INFINEON IPB50CN10N G, IPD49CN10N G, IPI50CN10N G, IPP50CN10N G User Manual

IPB50CN10N G IPD49CN10N G

IPI50CN10N G IPP50CN10N G

OptiMOS®2 Power-Transistor

Features

•N-channel, normal level

•Excellent gate charge x R DS(on) product (FOM)

•Very low on-resistance R DS(on)

Product Summary

	V DS		100	V
	R DS(on),max (TO252)		49
				mΩ
	I D		20	A

•175 °C operating temperature

•Pb-free lead plating; RoHS compliant

•Qualified according to JEDEC1) for target application

•Ideal for high-frequency switching and synchronous rectification

Type	IPB50CN10N G	IPD49CN10N G	IPI50CN10N G	IPP50CN10N G
Package	PG-TO263-3	PG-TO252-3	PG-TO262-3	PG-TO220-3
Marking	50CN10N	49CN10N	50CN10N	50CN10N

Maximum ratings, at T j=25 °C, unless otherwise specified

Parameter	Symbol	Conditions	Value	Unit
Continuous drain current	I D	T C=25 °C	20	A
		T C=100 °C	14
Pulsed drain current2)	I D,pulse	T C=25 °C	80
Avalanche energy, single pulse	E AS	I D=20 A, R GS=25 Ω	29	mJ
		I D=20 A, V DS=80 V,
Reverse diode dv /dt	dv /dt	di /dt =100 A/µs,	6	kV/µs
		T j,max=175 °C
Gate source voltage3)	V GS		±20	V
Power dissipation	P tot	T C=25 °C	44	W
Operating and storage temperature	T j, T stg		-55 ... 175	°C
IEC climatic category; DIN IEC 68-1			55/175/56

1)J-STD20 and JESD22

2)see figure 3

3)Tjmax=150°C and duty cycle D=0.01 for Vgs<-5V

Rev. 1.05

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2008-06-24

			IPB50CN10N G IPD49CN10N G
			IPI50CN10N G IPP50CN10N G
Parameter	Symbol	Conditions			Values		Unit
				min.	typ.	max.
Thermal characteristics
Thermal resistance, junction - case	R thJC			-	-	3.4	K/W
Thermal resistance, junction -	R thJA	minimal footprint		-	-	62
ambient (TO220, TO262, TO263)		6 cm2 cooling area4)		-	-	40
Thermal resistance, junction -		minimal footprint		-	-	75
ambient (TO252, TO251)		6 cm2 cooling area4)		-	-	50
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage	V (BR)DSS	V GS=0 V, I D=1 mA		100	-	-	V
Gate threshold voltage	V GS(th)	V DS=V GS, I D=20 µA		2	3	4
Zero gate voltage drain current	I DSS	V DS=80 V, V GS=0 V,		-	0.1	1	µA
		T j=25 °C
		V DS=80 V, V GS=0 V,		-	10	100
		T j=125 °C
Gate-source leakage current	I GSS	V GS=20 V, V DS=0 V		-	1	100	nA
Drain-source on-state resistance	R DS(on)	V GS=10 V, I D=20 A,		-	37	49	mΩ
		(TO252)
		V GS=10 V, I D=20 A,		-	37	49
		(TO251)
		V GS=10 V, I D=20 A,		-	38	50
		(TO263)
		V GS=10 V, I D=20 A,		-	38	50
		(TO220, TO262)
Gate resistance	R G			-	1	-	Ω
Transconductance	g fs	|V DS|>2|I D|R DS(on)max,		11	21	-	S
		I D=20 A
4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.

Rev. 1.05

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2008-06-24

			IPB50CN10N G IPD49CN10N G
			IPI50CN10N G IPP50CN10N G
Parameter	Symbol	Conditions			Values		Unit
				min.	typ.	max.
Dynamic characteristics
Input capacitance	C iss			-	822	1090	pF
		V GS=0 V, V DS=50 V,
Output capacitance	C oss			-	120	160
		f =1 MHz
Reverse transfer capacitance	C rss			-	10	15
Turn-on delay time	t d(on)			-	10	15	ns
Rise time	t r	V DD=50 V, V GS=10 V,		-	4	6
Turn-off delay time	t d(off)	I D=20 A, R G=1.6 Ω		-	14	20
Fall time	t f			-	3	4
Gate Charge Characteristics5)
Gate to source charge	Q gs			-	5	6	nC
Gate to drain charge	Q gd			-	3	4
		V DD=50 V, I D=20 A,
Switching charge	Q sw			-	5	7
		V GS=0 to 10 V
Gate charge total	Q g			-	12	16
Gate plateau voltage	V plateau			-	5.7	-	V
Output charge	Q oss	V DD=50 V, V GS=0 V		-	12	17	nC
Reverse Diode
Diode continous forward current	I S	T C=25 °C		-	-	20	A
Diode pulse current	I S,pulse			-	-	80
Diode forward voltage	V SD	V GS=0 V, I F=20 A,		-	1	1.2	V
		T j=25 °C
Reverse recovery time	t rr	V R=50 V, I F=I S,		-	100		ns
Reverse recovery charge	Q rr	di F/dt =100 A/µs		-	140	-	nC

5) See figure 16 for gate charge parameter definition

Rev. 1.05

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2008-06-24

IPB50CN10N G IPD49CN10N G

IPI50CN10N G IPP50CN10N G

1 Power dissipation

2 Drain current

P tot=f(T C)					I D=f(T C); V GS≥10 V
50					25
40					20
30					15
[W]					[A]
tot					D
P					I
20					10
10					5
0					0
0	50	100	150	200	0	50	100	150	200
		T C [°C]					T C [°C]

3 Safe operating area

I D=f(V DS); T C=25 °C; D =0
parameter: t p
102
			1 µs
		10 µs
		100 µs
101		1 ms
[A]
D
I
		10 ms
100		DC
10-1
10-1	100	101	102
		V DS [V]

Rev. 1.05

4 Max. transient thermal impedance

	Z thJC=f(t p)
	parameter: D =t p/T
		10
	[K/W]		0.5
		1
	thJC		0.2
	Z
			0.1
			0.05
			0.02
			0.01
		0.1	single pulse
	103
			t p [s]
	page 4		2008-06-24