INFINEON BC846AT, BC846BT, BC847AT, BC847BT, BC847CT User Manual
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BC846AT
BC846T...BC850T
NPN Silicon AF Transistors
For AF input stages and driver applications
High current gain
Low collector-emitter saturation voltage
Low noise between 30 Hz and 15 kHz
Complementary types:
BC856T, BC857T,
BC858T, BC859T, BC860T
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1 |
VPS05996 |
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Type |
Marking |
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Pin Configuration |
Package |
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BC846AT |
1As |
1 = B |
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2 = E |
3 = C |
SC75 |
BC846BT |
1Bs |
1 = B |
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2 = E |
3 = C |
SC75 |
BC847AT |
1Es |
1 = B |
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2 = E |
3 = C |
SC75 |
BC847BT |
1Fs |
1 = B |
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2 = E |
3 = C |
SC75 |
BC847CT |
1Gs |
1 = B |
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2 = E |
3 = C |
SC75 |
BC848AT |
1Js |
1 = B |
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2 = E |
3 = C |
SC75 |
BC848BT |
1Ks |
1 = B |
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2 = E |
3 = C |
SC75 |
BC848CT |
1Ls |
1 = B |
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2 = E |
3 = C |
SC75 |
BC849BT |
2Bs |
1 = B |
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2 = E |
3 = C |
SC75 |
BC849CT |
2cs |
1 = B |
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2 = E |
3 = C |
SC75 |
BC850BT |
2Fs |
1 = B |
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2 = E |
3 = C |
SC75 |
BC850CT |
2Gs |
1 = B |
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2 = E |
3 = C |
SC75 |
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1 |
Aug-01-2002 |
BC846T...BC850T
Maximum Ratings
Parameter |
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Symbol |
BC846T |
BC847T |
BC848T |
Unit |
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BC850T |
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BC849T |
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Collector-emitter voltage |
VCEO |
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65 |
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45 |
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30 |
V |
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Collector-base voltage |
VCBO |
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80 |
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50 |
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30 |
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Collector-emitter voltage |
VCES |
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80 |
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50 |
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30 |
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Emitter-base voltage |
VEBO |
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6 |
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6 |
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5 |
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DC collector current |
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IC |
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100 |
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mA |
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Peak collector current |
ICM |
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200 |
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mA |
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Peak base current |
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IBM |
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200 |
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Peak emitter current |
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IEM |
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200 |
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Total power dissipation, TS = 109 °C |
Ptot |
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250 |
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mW |
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Junction temperature |
Tj |
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150 |
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°C |
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Storage temperature |
Tstg |
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-65 ... 150 |
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Thermal Resistance |
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Junction - soldering point1) |
RthJS |
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165 |
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K/W |
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Electrical Characteristics at TA = 25°C, unless otherwise specified. |
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Parameter |
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Symbol |
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Values |
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Unit |
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min. |
typ. |
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max. |
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DC Characteristics |
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Collector-emitter breakdown voltage |
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V(BR)CEO |
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V |
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IC = 10 mA, IB = 0 |
BC846T |
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65 |
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- |
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- |
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IC = 10 mA, IB = 0 |
BC847T/BC850T |
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45 |
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- |
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- |
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IC = 10 mA, IB = 0 |
BC848T/BC849T |
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30 |
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- |
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- |
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Collector-base breakdown voltage |
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V(BR)CBO |
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IC = 10 µA, IE = 0 |
BC846T |
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80 |
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- |
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- |
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IC = 10 µA, IE = 0 |
BC847T/850T |
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50 |
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- |
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- |
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IC = 10 µA, IE = 0 |
BC848T/849T |
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30 |
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- |
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- |
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1For calculation of RthJA please refer to Application Note Thermal Resistance
2 |
Aug-01-2002 |
BC846T...BC850T
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter |
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Symbol |
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Values |
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Unit |
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min. |
typ. |
max. |
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DC Characteristics |
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Collector-emitter breakdown voltage |
V(BR)CES |
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V |
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IC = 10 µA, VBE = 0 |
BC846T |
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65 |
- |
- |
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IC = 10 µA, VBE = 0 |
BC847T/850T |
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50 |
- |
- |
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IC = 10 µA, VBE = 0 |
BC848T/849T |
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30 |
- |
- |
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Emitter-base breakdown voltage |
V(BR)EBO |
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IE = 1 µA, IC = 0 |
BC846T |
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6 |
- |
- |
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IE = 1 µA, IC = 0 |
BC847T/BC850T |
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6 |
- |
- |
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IE = 1 µA, IC = 0 |
BC848T/BC849T |
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5 |
- |
- |
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Collector cutoff current |
ICBO |
- |
- |
15 |
nA |
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VCB = 30 V, IE = 0 |
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Collector cutoff current |
ICBO |
- |
- |
5 |
µA |
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VCB = 30 V, IE = 0 , TA = 150 °C |
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DC current gain 1) |
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hFE |
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- |
IC = 10 µA, VCE = 5 V |
hFE-group A |
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- |
140 |
- |
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IC = 10 µA, VCE = 5 V |
hFE-group B |
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- |
250 |
- |
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IC = 10 µA, VCE = 5 V |
hFE-group C |
|
- |
480 |
- |
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DC current gain 1) |
|
hFE |
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IC = 2 mA, VCE = 5 V |
hFE-group A |
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110 |
180 |
220 |
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IC = 2 mA, VCE = 5 V |
hFE-group B |
|
200 |
290 |
450 |
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IC = 2 mA, VCE = 5 V |
hFE-group C |
|
420 |
520 |
800 |
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Collector-emitter saturation voltage1) |
VCEsat |
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mV |
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IC = 10 mA, IB = 0.5 mA |
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- |
90 |
250 |
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IC = 100 mA, IB = 5 mA |
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- |
200 |
600 |
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Base-emitter saturation voltage 1) |
VBEsat |
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IC = 10 mA, IB = 0.5 mA |
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- |
700 |
- |
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IC = 100 mA, IB = 5 mA |
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- |
900 |
- |
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Base-emitter voltage |
1) |
VBE(ON) |
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IC = 2 mA, VCE = 5 V |
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580 |
660 |
700 |
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IC = 10 mA, VCE = 5 V |
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- |
- |
770 |
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1) Pulse test: t ≤ 300 s, D = 2% |
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3 |
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Aug-01-2002 |
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