Siemens CNY17F-4, CNY17F-3, CNY17F-2, CNY17F-1 Datasheet

FEATURES

•High Current Transfer Ratio CNY17F-1, 40-80% CNY17F-2, 63-125% CNY17F-3, 100-200% CNY17F-4, 160-320%

•Breakdown Voltage, 5300 VACRMS

•High Collector-Emitter Voltage

•VCEO=70 V

•No Base Terminal Connection for Improved Common Mode Interface Immunity

•Field-Effect Stable by TRIOS*

•Long Term Stability

•Industry Standard Dual-in-Line Package

•Underwriters Lab File #E52744

• D E VDE #0884, Available with Option 1
	V
Maximum Ratings (TA=25°C)
Emitter
Reverse Voltage ................................................			6 V
DC Forward Current ....................................			60 mA
Surge Forward Current (t ≤10 µs) ...................			2.5 A
Total Power Dissipation ............................			100 mW
Detector
Collector-Emitter Breakdown Voltage .............			70 V
Collector Current ..........................................			50 mA
Collector Current (t≤1 ms).........................			100 mA
Total Power Dissipation ............................			150 mW

Package

Isolation Test Voltage (between emitter and detector

referred to standard climate 23/50
DIN 50014) ....................................	5300 VACRMS
Creepage ....................................................		>7 mm
Clearance...................................................		>7 mm
Isolation Thickness between Emitter
and Detector.........................................		≥0.4 mm
Comparative Tracking Index per
DIN IEC 112/VDE 0303, part 1 ......................		175
Isolation Resistance (V10=500 V).................		≥1011 Ω
Storage Temperature Range ............	–55 to +150°C
Ambient Temperature Range ...........	–55 to +100°C
Junction Temperature ...................................		100°C
Soldering Temperature
(max. 10 s, dip soldering:
distance to seating plane ≥1.5 mm)		..........260°C

*TRIOS—TRansparent IOn Shield

CNY17F SERIES

PHOTOTRANSISTOR

NO BASE CONNECTION

OPTOCOUPLER

Dimensions in inches (mm)

Pin One ID

3	2	1
.248 (6.30)
.256 (6.50)
4	5	6
.335 (8.50)
.343 (8.70)

Anode	1	6	Base
Cathode	2	5	Collector
NC	3	4	Emitter

.039		.300 (7.62)
		typ.
(1.00)
Min.	.130 (3.30)
	.150 (3.81)
4°		18°typ.	.110 (2.79)
typ.	.020 (.051) min.
		.010 (.25)	.150 (3.81)
	.031 (0.80)
.018 (0.45)		.014 (.35)
	.035 (0.90)	.300 (7.62)
.022 (0.55)
	.100 (2.54) typ.
		.347 (8.82)

DESCRIPTION

The CNY17F is an optocoupler consisting of a Gallium Arsenide infrared emitting diode optically coupled to a silicon planar phototransistor detector in a plastic plug-in DIP-6 package.

The coupling device is suitable for signal transmission between two electrically separated circuits. The potential difference between the circuits to be coupled is not allowed to exceed the maximum permissible reference voltages.

In contrast to the CNY17 Series, the base terminal of the F type is not connected, resulting in a substantially improved common-mode interference immunity.

Characteristics (TA=25°C)

	Symbol		Unit	Condition
Emitter
Forward Voltage	VF	1.25 (≤1.65)	V	IF=60mA
Breakdown Voltage	VBR	≥≥≥6	V	IR=10 A
Reverse Current	IR	0.01 (≤10)	A	VR=6 V
Capacitance	CO	25	pF	VR=0 V, f=1 MHz
Thermal Resistance	RthJA	750	K/W
Detector
Capacitance	CCE	5.2	pF	VCE=5 V, f=1
				MHz
Thermal Resistance	RthJA	500	K/W
Package
Saturation Voltage,	VCEsat	0.25 (≤0.4)	V	IF=10 mA
Collector-Emitter				IC=2.5 mA
Coupling	CC	0.6	pF
Capacitance
5–1

Current Transfer Ratio (IC/IF at VCE=5 V, 25°C)

and Collector-Emitter Leakage Current by dash number

	-1	-2	-3	-4	Unit
IC/IF at VCE=5 V
(IF=10 mA)	40–80	63-125	100–200	160–320	%
IC/IF at VCE=5 V
(IF=1 mA)	30 (>13)	45 (>22)	70 (>34)	90 (>56)	%
Collector-Emitter	2 (≤ 50)	2 (≤ 50)	5 (≤ 100)	5 (≤ 100)
Leakage Current					nA
(VCE=10 V) (ICEO)

Figure 1. Linear operation (without saturation)

IF

RL=75 W

VCC=5 V

IC

47 W

IF=10 mA, VCC=5 V, TA=25°C

Load Resistance

RL

75

Ω

Turn-On Time

tON

3.0

µs

Rise Time

tR

2.0

µs

Turn-Off Time

tOFF

2.3

µs

Fall Time

tf

2.0

µs

Cut-Off Frequency

fCO

250

kHz

Figure 2. Switching operation (with saturation)

IF

1 KW

VCC=5 V

47 W

-1

-2 and -3

-4

(IF=20 mA)

(IF=10 mA)

(IF=5 mA)

Turn-On Time

tON

3.0

4.2

6.0

µs

Rise Time

tR

2.0

3.0

4.6

µs

Turn-Off Time

tOFF

18

23

25

µs

Fall Time

tF

11

14

15

µs

Figure 3. Current transfer ratio versus diode current (TA=–25°C, VCE=5 V) IC/IF=f (IF)

Figure 4. Current transfer ratio versus diode current (TA=0°C, VCE=5 V) IC/IF=f (IF)

Figure 5. Current transfer ratio versus diode current (TA=25°C, VCE=5 V) IC/IF=f (IF)

CNY17F

5–2