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Cascadable Silicon Bipolar
MMICÊ Amplifier
Technical Data
Features
•Cascadable 50 Ω Gain Block
•3 dB Bandwidth:
DC to 2.4 GHz
•12.0 dB Typical Gain at 1.0Ê GHz
•10.0 dBm Typical P1 dB at 1.0Ê GHz
•Unconditionally Stable (k>1)
•Surface Mount Plastic Package
•Tape-and-Reel Packaging Option Available[1]
Note:
1.Refer to PACKAGING section “Tape- and-Reel Packaging for Surface Mount Semiconductors”.
MSA-0386
Description |
86 Plastic Package |
The MSA-0386 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a low cost, surface mount plastic package. This MMIC is designed for use as a general purpose 50 Ω gain block. Typical applications include narrow and broad band IF and RF amplifiers in commercial and industrial applications.
The MSA-series is fabricated using HP’s 10 GHz fT, 25Ê GHz MAXf , silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility.
Typical Biasing Configuration
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R bias |
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VCC > 7 V |
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RFC (Optional) |
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C block |
4 |
C block |
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3 |
IN |
1 |
MSA |
OUT |
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Vd = 5 V |
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2 |
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5965-9571E |
6-314 |
MSA-0386 Absolute Maximum Ratings
Parameter |
Absolute Maximum[1] |
Device Current |
70 mA |
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Power Dissipation[2,3] |
400mW |
RF Input Power |
+13dBm |
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Junction Temperature |
150°C |
Storage Temperature |
–65 to 150°C |
Electrical Specifications[1], TA = 25°C
Thermal Resistance[2,4]:
θjc = 115°C/W
Notes:
1.Permanent damage may occur if any of these limits are exceeded.
2.TCASE = 25°C.
3.Derate at 9.5 mW/°C for TC > 116°C.
4.See MEASUREMENTS section “Thermal Resistance” for more information.
Symbol |
Parameters and Test Conditions: Id = 35 mA, ZO = 50 Ω |
Units |
Min. |
Typ. |
Max. |
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GP |
PowerGain(|S21|2) |
f = 0.1 GHz |
dB |
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12.5 |
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f = 1.0 GHz |
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10.0 |
12.0 |
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GP |
Gain Flatness |
f = 0.1 to 1.6 GHz |
dB |
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± 0.7 |
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f3 dB |
3 dB Bandwidth |
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GHz |
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2.4 |
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VSWR |
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Input VSWR |
f = 0.1 to 3.0 GHz |
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1.5:1 |
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Output VSWR |
f = 0.1 to 3.0 GHz |
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1.7:1 |
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NF |
50 Ω Noise Figure |
f = 1.0 GHz |
dB |
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6.0 |
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P1 dB |
Output Power at 1 dB Gain Compression |
f = 1.0 GHz |
dBm |
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10.0 |
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IP3 |
Third Order Intercept Point |
f = 1.0 GHz |
dBm |
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23.0 |
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tD |
Group Delay |
f = 1.0 GHz |
psec |
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140 |
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Vd |
Device Voltage |
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V |
4.0 |
5.0 |
6.0 |
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dV/dT |
Device Voltage Temperature Coefficient |
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mV/°C |
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–8.0 |
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Note:
1.The recommended operating current range for this device is 20 to 40 mA. Typical performance as a function of current is on the following page.
Part Number Ordering Information
Part Number |
No. of Devices |
Container |
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MSA-0386-TR1 |
1000 |
7" Reel |
MSA-0386-BLK |
100 |
Antistatic Bag |
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For more information, see “Tape and Reel Packaging for Semiconductor Devices”.
6-315
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