INFINEON BC846A, BC846B, BC846BW, BC847A, BC847B User Manual

BC846...-BC850...

NPN Silicon AF Transistors

•For AF input stages and driver applications

•High current gain

•Low collector-emitter saturation voltage

•Low noise between 30 Hz and 15 kHz

•Complementary types:

BC856...-BC860...(PNP)

1	2006-09-19

BC846...-BC850...

Type	Marking		Pin Configuration					Package
BC846A	1As	1=B	2=E	3=C	-	-	-	SOT23
BC846B	1Bs	1=B	2=E	3=C	-	-	-	SOT23
BC846BW	1Bs	1=B	2=E	3=C	-	-	-	SOT323
BC847A	1Es	1=B	2=E	3=C	-	-	-	SOT23
BC847B	1Fs	1=B	2=E	3=C	-	-	-	SOT23
BC847BF	1Fs	1=B	2=E	3=C	-	-	-	TSFP-3
BC847BL3	1F	1=B	2=E	3=C	-	-	-	TSLP-3-1
BC847BT	1F	1=B	2=E	3=C	-	-	-	SC75
BC847BW	1Fs	1=B	2=E	3=C	-	-	-	SOT323
BC847C	1Gs	1=B	2=E	3=C	-	-	-	SOT23
BC847CW	1Gs	1=B	2=E	3=C	-	-	-	SOT323
BC848A	1Js	1=B	2=E	3=C	-	-	-	SOT23
BC848AW	1Js	1=B	2=E	3=C	-	-	-	SOT323
BC848B	1Ks	1=B	2=E	3=C	-	-	-	SOT23
BC848BF	1Ks	1=B	2=E	3=C	-	-	-	TSFP-3
BC848BL3	1K	1=B	2=E	3=C	-	-	-	TSLP-3-1
BC848BW	1Ks	1=B	2=E	3=C	-	-	-	SOT323
BC848C	1Ls	1=B	2=E	3=C	-	-	-	SOT23
BC848CW	1Ls	1=B	2=E	3=C	-	-	-	SOT323
BC849B	2Bs	1=B	2=E	3=C	-	-	-	SOT23
BC849BF	2Bs	1=B	2=E	3=C	-	-	-	TSFP-3
BC849C	2Cs	1=B	2=E	3=C	-	-	-	SOT23
BC849CW	2Cs	1=B	2=E	3=C	-	-	-	SOT323
BC850B	2Fs	1=B	2=E	3=C	-	-	-	SOT23
BF850BF	2Fs	1=B	2=E	3=C	-	-	-	TSFP-3
BC850BW	2Fs	1=B	2=E	3=C	-	-	-	SOT323
BC850C	2Gs	1=B	2=E	3=C	-	-	-	SOT23
BC850CW	2Gs	1=B	2=E	3=C	-	-	-	SOT323

2	2006-09-19

BC846...-BC850...

Maximum Ratings

Parameter			Symbol	Value	Unit
Collector-emitter voltage			VCEO		V
BC846...				65
BC847..., BC850...				45
BC848..., BC849...				30
Collector-emitter voltage			VCES
BC846...				80
BC847..., BC850...				50
BC848..., BC849...				30
Collector-base voltage			VCBO
BC846...				80
BC847..., BC850...				50
BC848..., BC849...				30
Emitter-base voltage			VEBO
BC846...				6
BC847..., BC850...				6
BC848..., BC849...				6
Collector current			IC	100	mA
Peak collector current			ICM	200
Total power dissipation-			Ptot		mW
TS ≤	71 °C, BC846-BC850			330
TS ≤	128	°C, BC847F-BC850F		250
TS ≤	135	°C, BC847L3-BC848L3		250
TS ≤	109	°C, BC847T		250
TS ≤	124	°C, BC846W-BC850W		250
Junction temperature			Tj	150	°C
Storage temperature			Tstg	-65 ... 150

3	2006-09-19

BC846...-BC850...

Thermal Resistance

Parameter		Symbol		Value		Unit
Junction - soldering point1)		RthJS				K/W
BC846-BC850				≤	240
BC847F-BC850F				≤	90
BC847L3-BC848L3				≤	60
BC847T				≤	165
BC846W-BC850W				≤	105
1For calculation of R	please refer to Application Note Thermal Resistance
thJA

4	2006-09-19

BC846...-BC850...

Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter	Symbol		Values		Unit
		min.	typ.	max.
DC Characteristics
Collector-emitter breakdown voltage	V(BR)CEO				V
IC = 10 mA, IB = 0 , BC846...		65	-	-
IC = 10 mA, IB = 0 , BC847..., BC850...		45	-	-
IC = 10 mA, IB = 0 , BC848..., BC849...		30	-	-
Collector-base breakdown voltage	V(BR)CBO
IC = 10 µA, IE = 0 , BC846...		80	-	-
IC = 10 µA, IE = 0 , BC847..., BC850...		50	-	-
IC = 10 µA, IE = 0 , BC848..., BC849...		30	-	-
Emitter-base breakdown voltage	V(BR)EBO	-	6	-
IE = 0 , IC = 10 µA
Collector-base cutoff current	ICBO				µA
VCB = 45 V, IE = 0		-	0.015	-
VCB = 30 V, IE = 0 , TA = 150 °C		-	5	-
DC current gain1)	hFE				-
IC = 10 µA, VCE = 5 V, hFE-grp.A		-	140	-
IC = 10 µA, VCE = 5 V, hFE-grp.B		-	250	-
IC = 10 µA, VCE = 5 V, hFE-grp.C		-	480	-
IC = 2 mA, VCE = 5 V, hFE-grp.A		110	180	220
IC = 2 mA, VCE = 5 V, hFE-grp.B		200	290	450
IC = 2 mA, VCE = 5 V, hFE-grp.C		420	520	800
Collector-emitter saturation voltage1)	VCEsat				mV
IC = 10 mA, IB = 0.5 mA		-	90	250
IC = 100 mA, IB = 5 mA		-	200	600
Base emitter saturation voltage1)	VBEsat
IC = 10 mA, IB = 0.5 mA		-	700	-
IC = 100 mA, IB = 5 mA		-	900	-
Base-emitter voltage1)	VBE(ON)
IC = 2 mA, VCE = 5 V		580	660	700
IC = 10 mA, VCE = 5 V		-	-	770

1Pulse test: t < 300µs; D < 2%

5	2006-09-19

BC846...-BC850...

Electrical Characteristics at TA = 25°C, unless otherwise specified

Parameter	Symbol		Values		Unit
		min.	typ.	max.
AC Characteristics
Transition frequency	fT	-	250	-	MHz
IC = 10 mA, VCE = 5 V, f = 100 MHz
Collector-base capacitance	Ccb	-	0.95	-	pF
VCB = 10 V, f = 1 MHz
Emitter-base capacitance	Ceb	-	9	-
VEB = 0.5 V, f = 1 MHz
Short-circuit input impedance	h11e				kΩ
IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.A		-	2.7	-
IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.B		-	4.5	-
IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.C		-	8.7	-
Open-circuit reverse voltage transf. ratio	h12e				10-4
IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.A		-	1.5	-
IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.B		-	2	-
IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.C		-	3	-
Short-circuit forward current transf. ratio	h21e
IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.A		-	200	-
IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.B		-	330	-
IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.C		-	600	-
Open-circuit output admittance	h22e				µS
IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.A		-	18	-
IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.B		-	30	-
IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.C		-	60	-
Noise figure	F	-	1.2	4	dB
IC = 200 µA, VCE = 5 V, f = 1 kHz,
∆ f = 200 Hz, RS = 2 kΩ , BC849..., BC850...
Equivalent noise voltage	Vn	-	-	0.135	µV
IC = 200 µA, VCE = 5 V, RS = 2 kΩ ,
f = 10 ... 50 Hz , BC850...

6	2006-09-19