MBR2535CT-MBR2560CT
25 Ampere Schottky Barrier Rectifiers
• Low power loss, high efficiency. |
|
|
• |
High surge capability. |
|
• For use in low voltage, high frequency inverters, |
|
|
|
free wheeling, and polarity protection applications. |
|
• Metal silicon junction, majority carrier conduction. |
1 2 3 |
|
• |
High current capability, low forward voltage drop. |
|
• |
Guardring for overvoltage protection. |
TO-220AB |
August 2009
PIN1 +
PIN3 CASE
PIN2
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol |
Parameter |
|
Value |
|
Units |
||
2535CT |
2545CT |
|
2550CT |
2560CT |
|||
|
|
|
|
||||
|
|
|
|
|
|
|
|
VRRM |
Maximum Repetitive Reverse Voltage |
35 |
45 |
|
50 |
60 |
V |
IF(AV) |
Average Rectified Forward Current |
|
|
25 |
|
A |
|
.375 " lead length @ TA = 130°C |
|
|
|
||||
|
|
|
|
|
|
|
|
IFSM |
Non-repetitive Peak Forward Surge Current. |
|
200 |
|
A |
||
8.3ms Single Half-Sine-Wave |
|
|
|||||
TSTG |
Storage Temperature Range |
|
-65 to +175 |
|
°C |
||
TJ |
Operating Junction Temperature Range |
|
-65 to +150 |
|
°C |
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics
Symbol |
Parameter |
Value |
Units |
|
|
|
|
PD |
Power Dissipation |
2.0 |
W |
RθJA |
Thermal Resistance, Junction to Ambient |
60 |
°C/W |
RθJL |
Thermal Resistance, Junction to Lead |
1.5 |
°C/W |
Rectifiers Barrier Schottky Ampere 25 — MBR2560CT-MBR2535CT
© 2009 Fairchild Semiconductor Corporation |
www.fairchildsemi.com |
MBR2535CT-MBR2560CT Rev. C1 |
1 |
Electrical Characteritics TA = 25°C unless otherwise specified
Symbol |
Parameter |
|
Value |
Units |
|||
2535CT |
2545CT |
2550CT |
2560CT |
||||
VF |
Forward Voltage |
|
|
0.75 |
|
||
|
IF=12.5A, TC=25°C |
|
|
|
|||
|
IF=12.5A, TC=125°C |
|
|
0.65 |
V |
||
|
IF=25A, TC=25°C |
0.82 |
0.82 |
|
|||
|
IF=25A, TC=125°C |
0.73 |
0.78 |
|
|||
|
Maximum Reverse Current at rated VRRM Per |
|
|
|
|
|
|
IR |
Diode |
0.2 |
0.2 |
mA |
|||
@ TA=25°C |
|||||||
|
15.0 |
10.0 |
|
||||
|
@ TA=125°C |
|
|
|
|
|
|
IRRM |
Peak Repetitive Reverse Surge Current |
1.0 |
0.5 |
A |
|||
|
2.0 μs Pulse Width, f = 1.0 KHz |
|
|
|
|
|
|
Cj |
Typical Junction Capacitance |
600 |
460 |
pF |
Rectifiers Barrier Schottky Ampere 25 — MBR2560CT-MBR2535CT
© 2009 Fairchild Semiconductor Corporation |
www.fairchildsemi.com |
MBR2535CT-MBR2560CT Rev. C1 |
2 |