Philips PMBZ5226B, PMBZ5227B, PMBZ5242B, PMBZ5243B, PMBZ5244B Datasheet
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DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
PMBZ5226B to PMBZ5257B
Voltage regulator diodes
Product specification |
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1999 May 17 |
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Supersedes data of 1996 Apr 26 |
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Philips Semiconductors |
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Product specification |
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Voltage regulator diodes |
PMBZ5226B to PMBZ5257B |
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FEATURES |
PINNING |
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∙ Total power dissipation: |
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PIN |
DESCRIPTION |
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max. 250 mW |
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1 |
anode |
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∙ Tolerance series: ±5% |
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2 |
not connected |
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∙ Working voltage range: |
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3 |
cathode |
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nom. 3.3 to 75 V |
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∙Non-repetitive peak reverse power dissipation: max. 40 W.
APPLICATIONS
∙ General regulation functions.
DESCRIPTION
Low-power voltage regulator diodes in small SOT23 plastic SMD packages.
The series consists of 32 types with nominal working voltages from
3.3 to 75 V.
MARKING
handbook, halfpage |
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2 |
2
n.c. 1
3
3
Top view |
MAM243 |
Fig.1 Simplified outline (SOT23) and symbol.
TYPE |
MARKING |
TYPE |
MARKING |
TYPE |
MARKING |
TYPE |
MARKING |
NUMBER |
CODE(1) |
NUMBER |
CODE(1) |
NUMBER |
CODE(1) |
NUMBER |
CODE |
PMBZ5226B |
8A |
PMBZ5234B |
8J |
PMBZ5242B |
8S |
PMBZ5250B |
81A |
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PMBZ5227B |
8B |
PMBZ5235B |
8K |
PMBZ5243B |
8T |
PMBZ5251B |
81B |
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PMBZ5228B |
8C |
PMBZ5236B |
8L |
PMBZ5244B |
8U |
PMBZ5252B |
81C |
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PMBZ5229B |
8D |
PMBZ5237B |
8M |
PMBZ5245B |
8V |
PMBZ5253B |
81D |
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PMBZ5230B |
8E |
PMBZ5238B |
8N |
PMBZ5246B |
8W |
PMBZ5254B |
81E |
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PMBZ5231B |
8F |
PMBZ5239B |
8P |
PMBZ5247B |
8X |
PMBZ5255B |
81F |
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PMBZ5232B |
8G |
PMBZ5240B |
8Q |
PMBZ5248B |
8Y |
PMBZ5256B |
81G |
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PMBZ5233B |
8H |
PMBZ5241B |
8R |
PMBZ5249B |
8Z |
PMBZ5257B |
81H |
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Note
1.= p : Made in Hong Kong.= t : Made in Malaysia.
1999 May 17 |
2 |
Philips Semiconductors |
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Product specification |
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Voltage regulator diodes |
PMBZ5226B to PMBZ5257B |
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LIMITING VALUES |
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In accordance with the Absolute Maximum Rating System (IEC 134). |
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SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
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MAX. |
UNIT |
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IF |
continuous forward current |
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− |
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200 |
mA |
IZSM |
non-repetitive peak reverse current |
tp = 100 μs; square wave; |
see Table |
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Tj = 25 °C prior to surge |
“Per type” |
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Ptot |
total power dissipation |
Tamb = 25 °C; note 1 |
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300 |
mW |
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Tamb = 25 °C; note 2 |
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250 |
mW |
PZSM |
non-repetitive peak reverse power |
tp = 100 μs; square wave; |
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40 |
W |
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dissipation |
Tj = 25 °C prior to surge; see Fig.2 |
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Tstg |
storage temperature |
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−65 |
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+150 |
°C |
Tj |
junction temperature |
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150 |
°C |
Notes
1.Device mounted on a ceramic substrate of 8 × 10 × 0.7 mm.
2.Device mounted on an FR4 printed circuit-board.
ELECTRICAL CHARACTERISTICS
Total series
Tj = 25 °C unless otherwise specified.
SYMBOL |
PARAMETER |
CONDITIONS |
MAX. |
UNIT |
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VF |
forward voltage |
IF = 200 mA; see Fig.3 |
1.1 |
V |
1999 May 17 |
3 |
17 May 1999
4
Per type
Tj = 25 °C unless otherwise specified.
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WORKING |
DIFFERENTIAL |
TEMP. COEFF. |
TEST |
DIODE CAP. |
REVERSE CURRENT at |
NON-REPETITIVE PEAK |
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VOLTAGE |
RESISTANCE |
SZ (%/K) |
CURRENT |
Cd (pF) |
REVERSE VOLTAGE |
REVERSE CURRENT |
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TYPE No. |
VZ (V)(1) |
rdif (Ω) |
at IZ(2) |
IZtest (mA) |
at f = 1 MHz; |
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IZSM (A) at tp = 100 μs; |
IR (μA) |
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at IZtest |
at IZ = 0.25 mA |
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at VR = 0 V |
VR |
Tamb = 25 °C |
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(V) |
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NOM. |
MAX. |
TYP. |
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MAX. |
MAX. |
MAX. |
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PMBZ5226B |
3.3 |
1600 |
−0.064 |
20 |
450 |
25 |
1.0 |
6.0 |
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PMBZ5227B |
3.6 |
1700 |
−0.065 |
20 |
450 |
15 |
1.0 |
6.0 |
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PMBZ5228B |
3.9 |
1900 |
−0.063 |
20 |
450 |
10 |
1.0 |
6.0 |
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PMBZ5229B |
4.3 |
2000 |
−0.058 |
20 |
450 |
5 |
1.0 |
6.0 |
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PMBZ5230B |
4.7 |
2000 |
−0.047 |
20 |
450 |
5 |
1.0 |
6.0 |
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PMBZ5231B |
5.1 |
2000 |
−0.013 |
20 |
300 |
5 |
2.0 |
6.0 |
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PMBZ5232B |
5.6 |
1600 |
+0.023 |
20 |
300 |
5 |
3.0 |
6.0 |
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PMBZ5233B |
6.0 |
1600 |
+0.023 |
20 |
300 |
5 |
3.5 |
6.0 |
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PMBZ5234B |
6.2 |
1000 |
+0.039 |
20 |
200 |
5 |
4.0 |
6.0 |
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PMBZ5235B |
6.8 |
750 |
+0.040 |
20 |
200 |
3 |
5.0 |
6.0 |
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PMBZ5236B |
7.5 |
500 |
+0.047 |
20 |
150 |
3 |
6.0 |
4.0 |
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PMBZ5237B |
8.2 |
500 |
+0.052 |
20 |
150 |
3 |
6.5 |
4.0 |
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PMBZ5238B |
8.7 |
600 |
+0.053 |
20 |
150 |
3 |
6.5 |
3.5 |
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PMBZ5239B |
9.1 |
600 |
+0.055 |
20 |
150 |
3 |
7.0 |
3.0 |
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PMBZ5240B |
10 |
600 |
+0.055 |
20 |
90 |
3 |
8.0 |
3.0 |
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PMBZ5241B |
11 |
600 |
+0.058 |
20 |
85 |
2 |
8.4 |
2.5 |
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PMBZ5242B |
12 |
600 |
+0.062 |
20 |
85 |
1 |
9.1 |
2.5 |
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PMBZ5243B |
13 |
600 |
+0.065 |
9.5 |
80 |
0.5 |
9.9 |
2.5 |
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PMBZ5244B |
14 |
600 |
+0.067 |
9.0 |
80 |
0.1 |
10 |
2.0 |
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PMBZ5245B |
15 |
600 |
+0.073 |
8.5 |
75 |
0.1 |
11 |
2.0 |
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PMBZ5246B |
16 |
600 |
+0.073 |
7.8 |
75 |
0.1 |
12 |
1.5 |
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PMBZ5247B |
17 |
600 |
+0.073 |
7.4 |
75 |
0.1 |
13 |
1.5 |
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PMBZ5248B |
18 |
600 |
+0.078 |
7.0 |
70 |
0.1 |
14 |
1.5 |
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PMBZ5249B |
19 |
600 |
+0.078 |
6.6 |
70 |
0.1 |
14 |
1.5 |
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PMBZ5250B |
20 |
600 |
+0.080 |
6.2 |
60 |
0.1 |
15 |
1.5 |
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PMBZ5251B |
22 |
600 |
+0.080 |
5.6 |
60 |
0.1 |
17 |
1.25 |
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diodes regulator Voltage
PMBZ5257B to PMBZ5226B
Semiconductors Philips
specification Product
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