Philips HEF40106BDB, HEF40106BD, HEF40106BU, HEF40106BT, HEF40106BPB Datasheet

INTEGRATED CIRCUITS

DATA SHEET

For a complete data sheet, please also download:

∙The IC04 LOCMOS HE4000B Logic Family Specifications HEF, HEC

∙The IC04 LOCMOS HE4000B Logic Package Outlines/Information HEF, HEC

HEF40106B gates

Hex inverting Schmitt trigger

Product specification			January 1995
File under Integrated Circuits, IC04

Philips Semiconductors	Product specification

Hex inverting Schmitt trigger

HEF40106B gates

DESCRIPTION

Each circuit of the HEF40106B functions as an inverter with Schmitt-trigger action. The Schmitt-trigger switches at different points for the positive and negative-going input signals. The difference between the positive-going voltage (VP) and the negative-going voltage (VN) is defined as hysteresis voltage (VH).

This device may be used for enhanced noise immunity or to “square up” slowly changing waveforms.

Fig.2 Pinning diagram.

HEF40106BP(N): 14-lead DIL; plastic (SOT27-1)

HEF40106BD(F): 14-lead DIL; ceramic (cerdip) (SOT73)

HEF40106BT(D): 14-lead SO; plastic (SOT108-1)

( ): Package Designator North America

Fig.1 Functional diagram.

Fig.3 Logic diagram (one inverter).

FAMILY DATA, IDD LIMITS category GATES

See Family Specifications

January 1995

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Philips Semiconductors Product specification

Hex inverting Schmitt trigger					HEF40106B
						gates
DC CHARACTERISTICS
VSS = 0 V; Tamb = 25 °C
	VDD	SYMBOL	MIN.	TYP.	MAX.
	V
Hysteresis	5		0,5	0,8		V
voltage	10	VH	0,7	1,3		V
	15		0,9	1,8		V
Switching levels	5		2	3,0	3,5	V
positive-going	10	VP	3,7	5,8	7	V
input voltage	15		4,9	8,3	11	V
negative-going	5		1,5	2,2	3	V
input voltage	10	VN	3	4,5	6,3	V
	15		4	6,5	10,1	V

		Fig.5	Waveforms showing definition of
Fig.4 Transfer characteristic.			VP, VN and VH, where VN and VP are
			between limits of 30% and 70%.

January 1995

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