INFINEON BC846A, BC846B, BC847A, BC847B, BC847C User Manual
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BC846...BC850
NPN Silicon AF Transistors
•For AF input stages and driver applications
•High current gain
•Low collector-emitter saturation voltage
•Low noise between 30 Hz and 15 kHz
•Complementary types: BC856, BC857, BC858
BC859, BC860 (PNP)
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VPS05161 |
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Type |
Marking |
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Pin Configuration |
Package |
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BC846A |
1As |
1 = B |
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2 = E |
3 = C |
SOT23 |
BC846B |
1Bs |
B = 1 |
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2 = E |
3 = C |
SOT23 |
BC847A |
1Es |
B = 1 |
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2 = E |
3 = C |
SOT23 |
BC847B |
1Fs |
1 = B |
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2 = E |
3 = C |
SOT23 |
BC847C |
1Gs |
1 = B |
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2 = E |
3 = C |
SOT23 |
BC848A |
1Js |
1 = B |
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2 = E |
3 = C |
SOT23 |
BC848B |
1Ks |
1 = B |
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2 = E |
3 = C |
SOT23 |
BC848C |
1Ls |
1 = B |
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2 = E |
3 = C |
SOT23 |
BC849B |
2Bs |
1 = B |
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2 = E |
3 = C |
SOT23 |
BC849C |
2Cs |
1 = B |
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2 = E |
3 = C |
SOT23 |
BC850B |
2Fs |
1 = B |
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2 = E |
3 = C |
SOT23 |
BC850C |
2Gs |
1 = B |
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2 = E |
3 = C |
SOT23 |
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1 |
2005-05-30 |
BC846...BC850
Maximum Ratings
Parameter |
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Symbol |
BC846 |
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BC847 |
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BC848 |
Unit |
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BC850 |
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BC849 |
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Collector-emitter voltage |
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VCEO |
65 |
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45 |
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30 |
V |
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Collector-base voltage |
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VCBO |
80 |
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50 |
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30 |
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Collector-emitter voltage |
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VCES |
80 |
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50 |
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30 |
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Emitter-base voltage |
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VEBO |
6 |
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6 |
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6 |
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DC collector current |
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IC |
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100 |
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mA |
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Peak collector current |
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ICM |
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200 |
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mA |
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Peak base current |
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IBM |
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200 |
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Peak emitter current |
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IEM |
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200 |
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Total power dissipation, TS = 71 °C |
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Ptot |
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330 |
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mW |
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Junction temperature |
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Tj |
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150 |
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°C |
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Storage temperature |
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Tstg |
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-65 ... 150 |
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Thermal Resistance |
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Junction - soldering point1) |
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R |
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≤240 |
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K/W |
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thJS |
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Electrical Characteristics at TA = 25°C, unless otherwise specified. |
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Parameter |
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Symbol |
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Values |
Unit |
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min. |
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typ. |
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max. |
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DC Characteristics |
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Collector-emitter breakdown voltage |
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V(BR)CEO |
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V |
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IC = 10 mA, IB = 0 |
BC846 |
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65 |
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- |
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- |
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BC847/850 |
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45 |
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- |
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- |
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BC848/849 |
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30 |
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- |
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- |
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Collector-base breakdown voltage |
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V(BR)CBO |
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IC = 10 µA, IE = 0 |
BC846 |
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80 |
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- |
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- |
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BC847/850 |
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50 |
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- |
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- |
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BC848/849 |
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30 |
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- |
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- |
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1For calculation of RthJA please refer to Application Note Thermal Resistance
2 |
2005-05-30 |
BC846...BC850
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter |
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Symbol |
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Values |
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Unit |
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min. |
typ. |
max. |
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DC Characteristics |
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Collector-emitter breakdown voltage |
V(BR)CES |
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V |
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IC = 10 µA, VBE = 0 |
BC846 |
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80 |
- |
- |
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BC847/850 |
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50 |
- |
- |
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BC848/849 |
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30 |
- |
- |
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Emitter-base breakdown voltage |
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V(BR)EBO |
6 |
- |
- |
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IE = 1 µA, IC = 0 |
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Collector cutoff current |
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ICBO |
- |
- |
15 |
nA |
VCB = 40 V, IE = 0 |
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Collector cutoff current |
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ICBO |
- |
- |
5 |
µA |
VCB = 30 V, IE = 0 , TA = 150 °C |
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DC current gain 1) |
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hFE |
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- |
IC = 10 µA, VCE = 5 V |
hFE-group A |
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- |
140 |
- |
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hFE-group B |
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- |
250 |
- |
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hFE-group C |
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- |
480 |
- |
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DC current gain 1) |
hFE-group A |
hFE |
110 |
180 |
220 |
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IC = 2 mA, VCE = 5 V |
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hFE-group B |
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200 |
290 |
450 |
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hFE-group C |
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420 |
520 |
800 |
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Collector-emitter saturation voltage1) |
VCEsat |
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mV |
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IC = 10 mA, IB = 0.5 mA |
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- |
90 |
250 |
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IC = 100 mA, IB = 5 mA |
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- |
200 |
600 |
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Base-emitter saturation voltage |
1) |
VBEsat |
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IC = 10 mA, IB = 0.5 mA |
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- |
700 |
- |
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IC = 100 mA, IB = 5 mA |
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- |
900 |
- |
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Base-emitter voltage 1) |
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VBE(ON) |
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IC = 2 mA, VCE = 5 V |
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580 |
660 |
700 |
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IC = 10 mA, VCE = 5 V |
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- |
- |
770 |
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1) Pulse test: t ≤ 300 s, D = 2%
3 |
2005-05-30 |
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