MITSUBISHI IGBT MODULES
CM100TF-24H
HIGH POWER SWITCHING USE INSULATED TYPE
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B |
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D |
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S |
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X |
Q X |
Q X |
N |
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Z - M5 THD |
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P |
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(7 TYP.) |
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Gu P Eu P |
Gv P Ev P |
GwP EwP |
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L |
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P |
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P |
Gu N Eu N |
Gv N Ev N |
GwN EwN |
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J |
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C |
A |
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N |
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U |
V |
W |
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N |
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E |
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K |
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T |
G |
F |
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U |
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M |
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M |
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Y - DIA. |
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M |
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AA |
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AA |
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M |
(4 TYP.) |
TAB #110, t = 0.5 |
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P |
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GuP |
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GvP |
GwP |
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EuP |
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EvP |
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EwP |
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GuN |
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GvN |
GwN |
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EuN |
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EvN |
EwN |
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Outline Drawing and Circuit Diagram
Dimensions |
Inches |
Millimeters |
A |
4.21 |
107.0 |
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B |
4.02 |
102.0 |
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C |
3.543±0.01 |
90.0±0.25 |
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D |
3.15±0.01 |
80.0±0.25 |
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E |
2.01 |
51.0 |
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F |
1.38 |
35.0 |
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G |
1.28 |
32.5 |
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H |
1.26 Max. |
32.0 Max |
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J |
1.18 |
30.0 |
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K |
0.98 |
25.0 |
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L |
0.96 |
24.5 |
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M |
0.79 |
20.0 |
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N |
0.67 |
17.0 |
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Dimensions |
Inches |
Millimeters |
P |
0.57 |
14.5 |
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Q |
0.55 |
14.0 |
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R |
0.47 |
12.0 |
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S |
0.43 |
11.0 |
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T |
0.39 |
10.0 |
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U |
0.33 |
8.5 |
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V |
0.30 |
7.5 |
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X |
0.24 |
6.0 |
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Y |
0.22 |
5.5 |
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Z |
M5 Metric |
M5 |
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AA |
0.08 |
2.0 |
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Description:
Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of six IGBTs in a three phase bridge configuration, with each transistor having a reverse-connected superfast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.
Features:
uLow Drive Power
uLow VCE(sat)
uDiscrete Super-Fast Recovery Free-Wheel Diode
uHigh Frequency Operation
uIsolated Baseplate for Easy Heat Sinking
Applications:
uAC Motor Control
uMotion/Servo Control
uUPS
uWelding Power Supplies
Ordering Information:
Example: Select the complete part module number you desire from the table below -i.e. CM100TF-24H
is a 1200V (VCES), 100 Ampere Six-IGBT Module.
Type |
Current Rating |
VCES |
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Amperes |
Volts (x 50) |
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CM |
100 |
24 |
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Sep.1998
MITSUBISHI IGBT MODULES
CM100TF-24H
HIGH POWER SWITCHING USE
INSULATED TYPE
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings |
Symbol |
CM100TF-24H |
Units |
Junction Temperature |
Tj |
–40 to 150 |
°C |
Storage Temperature |
Tstg |
–40 to 125 |
°C |
Collector-Emitter Voltage (G-E SHORT) |
VCES |
1200 |
Volts |
Gate-Emitter Voltage (C-E SHORT) |
VGES |
±20 |
Volts |
Collector Current (TC = 25°C) |
IC |
100 |
Amperes |
Peak Collector Current |
ICM |
200* |
Amperes |
Emitter Current** (TC = 25°C) |
IE |
100 |
Amperes |
Peak Emitter Current** |
IEM |
200* |
Amperes |
Maximum Collector Dissipation (TC = 25°C, Tj ≤ 150°C) |
Pc |
780 |
Watts |
Mounting Torque, M5 Main Terminal |
– |
1.47 ~ 1.96 |
N · m |
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Mounting Torque, M5 Mounting |
– |
1.47 ~ 1.96 |
N · m |
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Weight |
– |
830 |
Grams |
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Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) |
Viso |
2500 |
Vrms |
*Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics |
Symbol |
Test Conditions |
Min. |
Typ. |
Max. |
Units |
Collector-Cutoff Current |
ICES |
VCE = VCES, VGE = 0V |
– |
– |
1.0 |
mA |
Gate Leakage Current |
IGES |
VGE = VGES, VCE = 0V |
– |
– |
0.5 |
μA |
Gate-Emitter Threshold Voltage |
VGE(th) |
IC = 10mA, VCE = 10V |
4.5 |
6.0 |
7.5 |
Volts |
Collector-Emitter Saturation Voltage |
VCE(sat) |
IC = 100A, VGE = 15V |
– |
2.5 |
3.4** |
Volts |
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IC = 100A, VGE = 15V, Tj = 150°C |
– |
2.25 |
– |
Volts |
Total Gate Charge |
QG |
VCC = 600V, IC = 100A, VGE = 15V |
– |
500 |
– |
nC |
Emitter-Collector Voltage |
VEC |
IE = 100A, VGE = 0V |
– |
– |
3.5 |
Volts |
** Pulse width and repetition rate should be such that device junction temperature rise is negligible.
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics |
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Symbol |
Test Conditions |
Min. |
Typ. |
Max. |
Units |
Input Capacitance |
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Cies |
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– |
– |
20 |
nF |
Output Capacitance |
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Coes |
VGE = 0V, VCE = 10V |
– |
– |
7 |
nF |
Reverse Transfer Capacitance |
Cres |
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– |
– |
4 |
nF |
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Resistive |
Turn-on Delay Time |
td(on) |
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– |
– |
250 |
ns |
Load |
Rise Time |
tr |
VCC = 600V, IC = 100A, |
– |
– |
350 |
ns |
Switching |
Turn-off Delay Time |
td(off) |
VGE1 = VGE2 = 15V, RG = 3.1Ω |
– |
– |
300 |
ns |
Times |
Fall Time |
tf |
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– |
– |
350 |
ns |
Diode Reverse Recovery Time |
trr |
IE = 100A, diE/dt = –200A/μs |
– |
– |
250 |
ns |
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Diode Reverse Recovery Charge |
Qrr |
IE = 100A, diE/dt = –200A/μs |
– |
0.74 |
– |
μC |
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Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics |
Symbol |
Test Conditions |
Min. |
Typ. |
Max. |
Units |
Thermal Resistance, Junction to Case |
Rth(j-c) |
Per IGBT |
– |
– |
0.16 |
°C/W |
Thermal Resistance, Junction to Case |
Rth(j-c) |
Per FWDi |
– |
– |
0.35 |
°C/W |
Contact Thermal Resistance |
Rth(c-f) |
Per Module, Thermal Grease Applied |
– |
– |
0.025 |
°C/W |
Sep.1998
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