HP MSA-0786-BLK, MSA-0786-TR1 Datasheet

Cascadable Silicon Bipolar

MMICÊ Amplifier

Technical Data

Features

•Cascadable 50 Ω Gain Block

•Low Operating Voltage:

4.0 V Typical Vd

•3 dB Bandwidth:

DC to 2.0 GHz

•12.5Ê dB Typical Gain at 1.0Ê GHz

•Unconditionally Stable (k>1)

•Surface Mount Plastic Package

•Tape-and-Reel Packaging Option Available[1]

Note:

1.Refer to PACKAGING section “Tape- and-Reel Packaging for Semiconductor Devices.”

Description

The MSA-0786 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a low cost, surface mount plastic package. This MMIC is designed for use as a general purpose 50 Ω gain block. Applications include narrow and broad band IF and RF amplifiers in commercial and industrial applications.

The MSA-series is fabricated using HP’s 10 GHz fT, 25Ê GHz MAXf , silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metalli-

MSA-0786

86 Plastic Package

zation to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility.

Typical Biasing Configuration

			R bias
			VCC > 5 V
			RFC (Optional)
	C block	4	C block
			3
IN	1	MSA	OUT
			Vd = 4.0 V
		2

5965-9594E

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MSA-0786 Absolute Maximum Ratings

Parameter	Absolute Maximum[1]
Device Current	60 mA
Power Dissipation[2,3]	275mW
RF Input Power	+13dBm
Junction Temperature	150°C
Storage Temperature	–65 to 150°C

Notes:

1.Permanent damage may occur if any of these limits are exceeded.

2.TCASE = 25°C.

3.Derate at 8.3 mW/°C for TC > 117°C.

4.See MEASUREMENTS section “Thermal Resistance” for more information.

Thermal Resistance[2,4]:

θjc = 120°C/W

Electrical Specifications[1], TA = 25°C

Symbol	Parameters and Test Conditions: Id = 22 mA, ZO = 50 Ω		Units	Min.	Typ.	Max.
GP	PowerGain(|S21|2)	f = 0.1 GHz	dB		13.5
		f = 1.0 GHz		10.5	12.5
GP	Gain Flatness	f = 0.1 to 1.3 GHz	dB		± 0.7
f3 dB	3 dB Bandwidth		GHz		2.0
VSWR	Input VSWR	f = 0.1 to 2.5 GHz			1.7:1
	Output VSWR	f = 0.1 to 2.5 GHz			1.7:1
NF	50 Ω Noise Figure	f = 1.0 GHz	dB		5.0
P1 dB	Output Power at 1 dB Gain Compression	f = 1.0 GHz	dBm		2.0
IP3	Third Order Intercept Point	f = 1.0 GHz	dBm		19.0
tD	Group Delay	f = 1.0 GHz	psec		150
Vd	Device Voltage		V	3.2	4.0	4.8
dV/dT	Device Voltage Temperature Coefficient		mV/°C		–7.0

Note:

1.The recommended operating current range for this device is 15 to 40 mA. Typical performance as a function of current is on the following page.

Part Number Ordering Information

Part Number	No. of Devices	Container
MSA-0786-TR1	1000	7" Reel
MSA-0786-BLK	100	Antistatic Bag

For more information, see “Tape and Reel Packaging for Semiconductor Devices”.

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