INFINEON BC856A, BC856B, BC857A, BC857B, BC857C User Manual
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BC856...BC860
PNP Silicon AF Transistors
•For AF input stages and driver applications
•High current gain
•Low collector-emitter saturation voltage
•Low noise between 30 Hz and 15 kHz
•Complementary types: BC846, BC847, BC848
BC849, BC850 (NPN)
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2 |
1 |
VPS05161 |
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Type |
Marking |
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Pin Configuration |
Package |
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BC856A |
3As |
1 = B |
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2 = E |
3 = C |
SOT23 |
BC856B |
3Bs |
1 = B |
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2 = E |
3 = C |
SOT23 |
BC857A |
3Es |
1 = B |
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2 = E |
3 = C |
SOT23 |
BC857B |
3Fs |
1 = B |
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2 = E |
3 = C |
SOT23 |
BC857C |
3Gs |
1 = B |
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2 = E |
3 = C |
SOT23 |
BC858A |
3Js |
1 = B |
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2 = E |
3 = C |
SOT23 |
BC858B |
3Ks |
1 = B |
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2 = E |
3 = C |
SOT23 |
BC858C |
3Ls |
1 = B |
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2 = E |
3 = C |
SOT23 |
BC859B |
4Bs |
1 = B |
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2 = E |
3 = C |
SOT23 |
BC859C |
4Cs |
1 = B |
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2 = E |
3 = C |
SOT23 |
BC860B |
4Fs |
1 = B |
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2 = E |
3 = C |
SOT23 |
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1 |
Jan-28-2005 |
BC856...BC860
Maximum Ratings
Parameter |
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Symbol |
BC856 |
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BC857 |
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BC858 |
Unit |
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BC860 |
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BC859 |
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Collector-emitter voltage |
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VCEO |
65 |
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45 |
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30 |
V |
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Collector-base voltage |
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VCBO |
80 |
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50 |
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30 |
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Collector-emitter voltage |
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VCES |
80 |
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50 |
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30 |
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Emitter-base voltage |
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VEBO |
5 |
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5 |
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5 |
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DC collector current |
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IC |
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100 |
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mA |
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Peak collector current |
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ICM |
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200 |
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mA |
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Peak base current |
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IBM |
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200 |
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Peak emitter current |
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IEM |
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200 |
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Total power dissipation, TS = 71 °C |
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Ptot |
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330 |
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mW |
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Junction temperature |
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Tj |
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150 |
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°C |
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Storage temperature |
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Tstg |
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-65 ... 150 |
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Thermal Resistance |
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Junction - soldering point1) |
|
R |
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≤ |
240 |
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K/W |
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thJS |
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Electrical Characteristics at TA = 25°C, unless otherwise specified. |
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Parameter |
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Symbol |
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Values |
Unit |
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min. |
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typ. |
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max. |
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DC Characteristics |
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Collector-emitter breakdown voltage |
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V(BR)CEO |
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V |
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IC = 10 mA, IB = 0 |
BC856 |
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65 |
|
- |
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- |
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BC857/860 |
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45 |
|
- |
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- |
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BC858/859 |
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30 |
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- |
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- |
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Collector-base breakdown voltage |
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V(BR)CBO |
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IC = 10 µA, IE = 0 |
BC856 |
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80 |
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- |
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- |
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BC857/860 |
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50 |
|
- |
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- |
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BC858/859 |
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30 |
|
- |
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- |
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1For calculation of RthJA please refer to Application Note Thermal Resistance
2 |
Jan-28-2005 |
BC856...BC860
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter |
|
Symbol |
|
Values |
|
Unit |
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min. |
typ. |
max. |
|
DC Characteristics |
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Collector-emitter breakdown voltage |
V(BR)CES |
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|
V |
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IC = 10 µA, VBE = 0 |
BC856 |
|
80 |
- |
- |
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BC857/860 |
|
50 |
- |
- |
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BC858/859 |
|
30 |
- |
- |
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Emitter-base breakdown voltage |
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V(BR)EBO |
5 |
- |
- |
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IE = 1 µA, IC = 0 |
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Collector cutoff current |
|
ICBO |
- |
- |
15 |
nA |
VCB = 30 V, IE = 0 |
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Collector cutoff current |
|
ICBO |
- |
- |
5 |
µA |
VCB = 30 V, IE = 0 , TA = 150 °C |
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DC current gain 1) |
|
hFE |
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|
|
- |
IC = 10 µA, VCE = 5 V |
hFE-group A |
|
- |
140 |
- |
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hFE-group B |
|
- |
250 |
- |
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hFE-group C |
|
- |
480 |
- |
|
DC current gain 1) |
|
hFE |
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IC = 2 mA, VCE = 5 V |
hFE-group A |
|
125 |
180 |
250 |
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hFE-group B |
|
220 |
290 |
475 |
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hFE-group C |
|
420 |
520 |
800 |
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Collector-emitter saturation voltage1) |
VCEsat |
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|
mV |
|
IC = 10 mA, IB = 0.5 mA |
|
|
- |
75 |
300 |
|
IC = 100 mA, IB = 5 mA |
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|
- |
250 |
650 |
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Base-emitter saturation voltage |
1) |
VBEsat |
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|
|
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IC = 10 mA, IB = 0.5 mA |
|
|
- |
700 |
- |
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IC = 100 mA, IB = 5 mA |
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|
- |
850 |
- |
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Base-emitter voltage 1) |
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VBE(ON) |
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IC = 2 mA, VCE = 5 V |
|
|
600 |
650 |
750 |
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IC = 10 mA, VCE = 5 V |
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|
- |
- |
820 |
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1) Pulse test: t ≤ 300 s, D = 2%
3 |
Jan-28-2005 |
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