Philips BC869-25, BC869-16, BC869 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D109
BC869
PNP medium power transistor
Product specification
Supersedes data of 1998 Jul 16
1999 Apr 08
Philips Semiconductors Product specification
PNP medium power transistor BC869
FEATURES
• High current (max. 1 A)
PINNING
PIN DESCRIPTION
• Low voltage (max. 20 V).
APPLICATIONS
• Low voltage, high current LF applications.
DESCRIPTION
handbook, halfpage
PNP medium power transistor in a SOT89 plastic
package. NPN complement: BC868.
MARKING
TYPE NUMBER MARKING CODE
BC869 CEC
BC869-16 CGC
BC869-25 CHC
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
1 emitter
2 collector
3 base
2
3
1
123
Bottom view
MAM297
Fig.1 Simplified outline (SOT89) and symbol.
SYMBOL P ARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter −−32 V
collector-emitter voltage open base −−20 V
emitter-base voltage open collector −−5V
collector current (DC) −−1A
peak collector current −−2A
peak base current −−200 mA
total power dissipation T
≤ 25 °C; note 1 − 1.35 W
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Note
1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 6 cm
For other mounting conditions, see
“Thermal considerations for SOT89 in the General Part of associated Handbook”.
2
.
1999 Apr 08 2
Philips Semiconductors Product specification
PNP medium power transistor BC869
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
R
th j-s
Note
1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 6 cm2.
For other mounting conditions, see
CHARACTERISTICS
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
V
BE
f
T
thermal resistance from junction to ambient note 1 93 K/W
thermal resistance from junction to soldering point 13 K/W
“Thermal considerations for SOT89 in the General Part of associated Handbook”.
collector cut-off current IE= 0; VCB= −25 V −−−100 nA
I
= 0; VCB= −25 V; Tj= 150 °C −−−10 µA
E
emitter cut-off current IC= 0; VEB= −5V −−−100 nA
DC current gain IC= −5 mA; VCE= −10 V; see Fig.2 50 −−
=−500 mA; VCE= −1 V; see Fig.2 100 − 375
I
C
I
= −1 A; VCE= −1 V; see Fig.2 60 −−
C
DC current gain I
= −500 mA; VCE= −1 V; see Fig.2
C
BC869-16 100 − 250
BC869-25 160 − 375
collector-emitter saturation
IC= −1 A; IB= −100 mA −−−500 mV
voltage
base-emitter voltage IC= −5 mA; VCE= −10 V −−620 − mV
I
= −1 A; VCE= −1V −−−1V
C
transition frequency IC= −10 mA; VCE= −5 V; f = 100 MHz 40 −−MHz
1999 Apr 08 3
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