Infineon BCR133, BCR133F, BCR133L3, BCR133S, BCR133T Schematic [ru]

BCR133...

NPN Silicon Digital Transistor

•Switching in circuit, inverter, interface circuit, drive circuit

•Built in bias resistor (R1 = 10 kΩ, R2 = 10 kΩ)

•BCR133S: Two internally isolated

transistors with good matching in one multichip package

•BCR133S: For orientation in reel see package information below

BCR133/F/L3		BCR133S
BCR133T/W
	C	C1	B2	E2
	3	6	5	4
	R1			R2
		R1
				TR2
	R2	TR1		R1
		R2
1	2	1	2	3
B	E	E1	B1	C2
	EHA07184			EHA07174

Type	Marking		Pin Configuration					Package
BCR133	WCs	1=B	2=E	3=C	-	-	-	SOT23
BCR133F	WCs	1=B	2=E	3=C	-	-	-	TSFP-3
BCR133L3	WC	1=B	2=E	3=C	-	-	-	TSLP-3-4
BCR133S	WCs	1=E1	2=B1	3=C2	4=E2	5=B2	6=C1	SOT363
BCR133T	WC	1=B	2=E	3=C	-	-	-	SC75
BCR133W	WCs	1=B	2=E	3=C	-	-	-	SOT323

1	2006-05-04

							BCR133...
	Maximum Ratings
	Parameter			Symbol		Value		Unit
	Collector-emitter voltage			VCEO		50		V
	Collector-base voltage			VCBO		50
	Input forward voltage			Vi(fwd)		40
	Input reverse voltage			Vi(rev)		10
	Collector current			IC		100		mA
	Total power dissipation-			Ptot				mW
	BCR133, TS ≤ 102°C					200
	BCR133F, TS ≤ 128°C					250
	BCR133L3, TS ≤ 135°C					250
	BCR133S, TS ≤ 115°C					250
	BCR133T, TS ≤ 109°C					250
	BCR133W, TS ≤ 124°C					250
	Junction temperature			Tj		150		°C
	Storage temperature			Tstg		-65 ... 150
	Thermal Resistance
	Parameter			Symbol		Value		Unit
	Junction - soldering point1)			RthJS				K/W
	BCR133					≤ 240
	BCR133F					≤ 90
	BCR133L3					≤ 60
	BCR133S					≤ 140
	BCR133T					≤ 165
	BCR133W					≤ 105
	1For calculation of R		please refer to Application Note Thermal Resistance
	thJA

2	2006-05-04

BCR133...

Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter	Symbol		Values		Unit
		min.	typ.	max.
DC Characteristics
Collector-emitter breakdown voltage	V(BR)CEO	50	-	-	V
IC = 100 µA, IB = 0
Collector-base breakdown voltage	V(BR)CBO	50	-	-
IC = 10 µA, IE = 0
Collector-base cutoff current	ICBO	-	-	100	nA
VCB = 40 V, IE = 0
Emitter-base cutoff current	IEBO	-	-	0.75	mA
VEB = 10 V, IC = 0
DC current gain1)	hFE	30	-	-	-
IC = 5 mA, VCE = 5 V
Collector-emitter saturation voltage1)	VCEsat	-	-	0.3	V
IC = 10 mA, IB = 0.5 mA
Input off voltage	Vi(off)	0.8	-	1.5
IC = 100 µA, VCE = 5 V
Input on voltage	Vi(on)	1	-	2.5
IC = 2 mA, VCE = 0.3 V
Input resistor	R1	7	10	13	kΩ
Resistor ratio	R1/R2	0.9	1	1.1	-
AC Characteristics
Transition frequency	fT	-	130	-	MHz
IC = 10 mA, VCE = 5 V, f = 100 MHz
Collector-base capacitance	Ccb	-	3	-	pF
VCB = 10 V, f = 1 MHz
1Pulse test: t < 300µs; D < 2%

3	2006-05-04

										BCR133...
DC current gain hFE =			ƒ(IC)			Collector-emitter saturation voltage
VCE = 5 V (common emitter configuration)						VCEsat = ƒ(IC), hFE = 20
	10 3					10 2
	-
						mA
FE	10 2					C
h						I
						10 1
	10 1
	10 0	10 0	10 1	mA	10 2	10 0	0.2	0.4	0.6	V	1
	10 -1					0
				IC						VCEsat
Input on Voltage Vi(on) = ƒ(IC)						Input off voltage Vi(off) =			ƒ(IC)

VCE = 0.3V (common emitter configuration)	VCE = 5V (common emitter configuration)
10 2	10 1
mA	mA
10 1	10 0
C	C
I	I

10 0				10 -1

10 -1											10 -2
		10 0	10 1			V		10 2					0.5	1	1.5	2		V		3
10 -1											0
							V	i(on)												Vi(off)

4 2006-05-04

																	BCR133...
Total power dissipation Ptot = ƒ(TS)										Total power dissipation Ptot = ƒ(TS)
BCR133										BCR133F
	300										300
	mW										mW
	250										250
	225										225
tot	200									tot	200
P	175									P	175
	150										150
	125										125
	100										100
	75										75
	50										50
	25										25
	00	15	30	45 60	75	90	105 120	°C	150		00	15	30	45 60	75	90	105 120 °C	150
								TS									TS
Total power dissipation Ptot = ƒ(TS)										Total power dissipation Ptot = ƒ(TS)
BCR133L3										BCR133S
	300										300
	mW										mW
	250										250
	225										225
tot	200									tot	200
P	175									P	175
	150										150
	125										125
	100										100
	75										75
	50										50
	25										25
	00	15	30	45 60	75	90	105 120	°C	150		00	15	30	45 60	75	90	105 120 °C	150
								TS									TS
										5							2006-05-04

BCR133...

Total power dissipation Ptot = ƒ(TS)											Total power dissipation Ptot = ƒ(TS)
BCR133T											BCR133W
	300											300
	mW											mW
	250											250
	225											225
tot	200										tot	200
P	175										P	175
	150											150
	125											125
	100											100
	75											75
	50											50
	25											25
		00	15	30	45 60	75	90	105	120 °C	150		00	15	30	45 60	75	90	105	120	°C	150
									TS											TS
Permissible Pulse Load RthJS =									ƒ(tp)		Permissible Pulse Load
BCR133											Ptotmax/PtotDC = ƒ(tp)
											BCR133
	10 3											10 3
	K/W										totDC
												-
	10	2									P
											/
thJS											totmax	10 2					D = 0
																	0.005
R											P						0.01
																	0.02
	10 1																0.05
							0.5										0.1
																	0.2
							0.2
																	0.5
							0.1					10 1
							0.05
	10 0						0.02
							0.01
							0.005
							D = 0

10 -1	10 -5	10 -4	10 -3	10 -2	s	10 0	10 0	10 -5	10 -4	10 -3	10 -2	s	10 0
10 -6							10 -6
					tp							tp

6 2006-05-04