BSM 25 GD 120 DN2
IGBT Power Module
• Power module
• 3-phase full-bridge
• Including fast free-wheel diodes
• Package with insulated metal base plate
Type |
VCE |
IC |
Package |
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Ordering Code |
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BSM 25 GD 120 DN2 |
1200V |
35A |
ECONOPACK 2 |
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C67076-A2505-A67 |
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BSM 25 GD120DN2E3224 |
1200V |
35A |
ECONOPACK 2K |
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C67070-A2505-A67 |
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Maximum Ratings |
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Parameter |
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Symbol |
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Values |
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Unit |
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Collector-emitter voltage |
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VCE |
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1200 |
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V |
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Collector-gate voltage |
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VCGR |
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RGE = 20 kΩ |
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1200 |
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Gate-emitter voltage |
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VGE |
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± 20 |
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DC collector current |
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IC |
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A |
TC = 25 °C |
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35 |
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TC = 80 °C |
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25 |
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Pulsed collector current, tp = 1 ms |
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ICpuls |
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TC = 25 °C |
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70 |
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TC = 80 °C |
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50 |
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Power dissipation per IGBT |
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Ptot |
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W |
TC = 25 °C |
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200 |
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Chip temperature |
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Tj |
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+ 150 |
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°C |
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Storage temperature |
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Tstg |
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-40 ... + 125 |
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Thermal resistance, chip case |
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RthJC |
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≤ 0.6 |
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K/W |
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Diode thermal resistance, chip case |
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RthJCD |
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≤ 1 |
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Insulation test voltage, t = 1min. |
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Vis |
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2500 |
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Vac |
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Creepage distance |
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- |
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16 |
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mm |
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Clearance |
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- |
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11 |
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DIN humidity category, DIN 40 040 |
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F |
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sec |
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IEC climatic category, DIN IEC 68-1 |
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40 / 125 / 56 |
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1 |
2006-01-31 |
BSM 25 GD 120 DN2
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter |
Symbol |
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Values |
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Unit |
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min. |
typ. |
max. |
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Static Characteristics |
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Gate threshold voltage |
VGE(th) |
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V |
VGE = VCE, IC = 1 mA |
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4.5 |
5.5 |
6.5 |
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Collector-emitter saturation voltage |
VCE(sat) |
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VGE = 15 V, IC = 25 A, Tj = 25 °C |
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2.5 |
3 |
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VGE = 15 V, IC = 25 A, Tj = 125 °C |
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3.1 |
3.7 |
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Zero gate voltage collector current |
ICES |
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mA |
VCE = 1200 V, VGE = 0 V, Tj = 25 °C |
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- |
0.5 |
0.8 |
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VCE = 1200 V, VGE = 0 V, Tj = 125 °C |
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2 |
- |
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Gate-emitter leakage current |
IGES |
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nA |
VGE = 20 V, VCE = 0 V |
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- |
- |
180 |
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AC Characteristics |
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Transconductance |
gfs |
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S |
VCE = 20 V, IC = 25 A |
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10 |
- |
- |
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Input capacitance |
Ciss |
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pF |
VCE = 25 V, VGE = 0 V, f = 1 MHz |
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1650 |
- |
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Output capacitance |
Coss |
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VCE = 25 V, VGE = 0 V, f = 1 MHz |
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- |
250 |
- |
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Reverse transfer capacitance |
Crss |
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VCE = 25 V, VGE = 0 V, f = 1 MHz |
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110 |
- |
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2 |
2006-01-31 |
BSM 25 GD 120 DN2
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter |
Symbol |
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Values |
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Unit |
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min. |
typ. |
max. |
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Switching Characteristics, Inductive Load at Tj = 125 °C |
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Turn-on delay time |
td(on) |
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ns |
VCC = 600 V, VGE = 15 V, IC = 25 A |
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RGon = 47 Ω |
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75 |
150 |
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Rise time |
tr |
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VCC = 600 V, VGE = 15 V, IC = 25 A |
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RGon = 47 Ω |
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65 |
130 |
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Turn-off delay time |
td(off) |
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VCC = 600 V, VGE = -15 V, IC = 25 A |
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RGoff = 47 Ω |
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400 |
600 |
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Fall time |
tf |
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VCC = 600 V, VGE = -15 V, IC = 25 A |
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RGoff = 47 Ω |
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50 |
100 |
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Free-Wheel Diode |
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Diode forward voltage |
VF |
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V |
IF = 25 A, VGE = 0 V, Tj = 25 °C |
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2.3 |
2.8 |
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IF = 25 A, VGE = 0 V, Tj = 125 °C |
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1.8 |
- |
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Reverse recovery time |
trr |
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µs |
IF = 25 A, VR = -600 V, VGE = 0 V |
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diF/dt = -800 A/µs, Tj = 125 °C |
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0.13 |
- |
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Reverse recovery charge |
Qrr |
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µC |
IF = 25 A, VR = -600 V, VGE = 0 V |
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diF/dt = -800 A/µs |
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Tj = 25 °C |
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2.3 |
- |
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Tj = 125 °C |
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6 |
- |
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3 |
2006-01-31 |
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