LH532100BU
Sharp LH532100BU, LH532100BT, LH532100BSR, LH532100BN, LH532100BD Datasheet
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LH532100B
CMOS 2M (256K × 8) MROM
FEATURES
•• 262,144 words × 8 bi t organ izatio n
•• Access time: 150 ns (MAX.)
•• Low-pow er consumptio n:
Operating : 27 5 mW (MAX.)
Standb y: 550 µW (MAX.)
•• Static operation
•• Mask-programmable OE /
OE a nd
OE
1
/OE
1
/DC
•• TTL compatible I/O
•• Three-state outputs
•• Singl e +5 V p owe r su ppl y
•• Packa ges:
32-pi n , 600 -mil DIP
32-pi n , 525 -mil S OP
32-pi n , 450 -mil Q FJ (PLC C)
32-pi n , 8 × 20 mm
2
TSOP (Type I)
32-pin, 400-mil TSOP (Type II)
•• JEDEC stan dard EPROM pinout (DIP)
DESCRIPTION
The LH532100B is a 2M-bit mask-programmable
ROM organized as 262,144 × 8 bits. It is fabricated
using si licon-gate CMOS process technology.
PIN CONNECTIONS
532100B-1
TOP VIEW
1
2
3
4
5
6
9
10
A
2
A
5
V
CC
28
27
26
25
24
23
20
17
A
7
A
6
7
8
A
3
A
4
22
21
A
15
A
12
GND
A
13
A
8
A
11
A
10
CE
D
7
D
6
D
3
11
12
13
32
31
30
29
A
14
A
1
14
15
16
19
D
5
18
D
4
D
1
D
2
A
0
D
0
A
9
A
16
OE/OE
32-PIN DIP
32-PIN SOP
OE
1
/OE
1
/DC
DC
A
17
Figure 1. Pin Connections for DIP and
SOP Packages
21
22
23
24
25
26
27
D
7
CE
A
10
A
9
A
8
13
12
11
10
9
8
D
0
A
0
A
1
A
2
A
5
5
30 31 32 4321
28
29
A
13
A
14
6
A
7
7
DC
17181920 16 15 14
D
6
D
5
D
4
D
3
GND
D
2
D
1
32-PIN QFJ TOP VIEW
532100B-7
OE/OE
A
11
A
3
V
CC
OE
1
/OE
1
/DC
A
16
A
15
A
12
A
17
A
4
A
6
Figure 2. P in Connections QFJ
(PLCC) Package
1
532100B-2
TOP VIEW
2
3
4
5
8
9
V
CC
A
14
29
28
27
26
25
24
21
18
A
8
A
13
6
7
23
22
D
7
A
2
10
11
12
31
30
A
16
13
20
19
OE
1
/OE
1
/DC
32-PIN TSOP (Type I)
14
15
16
17
A
3
32
1
A
9
A
10
D
6
D
4
D
3
GND
D
2
D
5
D
0
A
0
A
1
A
11
A
15
A
12
A
7
A
6
A
5
A
17
DC
OE/OE
CE
A
4
D
1
Figure 3. Pin Connect ions for TSOP
(Type I) P ackage
1
2
3
4
7
8
A
7
30
29
28
27
26
25
22
19
A
15
A
12
5
6
A
6
24
23
A
16
DC
A
14
A
8
A
10
CE
D
5
9
10
11
32
31
12
21
D
7
20
D
6
A
0
D
0
A
2
A
1
A
13
13
14
A
9
532100B-3
TOP VIEW32-PIN TSOP (Type II)
NOTE: Reverse bend available on request.
D
1
D
2
15
16
GND
17
D
3
18
D
4
OE/OE
A
11
OE
1
/OE
1
/DC
A
5
A
4
A
3
A
17
V
CC
Figure 4. Pin Connections for TSOP
(Type II) Packages
LH532100B CMOS 2M MROM
2
NOTE:
1. Active levels of OE/OE and OE
1
/OE
1
/DC are mask-program mable.
Select ing DC a llows the outputs to be act ive f or both high and low levels applied to this pin.
It is recommended to apply either a HIGH or a LOW to t he DC pin.
TRUTH TABLE
CE OE/OE OE
1
/OE
1
MODE D
0
– D
7
SUPPLY CURRENT
H X X Non selected High-Z Standby (I
SB
)
L L/H X Non selected High-Z Operating (I
CC
)
L X L/H Non selected High-Z Operating (I
CC
)
L H/L H/L Selected D
OUT
Operating (I
CC
)
NOTE:
X = H or L
532100B-4
A
3
A
2
A
1
A
12
A
11
A
10
A
9
A
8
32
4
25
23
26
6
9
10
11
A
7
A
6
V
CC
A
4
18 19 2013 21
D
0
MEMORY
MATRIX
(262,144 x 8)
SENSE AMPLIFIER
OUTPUT BUFFER
16
5
GND D
1
D
2
D
3
D
4
D
5
D
6
D
7
1714 15
8
27
A
5
7
A
13
28
ADDRESS BUFFER
CE/CE
A
0
12
ADDRESS DECODER
COLUMN SELECTOR
CE
BUFFER
OE
BUFFER
A
14
29
A
15
3
22
TIMING
GENERATOR
A
16
2
OE
1
/OE
1
/DC
A
17
30
24
OE/OE
NOTE: Pin numbers apply to the 32-pin DIP, SOP, QFJ, or TSOP (Type II).
1
Figure 5. LH532100B Block Diagram
PIN DESCRIPTI ON
SIGNAL PIN NAME NOTE
A
0
– A
17
Addr ess in put
D
0
– D
7
Data ou tput
CE Chip En abl e i npu t
OE/
OE Outp ut E nab le inp ut 1
SIGNAL PIN NAME NOTE
OE
1
/OE
1
/DC
Outpu t E nab le inp ut/
Don’t Ca re c on nec tio n
1
V
CC
Power su ppl y ( +5 V)
GND Groun d
CMOS 2M MROM LH532100B
3
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