INFINEON IPB80N08S2-07, IPP80N08S2-07, IPI80N08S2-07 User Manual

IPB80N08S2-07

IPB80N08S2-07

IPP80N08S2-07, IPI80N08S2-07

OptiMOS® Power-Transistor

Product Summary

Features
						V DS			75	V
• N-channel - Enhancement mode
						R DS(on),max (SMD version)			7.1
										mΩ
• Automotive AEC Q101 qualified
						I D
									80	A
• MSL1 up to 260°C peak reflow
• 175°C operating temperature		PG-TO263-3-2			PG-TO220-3-1			PG-TO262-3-1
• Green package (lead free)
• Ultra low Rds(on)
• 100% Avalanche tested
Type	Package		Ordering Code			Marking
IPB80N08S2-07	PG-TO263-3-2		SP0002-19048			2N0807
IPP80N08S2-07	PG-TO220-3-1		SP0002-19040			2N0807
IPI80N08S2-07	PG-TO262-3-1		SP0002-19043			2N0807

Maximum ratings, at T j=25 °C, unless otherwise specified

Parameter	Symbol	Conditions	Value	Unit
Continuous drain current1)	I D	T C=25 °C, V GS=10 V	80	A
		T C=100 °C,	80
		V GS=10 V2)
Pulsed drain current2)	I D,pulse	T C=25 °C	320
Avalanche energy, single pulse2)	E AS	I D=80A	810	mJ
Gate source voltage4)	V GS		±20	V
Power dissipation	P tot	T C=25 °C	300	W
Operating and storage temperature	T j, T stg		-55 ... +175	°C
IEC climatic category; DIN IEC 68-1			55/175/56

Rev. 1.0

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2006-03-03

IPB80N08S2-07

IPP80N08S2-07, IPI80N08S2-07

	Parameter	Symbol	Conditions		Values		Unit
				min.	typ.	max.
	Thermal characteristics2)
	Thermal resistance, junction - case	R thJC		-	-	0.5	K/W
	Thermal resistance, junction -	R thJA		-	-	62
	ambient, leaded
	SMD version, device on PCB	R thJA	minimal footprint	-	-	62
			6 cm2 cooling area5)	-	-	40
	Electrical characteristics, at T j=25 °C, unless otherwise specified
	Static characteristics
	Drain-source breakdown voltage	V (BR)DSS	V GS=0 V, I D= 1 mA	75	-	-	V
	Gate threshold voltage	V GS(th)	V DS=V GS, I D=250 µA	2.1	3.0	4.0
	Zero gate voltage drain current	I DSS	V DS=75 V, V GS=0 V,	-	0.01	1	µA
			T j=25 °C
			V DS=75 V, V GS=0 V,	-	1	100
			T j=125 °C2)
	Gate-source leakage current	I GSS	V GS=20 V, V DS=0 V	-	1	100	nA
	Drain-source on-state resistance	RDS(on)	V GS=10 V, I D=80 A,	-	5.8	7.4	mΩ
			V GS=10 V, I D=80 A,	-	5.5	7.1
			SMD version

Rev. 1.0

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2006-03-03

IPB80N08S2-07

IPP80N08S2-07, IPI80N08S2-07

	Parameter	Symbol	Conditions		Values		Unit
				min.	typ.	max.
	Dynamic characteristics2)
	Input capacitance	C iss		-	4700	-	pF
			V GS=0 V, V DS=25 V,
	Output capacitance	C oss		-	1260	-
			f =1 MHz
	Reverse transfer capacitance	Crss		-	580	-
	Turn-on delay time	t d(on)		-	26	-	ns
	Rise time	t r	V DD=40 V, V GS=10 V,	-	50	-
	Turn-off delay time	t d(off)	I D=80 A, R G=2.2 Ω	-	61	-
	Fall time	t f		-	30	-
	Gate Charge Characteristics2)
	Gate to source charge	Q gs		-	25	37	nC
	Gate to drain charge	Q gd	V DD=60 V, I D=80 A,	-	69	116
	Gate charge total	Q g	V GS=0 to 10 V	-	144	180
	Gate plateau voltage	V plateau		-	5.4	-	V
	Reverse Diode
	Diode continous forward current2)	I S	T C=25 °C	-	-	80	A
	Diode pulse current2)	I S,pulse		-	-	320
	Diode forward voltage	V SD	V GS=0 V, I F=80 A,	-	0.9	1.3	V
			T j=25 °C
	Reverse recovery time2)	t rr	V R=40 V, I F=I S,	-	110	140	ns
			di F/dt =100 A/µs
			V R=40 V, I F=I S,
	Reverse recovery charge2)	Q rr		-	470	590	nC
			di F/dt =100 A/µs

1)Current is limited by bondwire; with an R thJC = 0.5K/W the chip is able to carry 132A at 25°C. For detailed information see Application Note ANPS071E at www.infineon.com/optimos

2)Defined by design. Not subject to production test.

3)See diagram 13.

4)Qualified at -20V and +20V.

5)Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air.

Rev. 1.0

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2006-03-03