Loading...
Cascadable Silicon Bipolar
MMICÊ Amplifiers
Technical Data
Features
•Cascadable 50 Ω Gain Block
•Low Operating Voltage:
4.0 V Typical Vd
•3 dB Bandwidth:
DC to 2.4 GHz
•13.0 dB Typical Gain at 1.0Ê GHz
•Unconditionally Stable (k>1)
•Cost Effective Ceramic Microstrip Package
Description
The MSA-0735 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a cost effective,
MSA-0735, -0736
microstrip package. This MMIC is 35 micro-X Package[1] designed for use as a general
purpose 50 Ω gain block. Typical applications include narrow and broad band IF and RF amplifiers in industrial and military applications.
The MSA-series is fabricated using HP’s 10 GHz fT, 25Ê GHz fMAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility.
Note:
1.Short leaded 36 package available upon request.
Typical Biasing Configuration
|
|
|
R bias |
|
|
|
VCC > 5 V |
|
|
|
RFC (Optional) |
|
C block |
4 |
C block |
|
|
||
|
|
|
3 |
IN |
1 |
MSA |
OUT |
|
|
Vd = 4.0 V |
|
|
|
2 |
|
|
|
|
5965-9591E |
6-394 |
MSA-0735, -0736 Absolute Maximum Ratings
Parameter |
Absolute Maximum[1] |
Device Current |
60 mA |
|
|
Power Dissipation[2,3] |
275mW |
RF Input Power |
+13dBm |
|
|
Junction Temperature |
200°C |
Storage Temperature |
–65 to 200°C |
Notes:
1.Permanent damage may occur if any of these limits are exceeded.
2.TCASE = 25°C.
3.Derate at 6.5 mW/°C for TC > 157°C.
4.Storage above +150°C may tarnish the leads of this package making it difficult to solder into a circuit.
5.Ths small spot size of this technique results in a higher, though more accurate determination of θjc than do alternate methods. See MEASUREMENTS section “Thermal Resistance” for more information.
Thermal Resistance[2,5]:
θjc =155°C/W
Electrical Specifications[1], TA = 25°C
Symbol |
Parameters and Test Conditions: Id = 22 mA, ZO = 50 Ω |
Units |
Min. |
Typ. |
Max. |
||
GP |
PowerGain(|S21|2) |
f = 0.1 GHz |
dB |
12.5 |
13.5 |
14.5 |
|
GP |
Gain Flatness |
f = 0.1 to 1.3 GHz |
dB |
|
± 0.6 |
± 1.0 |
|
f3 dB |
3 dB Bandwidth |
|
GHz |
|
2.4 |
|
|
VSWR |
|
Input VSWR |
f = 0.1 to 2.5 GHz |
|
|
2.0:1 |
|
|
|
|
|
|
|
|
|
|
Output VSWR |
f = 0.1 to 2.5 GHz |
|
|
1.8:1 |
|
|
|
|
|
|
|
|||
NF |
50 Ω Noise Figure |
f = 1.0 GHz |
dB |
|
4.5 |
|
|
P1 dB |
Output Power at 1 dB Gain Compression |
f = 1.0 GHz |
dBm |
|
5.5 |
|
|
IP3 |
Third Order Intercept Point |
f = 1.0 GHz |
dBm |
|
19.0 |
|
|
|
|
|
|
|
|
|
|
tD |
Group Delay |
f = 1.0 GHz |
psec |
|
140 |
|
|
Vd |
Device Voltage |
|
V |
3.6 |
4.0 |
4.4 |
|
dV/dT |
Device Voltage Temperature Coefficient |
|
mV/°C |
|
–7.0 |
|
|
Note:
1.The recommended operating current range for this device is 15 to 40 mA. Typical performance as a function of current is on the following page.
Part Number Ordering Information
Part Number |
No. of Devices |
Container |
|
|
|
MSA-0735 |
10 |
Strip |
MSA-0736-BLK |
100 |
Antistatic Bag |
MSA-0736-TR1 |
1000 |
7" Reel |
For more information, see “Tape and Reel Packaging for Semiconductor Devices”.
6-395
Loading...