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Cascadable Silicon Bipolar
MMICÊ Amplifiers
Technical Data
Features
•Usable Gain to 6.0Ê GHz
•High Gain:
32.5dB Typical at 0.1Ê GHz
23.0dB Typical at 1.0Ê GHz
•Low Noise Figure:
3.0Ê dBTypicalat1.0Ê GHz
•Cost Effective Ceramic Microstrip Package
Description
The MSA-0835 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a cost effective, microstrip package. This MMIC is designed for use as a general purpose 50 Ω gain block above
0.5Ê GHz and can be used as a high gain transistor below this frequency. Typical applications include narrow and moderate band IF and RF amplifiers in commercial and industrial applications.
The MSA-series is fabricated using HP’s 10 GHz fT, 25Ê GHz MAXf , silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility.
Available in cut lead version (packageÊ 36)asMSA-0836.
Typical Biasing Configuration
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R bias |
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VCC > 10 V |
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RFC (Optional) |
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C block |
4 |
C block |
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3 |
IN |
1 |
MSA |
OUT |
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Vd = 7.8 V |
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2 |
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MSA-0835, -0836
35 micro-X Package[1]
Note:
1.Short leaded 36 package available upon request.
5965-9596E |
6-414 |
MSA-0835, -0836 Absolute Maximum Ratings
Parameter |
Absolute Maximum[1] |
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Thermal Resistance[2,5]: |
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θjc =175°C/W |
Device Current |
80 mA |
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Power Dissipation[2,3] |
750mW |
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RF Input Power |
+13dBm |
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Junction Temperature |
200°C |
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Storage Temperature[4] |
–65°C to 200°C |
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Notes:
1.Permanent damage may occur if any of these limits are exceeded.
2.TCASE = 25°C.
3.Derate at 5.7 mW/°C for TC > 69°C.
4.Storage above +150°C may tarnish the leads of this package making it difficult to solder into a circuit.
5.The small spot size of this technique results in a higher, though more accurate determination of θjc than do alternate methods. See MEASUREMENTS section “Thermal Resistance” for more information.
Electrical Specifications[1], TA = 25°C
Symbol |
Parameters and Test Conditions: Id = 36 mA, ZO = 50 Ω |
Units |
Min. |
Typ. |
Max. |
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GP |
PowerGain(|S21|2) |
f = 0.1 GHz |
dB |
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32.5 |
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f = 1.0 GHz |
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22.0 |
23.0 |
25.0 |
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f = 4.0 GHz |
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10.5 |
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VSWR |
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Input VSWR |
f = 1.0 to 3.0 GHz |
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2.0:1 |
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Output VSWR |
f = 1.0 to 3.0 GHz |
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1.5:1 |
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NF |
50 Ω Noise Figure |
f = 1.0 GHz |
dB |
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3.0 |
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P1 dB |
Output Power at 1 dB Gain Compression |
f = 1.0 GHz |
dBm |
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12.5 |
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IP3 |
Third Order Intercept Point |
f = 1.0 GHz |
dBm |
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27.0 |
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tD |
Group Delay |
f = 1.0 GHz |
psec |
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125 |
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Vd |
Device Voltage |
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V |
7.0 |
7.8 |
8.4 |
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dV/dT |
Device Voltage Temperature Coefficient |
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mV/°C |
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–17.0 |
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Note:
1.The recommended operating current range for this device is 20 to 40 mA. Typical performance as a function of current is on the following page.
Part Number Ordering Information
Part Number |
No. of Devices |
Container |
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MSA-0835 |
10 |
Strip |
MSA-0836-BLK |
100 |
Antistatic Bag |
MSA-0836-TR1 |
1000 |
7" Reel |
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For more information, see “Tape and Reel Packaging for Semiconductor Devices”.
6-415
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