INFINEON SPP20N60C3, SPB20N60C3, SPI20N60C3, SPA20N60C3 User Manual

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SPP20N60C3, SPB20N60C3

SPI20N60C3, SPA20N60C3

Cool MOS™ Power Transistor			VDS @ Tjmax	650	V
Feature
			RDS(on)	0.19	Ω
• New revolutionary high voltage technology
			ID	20.7	A
• Worldwide best RDS(on) in TO 220

• Ultra low gate charge	P-TO220-3-31	P-TO262-3-1	P-TO263-3-2	P-TO220-3-1
• Periodic avalanche rated
• Extreme dv/dt rated	1	2 3
• High peak current capability
	P-TO220-3-31

•Improved transconductance

•P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)

Type	Package	Ordering Code	Marking
SPP20N60C3	P-TO220-3-1	Q67040-S4398	20N60C3

SPB20N60C3	P-TO263-3-2	Q67040-S4397	20N60C3

SPI20N60C3	P-TO262-3-1	Q67040-S4550	20N60C3

SPA20N60C3	P-TO220-3-31	Q67040-S4410	20N60C3

Maximum Ratings

Parameter			Symbol	Value		Unit
				P B	SPA
				SPP_B I	SPA
Continuous drain current			ID		20.71)	A
T	= 25 °C			20.7	20.71)
C
T	= 100 °C			13.1	13.11)
C
Pulsed drain current, tp limited by Tjmax			ID puls	62.1	62.1	A
Avalanche energy, single pulse			EAS	690	690	mJ
ID=10A, VDD=50V
Avalanche energy, repetitive t limited by T		2)	EAR	1	1
	AR	jmax
ID=20A, VDD=50V
Avalanche current, repetitive tAR limited by Tjmax			IAR	20	20	A
Gate source voltage static			VGS	±20	±20	V
Gate source voltage AC (f >1Hz)			VGS	±30	±30
Power dissipation, TC = 25°C			Ptot	208	34.5	W
Operating and storage temperature			Tj , Tstg	-55...+150		°C

Rev.2.1

Page 1

2004-09-07

SPP20N60C3, SPB20N60C3

SPI20N60C3, SPA20N60C3

Maximum Ratings

Parameter				Symbol				Value			Unit
Drain Source voltage slope				dv/dt			50				V/ns
VDS = 480 V, ID = 20.7 A, Tj = 125 °C
Thermal Characteristics
Parameter				Symbol				Values			Unit
						min.		typ.		max.
Thermal resistance, junction - case				RthJC	-		-		0.6		K/W
Thermal resistance, junction - case, FullPAK				RthJC_FP	-		-		3.6
Thermal resistance, junction - ambient, leaded				RthJA	-		-		62
Thermal resistance, junction - ambient, FullPAK				RthJA_FP	-		-		80
SMD version, device on PCB:				RthJA
@ min. footprint					-		-		62
@ 6 cm2 cooling area 3)					-		35		-
Soldering temperature,				Tsold	-		-		260		°C
1.6 mm (0.063 in.) from case for 10s 4)
Electrical Characteristics, at Tj=25°C unless otherwise specified
Parameter	Symbol		Conditions					Values			Unit
						min.		typ.		max.
Drain-source breakdown voltage	V(BR)DSS	VGS=0V, ID=0.25mA				600		-		-	V
Drain-Source avalanche	V(BR)DS		VGS=0V, ID=20A			-		700		-
breakdown voltage

Gate threshold voltage	VGS(th)		ID=1000 A, VGS=VD			2.1		3		3.9
Zero gate voltage drain current	IDSS		VDS=600V, VGS=0V,								µA
			Tj=25°C			-		0.1		1
			Tj=150°C			-		-		100
Gate-source leakage current	IGSS		VGS=30V, VDS=0V			-		-		100	nA
Drain-source on-state resistance	RDS(on)		VGS=10V, ID=13.1A								Ω
			Tj=25°C			-		0.16		0.19
			Tj=150°C			-		0.43		-
Gate input resistance	RG		f=1MHz, open drain			-		0.54		-

Rev.2.1

Page 2

2004-09-07

SPP20N60C3, SPB20N60C3

SPI20N60C3, SPA20N60C3

Electrical Characteristics

Parameter	Symbol	Conditions		Values		Unit
			min.	typ.	max.
Transconductance	gfs	VDS≥ 2IDRDS(on)max,	-	17.5	-	S
		ID=13.1A
Input capacitance	Ciss	VGS=0V, VDS=25V,	-	2400	-	pF
Output capacitance	Coss	f=1MHz	-	780	-
Reverse transfer capacitance	Crss		-	50	-
Effective output capacitance,5)	Co(er)	VGS=0V,	-	83	-
energy related		VDS=0V to 480V
Effective output capacitance,6)	Co(tr)		-	160	-
time related

Turn-on delay time	td(on)	VDD=380V, VGS=0/13V,	-	10	-	ns
		ID=20.7A,
		RG=3.6Ω , Tj=125
Rise time	tr	VDD=380V, VGS=0/13V,	-	5	-
Turn-off delay time	td(off)	ID=20.7A,	-	67	100
Fall time	t	RG=3.6Ω	-	4.5	12
	f
Gate Charge Characteristics
Gate to source charge	Qgs	VDD=480V, ID=20.7A	-	11	-	nC
Gate to drain charge	Qgd		-	33	-
Gate charge total	Qg	VDD=480V, ID=20.7A,	-	87	114
		VGS=0 to 10V
Gate plateau voltage	V(plateau)	VDD=480V, ID=20.7A	-	5.5	-	V

1Limited only by maximum temperature

2Repetitve avalanche causes additional power losses that can be calculated asPAV=EAR*f.

3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air.

4Soldering temperature for TO-263: 220°C, reflow

5Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS. 6Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.

Rev.2.1

Page 3

2004-09-07

SPP20N60C3, SPB20N60C3

SPI20N60C3, SPA20N60C3

Electrical Characteristics

Parameter

Symbol

Conditions

Values

Unit

min.

typ.

max.

Inverse diode continuous

TC=25°C

20.7

forward current

Inverse diode direct current,

ISM

62.1

pulsed

Inverse diode forward voltage

VSD

VGS=0V, IF=IS

1.2

Reverse recovery time

trr

VR=480V, IF=IS ,

500

800

Reverse recovery charge

Qrr

diF/dt=100A/µs

µC

Peak reverse recovery current

Irrm

Peak rate of fall of reverse

/dt

Tj=25°C

1400

A/µs

recovery current

Typical Transient Thermal Characteristics

Symbol

Value

Unit

Symbol

Value

Unit

SPP_B_I

SPA

SPP_B_I

SPA

Rth1

0.00769

K/W

Cth1

0.0003763

Ws/K

Rth2

0.015

Cth2

0.001411

Rth3

0.029

Cth3

0.001931

Rth4

0.114

0.163

Cth4

0.005297

Rth5

0.136

0.323

Cth5

0.012

0.008453

Rth6

0.059

2.526

Cth6

0.091

0.412

External Heatsink

Ptot (t)

Rth1

Rth,n

Tcase

Cth1	Cth2	Cth,n
		Tam b

Rev.2.1

Page 4

2004-09-07

SPP20N60C3, SPB20N60C3 SPI20N60C3, SPA20N60C3

1 Power dissipation

Ptot = f (TC)
	240	SPP20N60C3
	W
	200
	180
tot	160
tot
P	140
	140
	120
	100
	80
	60
	40
	20
	00	20	40	60	80	100	120	°C	160
								TC

2 Power dissipation FullPAK

Ptot = f (TC)
35
W
25
tot
P
20
15
10
5
00	20	40	60	80	100	120	°C	160
							TC

3 Safe operating area

4 Safe operating area FullPAK

ID = f ( VDS )
parameter : D = 0 , TC=25°C
10 2
A
10 1
D
I
10 0
	tp = 0.001 ms
	tp = 0.01 ms
	tp = 0.1 ms
10 -1	tp = 1 ms
10 -1	DC
10 -2	10 1	10 2	V	10 3
10 0	10 1	10 2	V	10 3
			VDS

Rev.2.1

ID = f (VDS)
parameter: D = 0, TC = 25°C
10 2
A
10 1
D
I
10 0
	tp = 0.001 ms
10 -1	tp = 0.01 ms
10 -1	tp = 0.1 ms
	tp = 1 ms
	tp = 10 ms
	DC
10 -2	10 1	10 2	V	10 3
10 0	10 1	10 2	V	10 3
			VDS
Page 5		2004-09-07

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