		IC= -10mA, IB= -0.5mA		-90	-300	mV
(sat)			IC= -100mA, IB= -5mA		-250	-650	mV
VBE (sat)	Collector-Base Saturation Voltage		IC= -10mA, IB= -0.5mA		-700		mV
			IC= -100mA, IB= -5mA		-900		mV
VBE (on)	Base-Emitter On Voltage		VCE= -5V, IC= -2mA	-600	-660	-750	mV
			VCE= -5V, IC= -10mA			-800	mV
fT	Current Gain Bandwidth Product		VCE= -5V, IC= -10mA, f=10MHz		150		MHz
Cob	Output Capacitance		VCB= -10V, IE=0, f=1MHz			6	pF
NF	Noise Figure	: BC556/557/558	VCE= -5V, IC= -200µ A		2	10	dB
		: BC559/560	f=1KHz, RG=2KΩ		1	4	dB
		: BC559	VCE= -5V, IC= -200µ A		1.2	4	dB
		: BC560	RG=2KΩ, f=30~15000MHz		1.2	2	dB

hFE Classification

Classification	A	B	C
hFE	110 ~ 220	200 ~ 450	420 ~ 800

BC556/557/558/559/560

©2002 Fairchild Semiconductor Corporation

Rev. A2, August 2002

Typical Characteristics

	-50
CURRENT	-45				IB = -400 A
	-40					IB = -350 A
	-35						IB = -300 A
	-30						IB = -250 A
COLLECTOR
	-25							IB = -200 A
	-20									A
								IB = -150
[mA],	-15							IB = -100 A
	-10
C
I								IB = -50		A
	-5
	-0	-4	-6	-8	-10	-12	-14	-16	-18	-20
	-2

VCE[V], COLLECTOR-EMITTER VOLTAGE

Figure 1. Static Characteristic

VOLTAGE	-10
SATURATION		IC = -10 IB
	-1	VBE(sat)
(sat)[V],	-0.1
CE		VCE(sat)
(sat), V
BE
V	-0.01
		-1	-10	-100
	-0.1

IC[mA], COLLECTOR CURRENT

Figure 3. Base-Emitter Saturation Voltage

Collector-Emitter Saturation Voltage

			f=1MHz
(pF), CAPACITANCE	10		IE = 0
ob
C
	1	-10	-100
	-1

VCB[V], COLLECTOR-BASE VOLTAGE

Figure 5. Collector Output Capacitance

FE	1000			BC556/557/558/559/560
GAINCURRENT		VCE = -5V
	100
DC,	10
h
	1	-1	-10	-100
	-0.1
		IC[mA], COLLECTOR CURRENT

Figure 2. DC current Gain

	-100
COLLECTOR CURRENT	VCE = -5V
	-10
	-1
[mA],
C
I
	-0.1	-0.4	-0.6	-0.8	-1.0	-1.2
	-0.2

VBE[V], BASE-EMITTER VOLTAGE

Figure 4. Base-Emitter On Voltage

PRODUCT	1000
	VCE = -5V
CURRENT GAIN-BANDWIDTH	100
[MHz],	10	-10
	-1
T
f
	IC[mA], COLLECTOR CURRENT

Figure 6. Current Gain Bandwidth Product

©2002 Fairchild Semiconductor Corporation

Rev. A2, August 2002