Sharp LH5116HD-10, LH5116H-10, LH5116H, LH5116, LH5116N-10 Datasheet

LH5116/H

CMOS 16K (2K × 8) Static RAM

FEATURES

∙2,048 × 8 bit organization

∙Access time: 100 ns (MAX.)

∙Power consumption:

Operating: 220 mW (MAX.) Standby: 5.5 μW (MAX.)

∙Single +5 V power supply

∙Fully-static operation

∙TTL compatible I/O

∙Three-state outputs

∙Wide temperature range available LH5116H: -40 to +85°C

∙Packages:

24-pin, 600-mil DIP

24-pin, 300-mil SK-DIP

24-pin, 450-mil SOP

DESCRIPTION

The LH5116/H are static RAMs organized as 2,048 × 8 bits. It is fabricated using silicon-gate CMOS process technology. It features high speed access in read mode using output enable (tOE).

PIN CONNECTIONS

24-PIN DIP															TOP VIEW
24-PIN SK-DIP
24-PIN SOP	A7							1		24		Vcc
	A6					2				23		A8
	A5									22		A9
							3
	A4							4		21		WE
	A3							5		20
												OE
	A2							6		19		A10
	A1							7		18			CE
	A0							8		17		I/O8
	I/O1							9		16		I/O7
	I/O2					10				15		I/O6
	I/O3								11	14		I/O5
	GND								12	13		I/O4

5116-1

Figure 1. Pin Connections for DIP, SK-DIP, and SOP Packages

1

LH5116/H								CMOS 16K (2K × 8) Static RAM
A0	8	ROW ADDRESS		ROW DECODERS
A5	3		BUFFERS					24	VCC
A6	2
					MEMORY CELL
A7	1					ARRAY		12	GND
A8	23					(128 x128)
A9	22
A10	19
I/O1	9			CE
I/O2	10			CONTROL
I/O3	11					COLUMN
I/O4	13					I/O CIRCUIT
I/O5	14
				DATA
I/O6	15				COLUMN DECODERS
I/O7	16
I/O8	17
					COLUMN ADDRESS
						BUFFERS
					CE
CE 18
WE 21
OE	20
					4	5	6	7
					A4	A3	A2	A1
									5116-2

Figure 2. LH5116/H Block Diagram

PIN DESCRIPTION

SIGNAL	PIN NAME	SIGNAL	PIN NAME
A0 - A10	Address input	I/O1 - I/O8	Data input/output
CE	Chip Enable input	VCC	Power supply
OE	Output Enable input	GND	Ground
WE	Write Enable input

TRUTH TABLE

CE		OE		WE		MODE	I/O1 - I/O8	SUPPLY CURRENT	NOTE

L	X	L	Write	DIN	Operating (ICC)	1
L	L	H	Read	DOUT	Operating (ICC)
H	X	X	Deselect	High-Z	Standby (ISB)	1
L	H	X	Outputs disable	High-Z	Operating (ICC)	1

NOTE:

1. X = H or L

2

CMOS 16K (2K × 8) Static RAM	LH5116/H

ABSOLUTE MAXIMUM RATINGS

	PARAMETER	SYMBOL	RATING
	Supply voltage	VCC	-0.3 to +7.0
	Input voltage	VIN	-0.3 to VCC + 0.3
	Operating temperature	Topr	0 to +70
			-40 to +85
	Storage temperature	Tstg	-55 to +150

NOTES:

1.The maximum applicable voltage on any pin with respect to GND.

2.Applied to the LH5116/D/NA

3.Applied to the LH5116H/HD/HN

	UNIT	NOTE
	V	1
	V	1
	°C	2
		3
	°C

RECOMMENDED OPERATING CONDITIONS 1

PARAMETER	SYMBOL	MIN.	TYP.	MAX.	UNIT
Supply voltage	VCC	4.5	5.0	5.5	V
Input voltage	VIH	2.2		VCC + 0.3	V
	VIL	-0.3		0.8	V

NOTE:

1. TA = 0 to 70°C (LH5116/D/NA), TA = -40 to +85°C (LH5116H/HD/HN)

DC CHARACTERISTICS 1 (VCC = 5 V ±10%)

PARAMETER

SYMBOL

	Output ‘LOW’ voltage	V
		OL
	Output ‘HIGH’ voltage	VOH
	Input leakage current	ILI
	Output leakage current	ILO
	Operating current	ICC1
		ICC2
	Standby current	ISB

NOTES:

CONDITIONS	MIN.	TYP.	MAX.	UNIT	NOTE
IOL = 2.1 mA			0.4	V
IOH = -1.0 mA	2.4			V
VIN = 0 V to VCC	-1.0		1.0	mA
CE = VIH, VI/O = 0 V to VCC	-1.0		1.0	mA
Outputs open (OE = VCC)		25	30	mA	2
Outputs open (OE = VIH)		30	40	mA	3
CE ³ VCC - 0.2 V			1.0	mA
All other input pins = 0 V to VCC			0.2		4

1.TA = 0 to 70°C (LH5116/D/NA), TA = -40 to +85°C (LH5116H/HD/HN)

2.CE = 0 V; all other input pins = 0 V to VCC

3.CE = VIL; all other input pins = VIL to VIH

4.TA = 25°C

AC CHARACTERISTICS 1

(1) READ CYCLE (VCC = 5 V ±10%)

PARAMETER	SYMBOL	MIN.	TYP.	MAX.	UNIT	NOTE
Read cycle time	tRC	100			ns
Address access time	tAA			100	ns
Chip enable access time	tACE			100	ns
Chip enable Low to output in Low-Z	tCLZ	10			ns	2
Output enable access time	tOE			40	ns
Output enable Low to output in Low-Z	tOLZ	10			ns	2
Chip disable to output in High-Z	tCHZ	0		40	ns	2
Output disable to output in High-Z	tOHZ	0		40	ns	2
Output hold time	tOH	10			ns

NOTES:

1.TA = 0 to 70°C (LH5116/NA/D). TA = -40 to 85°C (LH5116H/HD/HN).

2.Active output to high-impedance and high-impedance to output active tests specified for a ±200 mV transition from steady state levels into the test load.

3