INFINEON BAT15-02L, BAT15-02V, BAT15-03W, BAT15-04W, BAT15-05W User Manual
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BAT15
BAT15...
Silicon Schottky Diodes
Low barrier type for DBS mixer applications up to 12 GHz, phase detectors and modulators
Low noise figure
BAT15-02L/V |
BAT15-04W |
BAT15-05W |
BAT15-099 |
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BAT15-03W |
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BAT15-099R
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ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type |
Package |
Configuration |
LS(nH) |
Marking |
BAT15-02L* |
TSLP-2-1 |
single, leadless |
0.4 |
NP |
BAT15-02V |
SC79 |
single |
0.6 |
n |
BAT15-03W |
SOD323 |
single |
1.8 |
P white |
BAT15-04W |
SOT323 |
series |
1.4 |
S8s |
BAT15-05W |
SOT323 |
common cathode |
1.4 |
S5s |
BAT15-099 |
SOT143 |
anti-parallel pair |
2 |
S5s |
BAT15-099R |
SOT143 |
crossover ring |
2 |
S6s |
* target data
1 |
Jan-30-2003 |
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BAT15... |
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Maximum Ratings at TA = 25°C, unless otherwise specified |
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Parameter |
Symbol |
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Value |
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Unit |
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Diode reverse voltage |
VR |
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4 |
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V |
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Forward current |
IF |
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110 |
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mA |
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Total power dissipation |
Ptot |
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mW |
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BAT15-02L, TS 76 °C |
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100 |
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BAT15-02V, TS 72 °C |
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100 |
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BAT15-03W, TS 70 °C |
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100 |
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BAT15-04W, TS 68 °C |
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100 |
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BAT15-05W, TS 65 °C |
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100 |
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BAT15-099, TS 48 °C |
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100 |
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BAT15-099R, TS 67 °C |
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100 |
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Junction temperature |
Tj |
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150 |
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°C |
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Operating temperature range |
Top |
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-55 ... 150 |
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Storage temperature |
Tstg |
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-55 ... 150 |
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Thermal Resistance |
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Parameter |
Symbol |
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Value |
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Unit |
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Junction - soldering point1) |
R |
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K/W |
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thJS |
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BAT15-02L, BAT15-02V |
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780 |
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BAT15-03W |
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795 |
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BAT15-04W |
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820 |
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BAT15-05W |
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850 |
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BAT15-099 |
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1020 |
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BAT15-099R |
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830 |
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1For calculation of RthJA please refer to Application Note Thermal Resistance
2 |
Jan-30-2003 |
BAT15...
Electrical Characteristics at TA = 25°C, unless otherwise specified
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Parameter |
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Symbol |
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Values |
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Unit |
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min. |
typ. |
max. |
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DC Characteristics |
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Breakdown voltage |
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V(BR) |
4 |
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V |
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I(BR) = 100 µA |
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Forward voltage |
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VF |
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IF = 1 mA |
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0.16 |
0.23 |
0.32 |
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IF = 10 mA |
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0.25 |
0.32 |
0.41 |
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Forward voltage matching1) |
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V |
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20 |
mV |
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F |
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IF = 10 mA |
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AC Characteristics |
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Diode capacitance |
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CT |
- |
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0.35 |
pF |
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VR = 0 V, f = 1 MHz |
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Differential forward resistance |
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RF |
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5.5 |
- |
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IF = 10 mA / 50 mA |
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1 V is the difference between lowest and highest V |
in a multiple diode component. |
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F |
F |
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3 |
Jan-30-2003 |
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