HP MSA-3186, MSA-3186-TR1, MSA-3135, MSA-3111, MSA-3185 Datasheet

Silicon Bipolar RFIC Amplifiers

Technical Data

Features

MSA-3111

•Surface Mount SOT-143 Package

•3 dB Bandwidth: DC to

0.5GHz

•18.4 dB Gain at 1 GHz

•3.5 dB NF at 1 GHz

MSA-3135

•Hermetic Ceramic Package

•3 dB Bandwidth: DC to

0.6GHz

•19.6 dB Gain at 1 GHz

•3.2 dB NF at 1 GHz

MSA-3185

•Plastic Microstrip Package

•3 dB Bandwidth: DC to

0.5GHz

•18.7 dB Gain at 1 GHz

•3.5 dB NF at 1 GHz

MSA-3186

•Surface Mount Plastic Microstrip Package

•3 dB Bandwidth: DC to

0.5GHz

•18.7 dB Gain at 1 GHz

•3.5 dB NF at 1 GHz

MSA-3111

MSA-3135

MSA-3185

MSA-3186

MSA-31XX Series

Description

The MSA-31XX series are high performance silicon bipolar RFIC amplifiers designed to be cascadable in 50 Ω systems. The stability factor of K > 1 contributes to easy cascading in numerous narrow and broadband IF and RF commercial and industrial applications.

The MODAMP MSA series is fabricated using a 10 GHz fT,

25 GHz FMAX, silicon bipolar RFIC process which utilizes nitride selfalignment, ion implantation, and gold metallization to achieve excellent uniformity, performance, and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility.

Package options include, the industry standard plastic surface mount SOT-143 package, the 100Ê mil surface mountable hermetic ceramic package, the 85Ê mil plastic microstripline package, and the 85 mil surface mountable plastic microstripline package.

5965-9664E

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Absolute Maximum Ratings[1]

	MSA-	MSA-	MSA-
Parameter	3111	3135	3185, -3186
Device Current	50 mA	60 mA	60 mA
Power Dissipation[2,3]	250mW[3a]	325mW[3b]	325mW[3c]
RF Input Power	+13dBm	+13dBm	+13dBm
Junction Temperature	150°C	200°C	150°C
Storage Temperature	-65 to 150°C	-65 to 200°C	-65 to 150°C
Thermal
Resistance: θjc	500°C/W	155°C/W	115°C/W

Notes:

1. Permanent damage may occur if any of these limits are exceeded.

2. TCASE = 25°C.

3a. Derate at 2.0 mW/°C for TC > 25°C. b. Derate at 6.5 mW/°C for TC > 149°C. c. Derate at 8.7 mW/°C for TC > 112°C.

Typical Biasing

Configuration

Rbias

VCC 7 V

4

RF CHOKE

INPUT

DC BLOCK

3

OUTPUT

MSA

1

Vd = 4.5 V

2

Rbias = VCC – Vd

Id

Electrical Specifications, TA = 25°C

ID = 29 mA, Zo = 50 Ω

	Parameters and		MSA-3111			MSA-3135			MSA-3185, -3186
Symbol	Test Conditions	Units	Min.	Typ.	Max.	Min.	Typ.	Max.	Min.	Typ.	Max.
GP	Power Gain
	(|S |2)
	21	dB	23.5	24.4		23.5	24.5	26.5	23.5	24.6
	f=0.1 GHz
	f=0.5 GHz			22.4			22.8			22.3
	f=1.0 GHz			18.4			19.6			18.7
GP	Gain Flatness			± 0.5			± 0.4	± 1.0		± 0.5
	f = 0.1 to 0.3 GHz	dB
f3dB	3 dB Bandwidth	GHz		0.5			0.6			0.5
VSWR	Input VSWR
	f = 0.1 to 3.0 GHz			1.2:1			1.2:1			1.2:1
	Output VSWR
	f = 0.1 to 3.0 GHz			1.2:1			1.2:1			1.4:1
P1dB	Power Output @
	1 dB Gain
	Compression:
	f=1.0 GHz	dBm		9.0			9.3			9.0
NF	50 Ω Noise
	Figure
	f=1.0 GHz	dB		3.5			3.2			3.5
IP3	Third Order
	Intercept
	Point
	f=1.0 GHz	dBm		23			22			21
td	Group Delay	psec		130			130			130
	f=1.0 GHz
VD	Device Voltage
	TC = 25°C	V	4.0	4.5	6.0	4.5	4.7	5.5	4.0	4.7	6.0
dV/dT	Device Voltage	mV/°C
	Temperature Coefficient			-9.6			-9.6			-9.6

Note: 1. Refer to “Tape and Reel Packaging for Surface Mount Devices.”

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Typical Performance for MSA-3111

	30					30
						28
	25					26		0.1 GHz
						24		0.5 GHz
		-55°C
	20					22
(dB)Gp		-25°C			Gp(dB)
		25°C				20		1.0 GHz
		85°C
	15					18
						16
	10					14		2.0 GHz
						12
	5	0.1	1.0	4.0		10	25	30		40
						20			35
			FREQUENCY (GHz)					I D(mA)
Figure 1. Power Gain vs. Frequency at					Figure 2. Power Gain vs. Current at
Four Temperatures, ID = 29 mA.					25°C.

	14
	40 mA
	12
	35 mA
	10
(dBm)	30 mA
	8
1dB	25 mA
	6
P
	4
	20 mA
	2
	0
	0.1	1.0	4.0

FREQUENCY (GHz)

Figure 3. Typical P1dB vs. Frequency at 25°C.

	5
(dB)			40 mA
FIGURENOISE			20 mA
	4
	3
	0.1	1.0	4.0

FREQUENCY (GHz)

Figure 4. Noise Figure vs. Frequency at ID = 29 mA.

	19															40
(dB)						GP															-55°C
GAIN	18													(dB)							-25°C
																30						25°C
	17												6	FIGURE								85°C
	16												5		D
															mA	20
													4	NOISE
(dBm)															I
	10												3
						NF
1dB																10
P	9
						P1dB										0
	8
	-25		25									85				0	1		2	3					4	5	6
			AMBIENT TEMPERATURE (°C)																	VD (VOLTS)
Figure 5. Power Gain, Noise Figure,															Figure 6. ID vs. VD at Four
and P1dB vs. Temperature at 1 GHz and															Temperatures.

ID = 29 mA.

Typical Scattering Parameters at TA = 25°C, for MSA-3111

ID = 29 mA, Zo = 50 Ω

Frequency	S11				S21			S12			S22
(GHz)	Mag.		Ang.	(dB)	Mag.	Ang.	(dB)	Mag.	Ang.	Mag.		Ang.
0.1	0.05		3	24.4	16.53	167	-27.0	0.045	9	0.10		-23
0.2	0.06		4	24.0	15.83	156	-26.5	0.047	16	0.10		-41
0.3	0.07		-4	23.4	14.78	146	-26.0	0.050	23	0.10		-59
0.4	0.07		-8	22.7	13.59	136	-25.3	0.054	28	0.11		-72
0.5	0.07		-12	22.0	12.53	128	-24.6	0.059	33	0.11		-84
0.6	0.07		-18	21.1	11.41	121	-23.9	0.064	36	0.11		-94
0.7	0.07		-22	20.4	10.47	114	-23.1	0.070	39	0.11		-100
0.8	0.08		-26	19.7	9.63	109	-22.4	0.076	41	0.11		-106
0.9	0.08		-32	19.0	8.89	104	-21.7	0.082	42	0.11		-111
1.0	0.08		-35	18.4	8.27	99	-21.1	0.088	43	0.11		-114
1.5	0.08		-59	15.6	5.99	80	-18.5	0.118	44	0.11		-123
2.0	0.10		-79	13.4	4.69	65	-16.6	0.148	42	0.10		-122
2.5	0.10		-104	11.8	3.88	52	-15.2	0.175	38	0.11		-118
3.0	0.10		-129	10.4	3.31	39	-14.1	0.198	33	0.12		-114
3.5	0.12		-163	9.3	2.91	27	-13.2	0.219	28	0.12		-117
4.0	0.15		164	8.2	2.58	16	-12.6	0.236	23	0.13		-125
4.5	0.21		140	7.4	2.34	4	-12.1	0.250	18	0.13		-136
5.0	0.29		121	6.5	2.10	-7	-11.7	0.260	14	0.14		-148
5.5	0.36		109	5.6	1.90	-18	-11.3	0.271	10	0.17		-158
6.0	0.42		98	4.6	1.70	-28	-11.0	0.282	7	0.21		-165

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