Mitsubishi Electric Corporation Semiconductor Group FU-68SDF-V810M209B, FU-68SDF-V810M208B, FU-68SDF-V810M207B, FU-68SDF-V810M206B, FU-68SDF-V810M205B Datasheet

MITSUBISHI (OPTICAL DEVICES)

TENTATIVE FU-68SDF-V810MxxxB

1.58 μm (L-Band) DFB-LD MODULE WITH SINGLEMODE FIBER PIGTAIL (WAVELENGTH SELECTED, BIAS CIRCUIT INTEGRATED, DIGITAL APPLICATION)

DESCRIPTION

Module type FU-68SDF-V810MxxB is a 1.58μm (L-Band) DFB-LD module with single-mode optical fiber.

This module is suitable to a directly modulated light source for use in 2.5Gb/s digital optical communication systems.

This module is prepared to expand the wavelength channels into L-Band for Dense-WDM transmission.

FEATURES

• Multi quantum wells (MQW) DFB Laser Diode module

•Input impedance is 25Ω

•Emission wavelength is in 1.58μm band

•High-speed response

•Built-in optical isolator

•Built-in thermal electric cooler

•Butterfly package

•With photodiode for optical output monitor

APPLICATION

High speed transmission systems (~2.5Gb/s)

Dense-WDM systems

OPTION

•Wavelength option: 1565nm~1625nm are available

ABSOLUTE MAXIMUM RATINGS (Tld=Tset)

Parameter		Symbol	Conditions	Rating	Unit
Laser diode	Optical output	Pf	CW	15	mW
	power
	Forward current	If	CW	150	mA
	Reverse voltage	Vrl	-	2	V
Photodiode	Reverse voltage	Vrd	-	20	V
	Forward current	Ifd	-	2	mA
Thermo-	Cooler current	Ipe	-	1.3	A
electric cooler	Cooler voltage	Vpe	-	3.1	V
(Note)
Operating case temperature		Tc	-	-20 ~ 70	°C
Storage temperature		Tstg	-	-40 ~ 85	°C

Note) Even if the thermo-electric cooler (TEC) is operated within the rated conditions, uncontrolled current loading or operation without heatsink may easily damage the module by exceeding the storage temperature range. Thermistor resistance should be properly monitored by the feedback circuit during TEC operation to avoid the catastrophic damage.

MITSUBISHI (OPTICAL DEVICES)

TENTATIVE FU-68SDF-V810MxxxB

1.58 μm (L-Band) DFB-LD MODULE WITH SINGLEMODE FIBER PIGTAIL (WAVELENGTH SELECTED, BIAS CIRCUIT INTEGRATED, DIGITAL APPLICATION)

ELECTRICAL/OPTICAL CHARACTERISTICS (Tld=Tset, Tc=25°C unless otherwise noted)

Parameter	Symbol	Test Conditions		Limits		Unit
			Min.	Typ.	Max.
Threshold current	Ith	CW	-	10	25	mA
Optical output power	Pth	CW, If=Ith	-	-	150	μW
at threshold current
Operating current	Iop	CW, Pf=10mW	-	50	95	mA
Operating voltage	Vop	CW, Pf=10mW	-	1.3	1.8	V
Input impedance	Zin	Pf=10mW	-	25	-	Ω
Light-emission central	λc	(Note 1)		(Note 2)		nm
wavelength
Central wavelength drift with	Δλc/ Tc	Tc=-20~70°C	-1	-	0	pm/°C
case temp.
Laser operating temperature	Tset	-	20	-	35	°C
Spectral width	Δλ	(Note 1), -20dB	-	0.2	0.4	nm
Side mode suppression ratio	Sr	(Note 1)	33	40	-	dB
Dispersion penalty	Pp	(Note 1), at 10-10 BER,	-	-	2	dB
		+1800ps/nm
Cutoff frequency	fc	Pf=10mW	3.5	-	-	GHz
(-1.5dB optical)
Rise and fall time	tr, tf	(Note 1)	-	-	150	psec
(10~90%)
Relative intensity noise	Nr	CW, Pf=10mW,	-	-155	-145	dB/Hz
		0.5~3GHz
Tracking error	Er	Tc=-20~70°C,	-	-	0.5	dB
(Note 3)		APC, ATC
Differential efficiency	η	CW, Pf=10mW	0.15	0.25	0.35	mW/
						mA
Linearity	Δη	CW, Pf=1~12mW,	-20	-	20	%
		(Note 4)
Monitor current	Imon	CW, Pf=10mW, Vrd=5V	0.2	-	3	mA
Optical isolation	Iso	Tc=25°C	35	-	-	dB
		Tc=-20~70°C	23	-	-
Dark current (PD)	Id	Vrd=5V, Tc=-20~70°C	-	-	0.1	μA
Capacitance (PD)	Ct	Vrd=5V, f=1MHz	-	-	10	pF

Note 1) 2.48832Gb/s NRZ, 223-1, Pf_ave=5mW, Extinction ratio 10dB, optical return loss of the connectors should be greater than 40dB in order to ensure the specified performance.

Note 2) See Table 1.

Note 3) Er=max|10×log(Pf / Pf@25°C)|

Note 4) Variation of the differential efficiency from the straight line between 1mW and 10mW.