Siemens CNY17-2, CNY17-1, CNY17-4, CNY17-3 Datasheet

FEATURES

• High Current Transfer Ratio CNY17-1, 40 to 80% CNY17-2, 63 to 125% CNY17-3, 100 to 200% CNY17-4, 160 to 320%

• Breakdown Voltage, 5300 VACRMS

• Field-Effect Stable by TRIOS*

•	Long Term Stability
•	Industry Standard Dual-in-Line Package
•	Underwriters Lab File #E52744
•	D E VDE #0884, Available with Option 1
	V

DESCRIPTION

The CNY17 is an optically coupled pair consisting of a Gallium Arsenide infrared emitting diode optically coupled to a silicon NPN phototransistor.

Signal information, including a DC level, can be transmitted by the device while maintaining a high degree of electrical isolation between input and output.

The CNY17 can be used to replace relays and transformers in many digital interface applications, as well as analog applications such as CRT modulation.

Maximum Ratings (TA=25°C)
Emitter
Reverse Voltage .................................................			6 V
Forward Current............................................			60 mA
Surge Current (t≤10µs)...................................			2.5 A
Power Dissipation.......................................			100 mW
Detector
Collector-Emitter Breakdown Voltage...............			70 V
Emitter-Base Breakdown Voltage .......................			7 V
Collector Current ..........................................			50 mA
Collector Current (t <1 ms).........................			100 mA
Power Dissipation.......................................			150 mW
Package
Isolation Test Voltage (Between emitter &
detector referred to climate DIN 40046,
part 2, Nov. 74) ..............................		5300 VACRMS
Creepage Distance..........................................			≥7 mm
Clearance Distance .........................................			≥7 mm
Isolation Thickness between
Emitter and Detector.................................			≥0.4 mm
Comparative Tracking Index per DIN IEC 112/
VDE0303, part 1.............................................			175
Isolation Resistance			≥1012 Ω
V	=500 V, T =25°C...................................
IO	A		≥1011 Ω
V	=500 V, T =100°C ................................
IO	A	–55°C to +150°C
Storage Temperature...................
Operating Temperature ...............		–55°C to +100°C
Junction Temperature....................................			100°C

Soldering Temperature (max . 10 s, dip soldering:

distance to seating plane ≥1.5 mm) ..........

260°C

CNY17 SERIES

TRIOS“ PHOTOTRANSISTOR

OPTOCOUPLER

Dimensions in inches (mm)

Pin One ID

3	2	1
.248 (6.30)
.256 (6.50)
4	5	6
.335 (8.50)
.343 (8.70)

Anode	1	6	Base
Cathode	2	5	Collector
NC	3	4	Emitter

.039		.300 (7.62)
		typ.
(1.00)
Min.	.130 (3.30)
	.150 (3.81)
4°		18°typ.	.110 (2.79)
typ.	.020 (.051) min.
		.010 (.25)	.150 (3.81)
	.031 (0.80)
.018 (0.45)		.014 (.35)
	.035 (0.90)	.300 (7.62)
.022 (0.55)
	.100 (2.54) typ.
		.347 (8.82)

Characteristics (TA=25°C)

	Symbol		Unit	Condition
Emitter
Forward Voltage	VF	1.25	V	IF = 60 mA
		(≤1.65)
Breakdown Voltage	VBR	≥6	V	IR = 10 mA
Reverse Current	IR	0.01 (≤10)	A	VR = 6 V
Capacitance		25	pF	VR = 0 V, f =1 MHz
Thermal Resistance	Rthjamb	750	K/W
Detector
Capacitance	CCE	5.2	pF	VCE =5 V, f =1 MHz
	CCB	6.5	pF	VCB =5 V, f =1 MHz
	CEB	7.5	pF	VEB =5 V, f =1 MHz
Thermal Resistance	Rthjamb	500	K/W
Package
Collector-Emitter		0.25 (≤0.4)		IF =10 mA,
Saturation Voltage	VCEsat		V	IC=2.5 mA
Coupling Capacitance	CC	0.6	pF

5–1

This document was created with FrameMaker 4.0.4

Current Transfer Ratio and Collector-Emitter Leakage Current by dash number (TA=25°C)

	-1	-2	-3	-4	Unit
IC/IF at VCE=5 V
(IF=10 mA)	40-80	63-	100-	160-	%
		125	200	320
IC/IF at VCE=5 V
(IF=1 mA)	30	45	70	90	%
	(>13)	(>22)	(>34)	(>56)
Collector-Emitter	2 (≤	2 (≤	5 (≤	5 (≤
Leakage Current					nA
(VCE=10 V)	50)	50)	100)	100)
(ICEO)

Figure 1. Linear Operation (without saturation)

IF

RL=75 W

VCC=5 V

IC

47 W

IF=10 mA, VCC=5 V, TA=25 °C

Load Resistance

RL

75

Ω

Turn-On Time

tON

3.0

µs

Rise Time

tR

2.0

µs

Turn-Off Time

tOFF

2.3

µs

Fall Time

tf

2.0

µs

Cut-off Frequency

fCO

250

kHz

Figure 2. Switching Operation (with saturation)

IF

1 KW

VCC=5 V

47 W

-1

-2 and -3

-4

(IF=20 mA)

(IF=10 mA)

(IF=5 mA)

Turn-On Time

tON

3.0

4.2

6.0

µs

Rise Time

tR

2.0

3.0

4.6

µs

Turn-Off Time

tOFF

18

23

25

µs

Fall Time

tF

11

14

15

µs

Figure 3. Current transfer ratio versus

diode current (TA=–25°C, VCE=5 V) IC/IF=f (IF)

Figure 4. Current transfer ratio versus

diode current (TA=0°C, VCE=5 V) IC/IF=f (IF)

Figure 5. Current transfer ratio versus diode current (TA=25°C, VCE=5 V) IC/IF=f (IF)

5–2