Philips PMBT2222, PMBT2222A Datasheet

DISCRETE SEMICONDUCTORS

DATA SHEET

book, halfpage

M3D088

PMBT2222; PMBT2222A

NPN switching transistors

Product specification			1999 Apr 27
Supersedes data of 1997 Sep 09

Philips Semiconductors	Product specification
NPN switching transistors	PMBT2222; PMBT2222A

FEATURES

∙High current (max. 600 mA)

∙Low voltage (max. 40 V).

APPLICATIONS

∙ Switching and linear amplification.

DESCRIPTION

NPN switching transistor in a SOT23 plastic package. PNP complements: PMBT2907 and PMBT2907A.

MARKING

TYPE NUMBER	MARKING CODE(1)
PMBT2222	1B
PMBT2222A	1P

Note

1.= p : Made in Hong Kong.= t : Made in Malaysia.

PINNING

PIN	DESCRIPTION
1	base
2	emitter
3	collector

handbook, halfpage				3
				3
			1
						2
		1				2
Top view						MAM255

Fig.1 Simplified outline (SOT23) and symbol.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
VCBO	collector-base voltage	open emitter
	PMBT2222		−	60	V
	PMBT2222A		−	75	V
VCEO	collector-emitter voltage	open base
	PMBT2222		−	30	V
	PMBT2222A		−	40	V
VEBO	emitter-base voltage	open collector
	PMBT2222		−	5	V
	PMBT2222A		−	6	V
IC	collector current (DC)		−	600	mA
ICM	peak collector current		−	800	mA
IBM	peak base current		−	200	mA
Ptot	total power dissipation	Tamb ≤ 25 °C; note 1	−	250	mW
Tstg	storage temperature		−65	+150	°C
Tj	junction temperature		−	150	°C
Tamb	operating ambient temperature		−65	+150	°C

Note

1. Transistor mounted on an FR4 printed-circuit board.

1999 Apr 27

2

Philips Semiconductors			Product specification
NPN switching transistors		PMBT2222; PMBT2222A
THERMAL CHARACTERISTICS
SYMBOL	PARAMETER	CONDITIONS	VALUE	UNIT
Rth j-a	thermal resistance from junction to ambient	note 1	500	K/W

Note

1. Transistor mounted on an FR4 printed-circuit board.

CHARACTERISTICS

Tj = 25 °C unless otherwise specified.

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
ICBO	collector cut-off current
	PMBT2222	IE = 0; VCB = 50 V	−	10	nA
		IE = 0; VCB = 50 V; Tj = 125 °C	−	10	μA
	collector cut-off current
	PMBT2222A	IE = 0; VCB = 60 V	−	10	nA
		IE = 0; VCB = 60 V; Tj = 125 °C	−	10	μA
IEBO	emitter cut-off current	IC = 0; VEB = 5 V
	PMBT2222A		−	10	nA
hFE	DC current gain	IC = 0.1 mA; VCE = 10 V	35	−
		IC = 1 mA; VCE = 10 V	50	−
		IC = 10 mA; VCE = 10 V	75	−
		IC = 10 mA; VCE = 10 V; Tamb = −55 °C	35	−
		IC = 150 mA; VCE = 10 V	100	300
		IC = 150 mA; VCE = 1 V	50	−
	DC current gain	IC = 500 mA; VCE = 10 V
	PMBT2222		30	−
	PMBT2222A		40	−
VCEsat	collector-emitter saturation voltage	IC = 150 mA; IB = 15 mA; note 1
	PMBT2222		−	400	mV
	PMBT2222A		−	300	mV
	collector-emitter saturation voltage	IC = 500 mA; IB = 50 mA; note 1
	PMBT2222		−	1.6	V
	PMBT2222A		−	1	V
VBEsat	base-emitter saturation voltage	IC = 150 mA; IB = 15 mA; note 1
	PMBT2222		−	1.3	V
	PMBT2222A		0.6	1.2	V
	base-emitter saturation voltage	IC = 500 mA; IB = 50 mA; note 1
	PMBT2222		−	2.6	V
	PMBT2222A		−	2	V
Cc	collector capacitance	IE = ie = 0; VCB = 10 V; f = 1 MHz	−	8	pF

1999 Apr 27

3