Panasonic AN8085M, AN8085, AN8035M, AN8035, AN8045M Datasheet

AN8000/AN8000M Series

3-pin Positive Output Low Dropout Voltage Regulator (50mA Type)

■ Overview				AN8000 Series						Unit:mm
The AN8000 series is 3-pin low-dropout fixed positive					5.0±0.2				4.0±0.2
							±0.2
output monolithic voltage regulators. Since thier power
							5.1
consumption can be minimized, they are suitable for bat-
tery stabilizing power supply and reference voltage. Thir-							±0.5
teen types of output voltage are available ; 2V, 2.5V, 3V,
							13.5
3.5V (TO-92 only) , 4V, 4.5V, 5V, 6V, 7V, 8V, 8.5V, 9V,
and 10V.							+ 0.2
							0.45 – 0.1			2.3±0.2
					2.54
■ Features									1 : Input
					2	3	1		2 : Output
• Input/output voltage difference : 0.3V (max.)									3 : GND
					(Bottom View)
• Output current of up to 50mA					TO-92 Plastic Package (SSIP003-P-0000)
• Low bias current ; 0.6mA (typ.)										Unit:mm
• Output voltage ; 2V, 2.5V, 3V, 3.5V (TO-92 only) , 4V,				AN8000M Series
							4.6max.
4.5V, 5V, 6V, 7V, 8V, 8.5V, 9V, and 10V.										1.6max.
							1.8max.
• Over-voltage protective circuit built-in.
				2.6	45˚				2.6max.	4.25max.
				0.48max.			0.58max.		0.8min.	0.44max.
						1.5
							3.0
										1 : Output
										2 : GND
					1		2	3		3 : Input
				3-pin Mini Power type Plastic Package (TO-243) (HSIP003-P-0000B)
■ Block Diagram
Starter	Voltage	+		R2
	Reference	Error
		Amp.
		–
			Current	R1			: TO-92
							: TO-243
			Limiter
	1	3		2			R1=5kΩ
							CIN=0.33µF
	3	2	1
VI		–	+	VO			COUT=10µF
		COUT

■ Absolute Maximum Ratings (Ta=25˚C)

	Parameter		Symbol	Rating	Unit
	Supply voltage		VI	20	V
	Supply current		ICC	100	mA
	Power dissipation		PD	650 *	mW
	Operating ambient temperature		Topr	–30 to+80	˚C
	Storage temperature	AN8000 Series	Tstg	–55 to+150	˚C
		AN8000M Series		–55 to+125

*Mounting onto the PCB (20 × 20 × 1.7mm glass epoxy copper foil 1 cm2 or more), for AN8000M Series.

■Electrical Characteristics (Ta=25˚C)

· AN8002/AN8002M (2V Type)

Parameter

Symbol

Condition

min

typ

max

Unit

Output voltage

VO

Tj=25˚C

1.92

2

2.08

V

Line regulation

REGIN

VI=2.5 to 8V, Tj=25˚C

2

40

mV

Load regulation

REGL

IO=1 to 40mA, Tj=25˚C

7

20

mV

IO=1 to 50mA, Tj=25˚C

10

25

mV

Minimum I/O voltage difference

VDIF (min.)

VI=1.9V, IO=20mA, Tj=25˚C

0.06

0.2

V

VI=1.9V, IO=50mA, Tj=25˚C

0.12

0.3

V

Bias current

Ibias

IO=0mA, Tj=25˚C

0.6

1

mA

Ripple rejection ratio

RR

VI=3 to 5V, f=120Hz

62

74

dB

Output noise voltage

Vno

f=10Hz to 100kHz

60

V

Output voltage temperature coefficient

VO/Ta

Tj=–30 to+125˚C

0.1

mV/˚C

Note1)

The specified condition Tj=25˚C means that the test should be conducted with each test time reduced (within 10ms) so that

the drift in characteristic value due to a temperature rise at chip junction can be ignored.

Note2)

Unless otherwise specified, VI=3V, IO=20mA, CO=10 F

· AN8025/AN8025M (2.5V Type)

Parameter

Symbol

Condition

min

typ

max

Unit

Output voltage

VO

Tj=25˚C

2.4

2.5

2.6

V

Line regulation

REGIN

VI=3 to 8.5V, Tj=25˚C

2.5

50

mV

Load regulation

REGL

IO=1 to 40mA, Tj=25˚C

8

20

mV

IO=1 to 50mA, Tj=25˚C

12.5

25

mV

Minimum I/O voltage difference

VDIF (min.)

VI=2.4V, IO=20mA, Tj=25˚C

0.07

0.2

V

VI=2.4V, IO=50mA, Tj=25˚C

0.12

0.3

V

Bias current

Ibias

IO=0mA, Tj=25˚C

0.6

1

mA

Ripple rejection ratio

RR

VI=3.5 to 5.5V, f=120Hz

60

72

dB

Output noise voltage

Vno

f=10Hz to 100kHz

65

V

Output voltage temperature coefficient

VO/Ta

Tj=–30 to+125˚C

0.13

mV/˚C

Note1)

The specified condition Tj=25˚C means that the test should be conducted with each test time reduced (within 10ms) so that

the drift in characteristic value due to a temperature rise at chip junction can be ignored.

Note2)

Unless otherwise specified, VI=3.5V, IO=20mA, CO=10 F

■ Electrical Characteristics (Ta=25˚C)

· AN8003/AN8003M (3V Type)

Parameter

Symbol

Condition

min

typ

max

Unit

Output voltage

VO

Tj=25˚C

2.88

3

3.12

V

Line regulation

REGIN

VI=3.5 to 9V, Tj=25˚C

3

50

mV

Load regulation

REGL

IO=1 to 40mA, Tj=25˚C

9

25

mV

IO=1 to 50mA, Tj=25˚C

15

30

mV

Minimum I/O voltage difference

VDIF (min.)

VI=2.9V, IO=20mA, Tj=25˚C

0.07

0.2

V

VI=2.9V, IO=50mA, Tj=25˚C

0.12

0.3

V

Bias current

Ibias

IO=0mA, Tj=25˚C

0.6

1

mA

Ripple rejection ratio

RR

VI=4 to 6V, f=120Hz

58

70

dB

Output noise voltage

Vno

f=10Hz to 100kHz

70

V

Output voltage temperature coefficient

VO/Ta

Tj=–30 to+125˚C

0.15

mV/˚C

Note1)

The specified condition Tj=25˚C means that the test should be conducted with each test time reduced (within 10ms) so that

the drift in characteristic value due to a temperature rise at chip junction can be ignored.

Note2)

Unless otherwise specified, VI=4V, IO=20mA, CO=10 F

· AN8035/AN8035M (3.5V Type)

Parameter

Symbol

Condition

min

typ

max

Unit

Output voltage

VO

Tj=25˚C

3.36

3.5

3.64

V

Line regulation

REGIN

VI=4 to 9.5V, Tj=25˚C

3.5

50

mV

Load regulation

REGL

IO=1 to 40mA, Tj=25˚C

10

30

mV

IO=1 to 50mA, Tj=25˚C

20

40

mV

Minimum I/O voltage difference

VDIF (min.)

VI=3.4V, IO=20mA, Tj=25˚C

0.07

0.2

V

VI=3.4V, IO=50mA, Tj=25˚C

0.12

0.3

V

Bias current

Ibias

IO=0mA, Tj=25˚C

0.6

1

mA

Ripple rejection ratio

RR

VI=4.5 to 6.5V, f=120Hz

57

69

dB

Output noise voltage

Vno

f=10Hz to 100kHz

75

V

Output voltage temperature coefficient

VO/Ta

Tj=–30 to+125˚C

0.2

mV/˚C

Note1)

The specified condition Tj=25˚C means that the test should be conducted with each test time reduced (within 10ms) so that

the drift in characteristic value due to a temperature rise at chip junction can be ignored.

Note2)

Unless otherwise specified, VI=4.5V, IO=20mA, CO=10 F

· AN8004/AN8004M (4V Type)

Parameter

Symbol

Condition

min

typ

max

Unit

Output voltage

VO

Tj=25˚C

3.84

4

4.16

V

Line regulation

REGIN

VI=4.5 to 10V, Tj=25˚C

3.5

50

mV

Load regulation

REGL

IO=1 to 40mA, Tj=25˚C

10

30

mV

IO=1 to 50mA, Tj=25˚C

20

40

mV

Minimum I/O voltage difference

VDIF (min.)

VI=3.8V, IO=20mA, Tj=25˚C

0.07

0.2

V

VI=3.8V, IO=50mA, Tj=25˚C

0.12

0.3

V

Bias current

Ibias

IO=0mA, Tj=25˚C

0.6

1

mA

Ripple rejection ratio

RR

VI=5 to 7V, f=120Hz

56

67

dB

Output noise voltage

Vno

f=10Hz to 100kHz

80

V

Output voltage temperature coefficient

VO/Ta

Tj=–30 to+125˚C

0.2

mV/˚C

Note1)

The specified condition Tj=25˚C means that the test should be conducted with each test time reduced (within 10ms) so that

the drift in characteristic value due to a temperature rise at chip junction can be ignored.

Note2)

Unless otherwise specified, VI=5V, IO=20mA, CO=10 F