Infineon BCX68, BCX68-10, BCX68-16, BCX68-25 Schematic [ru]

BCX 68

NPN Silicon AF Transistors

•For general AF applications

•High collector current

•High current gain

•Low collector-emitter saturation voltage

•Complementary type: BCX 69 (PNP)

1

2

3

2

VPS05162

Type	Marking		Pin Configuration			Package
BCX 68	CA	1 = B		2 = C	3 = E	SOT-89
BCX 68-10	CB	1 = B		2 = C	3 = E	SOT-89
BCX 68-16	CC	1 = B		2 = C	3 = E	SOT-89
BCX 68-25	CD	1 = B		2 = C	3 = E	SOT-89

Maximum Ratings

Parameter	Symbol	Values	Unit
Collector-emitter voltage	VCEO	20	V
Collector-base voltage	VCBO	25
Emitter-base voltage	VEBO	5
DC collector current	IC	1	A
Peak collector current	ICM	2
Base current	IB	100	mA
Peak base current	IBM	200
Total power dissipation, TS = 130 °C	Ptot	1	W
Junction temperature	Tj	150	°C
Storage temperature	Tstg	-65 ... 150

Thermal Resistance

Junction ambient 1)	RthJA	≤75	K/W
Junction - soldering point	RthJS	20
		≤

1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm2 Cu

1	Sep-30-1999

BCX 68

Electrical Characteristics at TA = 25°C, unless otherwise specified.

Parameter		Symbol		Values		Unit
			min.	typ.	max.
Characteristics
Collector-emitter breakdown voltage		V(BR)CEO	20	-	-	V
IC = 30 mA, IB = 0
Collector-base breakdown voltage		V(BR)CBO	25	-	-
IC = 10 µA, IB = 0
Emitter-base breakdown voltage		V(BR)EBO	5	-	-
IE = 1 µA, IC = 0
Collector cutoff current		ICBO	-	-	100	nA
VCB = 25 V, IE = 0
Collector cutoff current		ICBO	-	-	100	µA
VCB = 25 V, IE = 0 , TA = 150 °C
DC current gain 1)		hFE	50	-	-	-
IC = 5 mA, VCE = 10 V
DC current gain 1)	BCX 68	hFE	85	-	375	-
IC = 500 mA, VCE = 1 V
	BCX 68-10		85	100	160
	BCX 68-16		100	160	250
	BCX 68-25		160	250	375
DC current gain 1)		hFE	60	-	-
IC = 1 A, VCE = 1 V
Collector-emitter saturation voltage1)		VCEsat	-	-	0.5	V
IC = 1 A, IB = 100 mA
Base-emitter voltage 1)		VBE(ON)
IC = 5 mA, VCE = 10 V			-	0.6	-
IC = 1 A, VCE = 1 V			-	-	1
AC Characteristics
Transition frequency		fT	-	100	-	MHz
IC = 100 mA, VCE = 5 V, f = 20 MHz

1) Pulse test: t ≤ 300 s, D = 2%

2	Sep-30-1999