Infineon FZ2400R12KE3-B9-S1 Data Sheet

Technische Information / Technical Information

IGBT-Module FZ2400R12KE3_B9

IGBT-modules

IGBT,Wechselrichter / IGBT,Inverter				Vorläufige Daten
				Preliminary Data
Höchstzulässige Werte / Maximum Rated Values
Kollektor-Emitter-Sperrspannung	Tvj = 25°C			VCES			1200		V
Collector-emitter voltage
Kollektor-Dauergleichstrom	TC = 80°C, Tvj max = 150°C			IC nom			2400		A
Continuous DC collector current	TC = 25°C, Tvj max = 150°C			IC			3200		A
Periodischer Kollektor-Spitzenstrom	tP = 1 ms			ICRM			4800		A
Repetitive peak collector current
Gesamt-Verlustleistung	TC = 25°C, Tvj max = 150			Ptot			11,5		kW
Total power dissipation
Gate-Emitter-Spitzenspannung				VGES			+/-20		V
Gate-emitter peak voltage
Charakteristische Werte / Characteristic Values						min.	typ.	max.
Kollektor-Emitter-Sättigungsspannung	IC = 2400 A, VGE = 15 V		Tvj = 25°C	VCE sat			1,70	2,15	V
Collector-emitter saturation voltage	IC = 2400 A, VGE = 15 V		Tvj = 125°C				2,00		V
Gate-Schwellenspannung	IC = 96,0 mA, VCE = VGE, Tvj = 25°C			VGEth		5,0	5,8	6,5	V
Gate threshold voltage
Gateladung	VGE = -15 V ... +15 V			QG			23,0		µC
Gate charge
Interner Gatewiderstand	Tvj = 25°C			RGint			0,98		Ω
Internal gate resistor
Eingangskapazität	f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V			Cies			170		nF
Input capacitance
Rückwirkungskapazität	f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V			Cres			8,00		nF
Reverse transfer capacitance
Kollektor-Emitter-Reststrom	VCE = 1200 V, VGE = 0 V, Tvj = 25°C			ICES				5,0	mA
Collector-emitter cut-off current
Gate-Emitter-Reststrom	VCE = 0 V, VGE = 20 V, Tvj = 25°C			IGES				400	nA
Gate-emitter leakage current
Einschaltverzögerungszeit, induktive Last	IC = 2400 A, VCE = 600 V		Tvj = 25°C	td on			0,60		µs
Turn-on delay time, inductive load	VGE = ±15 V		Tvj = 125°C				0,66		µs
	RGon = 1,2 Ω
Anstiegszeit, induktive Last	IC = 2400 A, VCE = 600 V		Tvj = 25°C	tr			0,22		µs
Rise time, inductive load	VGE = ±15 V		Tvj = 125°C				0,23		µs
	RGon = 1,2 Ω
Abschaltverzögerungszeit, induktive Last	IC = 2400 A, VCE = 600 V		Tvj = 25°C	td off			0,82		µs
Turn-off delay time, inductive load	VGE = ±15 V		Tvj = 125°C				0,96		µs
	RGoff = 0,3 Ω
Fallzeit, induktive Last	IC = 2400 A, VCE = 600 V		Tvj = 25°C	tf			0,15		µs
Fall time, inductive load	VGE = ±15 V		Tvj = 125°C				0,18		µs
	RGoff = 0,3 Ω
Einschaltverlustenergie pro Puls	IC = 2400 A, VCE = 600 V, LS = 30 nH		Tvj = 25°C						mJ
Turn-on energy loss per pulse	VGE = ±15 V		Tvj = 125°C	Eon			490		mJ
	RGon = 1,2 Ω
Abschaltverlustenergie pro Puls	IC = 2400 A, VCE = 600 V, LS = 30 nH		Tvj = 25°C						mJ
Turn-off energy loss per pulse	VGE = ±15 V		Tvj = 125°C	Eoff			380		mJ
	RGoff = 0,3 Ω
Kurzschlußverhalten	VGE ≤ 15 V, VCC = 900 V	tP ≤ 10 µs, Tvj = 125°C		ISC
SC data	VCEmax = VCES -LsCE ·di/dt						9600		A
Wärmewiderstand, Chip bis Gehäuse	pro IGBT / per IGBT			RthJC				11,0	K/kW
Thermal resistance, junction to case
Temperatur im Schaltbetrieb				Tvj op		-40		125	°C
Temperature under switching conditions

prepared by: MB	date of publication: 2013-10-03
approved by: CL	revision: 2.0

1

Technische Information / Technical Information

IGBT-Module FZ2400R12KE3_B9

IGBT-modules

Vorläufige Daten

Preliminary Data

Diode, Wechselrichter / Diode, Inverter

Höchstzulässige Werte / Maximum Rated Values

	Periodische Spitzensperrspannung	Tvj = 25°C	VRRM		1200		V
	Repetitive peak reverse voltage
	Dauergleichstrom		IF		2400		A
	Continuous DC forward current
	Periodischer Spitzenstrom	tP = 1 ms	IFRM		4800		A
	Repetitive peak forward current
	Grenzlastintegral	VR = 0 V, tP = 10 ms, Tvj = 125°C	I²t		680	kA²s
	I²t - value

Charakteristische Werte / Characteristic Values				min.	typ.	max.
Durchlassspannung	IF = 2400 A, VGE = 0 V	Tvj = 25°C	VF		2,20	2,80	V
Forward voltage	IF = 2400 A, VGE = 0 V	Tvj = 125°C			2,00		V
Rückstromspitze	IF = 2400 A, - diF/dt = 11000 A/µs (Tvj=125°C)Tvj = 25°C				775		A
Peak reverse recovery current	VR = 600 V	Tvj = 125°C	IRM		1200		A
	VGE = -15 V
Sperrverzögerungsladung	IF = 2400 A, - diF/dt = 11000 A/µs (Tvj=125°C)Tvj = 25°C				115		µC
Recovered charge	VR = 600 V	Tvj = 125°C	Qr		270		µC
	VGE = -15 V
Abschaltenergie pro Puls	IF = 2400 A, - diF/dt = 11000 A/µs (Tvj=125°C)Tvj = 25°C				36,0		mJ
Reverse recovery energy	VR = 600 V	Tvj = 125°C	Erec		70,0		mJ
	VGE = -15 V
Wärmewiderstand, Chip bis Gehäuse	pro Diode / per diode		RthJC			20,0	K/kW
Thermal resistance, junction to case
Temperatur im Schaltbetrieb			Tvj op	-40		125	°C
Temperature under switching conditions

Modul / Module

	Isolations-Prüfspannung	RMS, f = 50 Hz, t = 1 min.		VISOL			2,5		kV
	Isolation test voltage
	Innere Isolation	Basisisolierung (Schutzklasse 1, EN61140)					Al2O3
	Internal isolation	basic insulation (class 1, IEC 61140)
	Kriechstrecke	Kontakt - Kühlkörper / terminal to heatsink					32,0		mm
	Creepage distance	Kontakt - Kontakt / terminal to terminal
	Luftstrecke	Kontakt - Kühlkörper / terminal to heatsink					20,0		mm
	Clearance	Kontakt - Kontakt / terminal to terminal
	Vergleichszahl der Kriechwegbildung			CTI			> 400
	Comperative tracking index
						min.	typ.	max.
	Wärmewiderstand, Gehäuse bis Kühlkörper	pro Modul / per module		RthCH			4,00		K/kW
	Thermal resistance, case to heatsink	λPaste = 1 W/(m·K) / λgrease = 1 W/(m·K)
	Modulstreuinduktivität			LsCE			10		nH
	Stray inductance module
	Modulleitungswiderstand, Anschlüsse -								mΩ
	Chip	TC = 25°C, pro Schalter / per switch		RCC'+EE'			0,12
	Module lead resistance, terminals - chip
	Lagertemperatur			Tstg		-40		125	°C
	Storage temperature
	Anzugsdrehmoment f. Modulmontage	Schraube M6 - Montage gem. gültiger Applikationsschrift		M		4,25	-	5,75	Nm
	Mounting torque for modul mounting	Screw M6 - Mounting according to valid application note
	Anzugsdrehmoment f. elektr. Anschlüsse	Schraube M4 - Montage gem. gültiger Applikationsschrift				1,8	-	2,1	Nm
	Terminal connection torque	Screw M4 - Mounting according to valid application note
				M
		Schraube M8 - Montage gem. gültiger Applikationsschrift
						8,0	-	10	Nm
		Screw M8 - Mounting according to valid application note
	Gewicht			G			2250		g
	Weight
	prepared by: MB	date of publication: 2013-10-03
	approved by: CL	revision: 2.0

2

Technische Information / Technical Information

IGBT-Module FZ2400R12KE3_B9

IGBT-modules

																																									Vorläufige Daten
																																									Preliminary Data
Ausgangskennlinie IGBT,Wechselrichter (typisch)																				Ausgangskennlinienfeld IGBT,Wechselrichter (typisch)
output characteristic IGBT,Inverter (typical)																				output characteristic IGBT,Inverter (typical)
IC = f (VCE)																				IC = f (VCE)
VGE = 15 V																				Tvj = 125°C
	4800																				4800
						Tvj = 25°C																									VGE =19 V
	4200					Tvj = 125°C															4200										VGE = 17V
																															VGE = 15V
																															VGE = 13V
																															VGE = 11V
	3600																				3600										VGE = 9V
<![if ! IE]> <![endif]>[A]	3000																			<![if ! IE]> <![endif]>[A]	3000
	2400																				2400
<![if ! IE]> <![endif]>IC																				<![if ! IE]> <![endif]>IC
	1800																				1800
	1200																				1200
	600																				600
	0																				0
	0,0				0,5			1,0		1,5		2,0		2,5		3,0		3,5			0,0					0,5					1,0			1,5			2,0			2,5		3,0		3,5		4,0		4,5		5,0
											VCE [V]																													VCE [V]
Übertragungscharakteristik IGBT,Wechselrichter (typisch)																				SchaltverlusteIGBT,Wechselrichter (typisch)
transfer characteristic IGBT,Inverter(typical)																				switching losses IGBT,Inverter (typical)
IC = f (VGE)																				Eon = f (IC), Eoff = f (IC)
VCE = 20 V																				VGE = ±15 V, RGon = 1.2 Ω, RGoff = 0.3 Ω, VCE = 600 V
	4800																				1600
						Tvj = 25°C																									Eon, Tvj = 125°C
	4200					Tvj		= 125°C													1400										Eoff, Tvj = 125°C
	3600																				1200
<![if ! IE]> <![endif]>C[A]I	3000																			<![if ! IE]> <![endif]>[mJ]E	1000
	2400																				800
	1800																				600
	1200																				400
	600																				200
	0																				0
	5				6			7		8		9		10		11		12			0										800			1600						2400		3200				4000				4800
											VGE [V]																													IC [A]
prepared by: MB														date of publication: 2013-10-03
approved by: CL														revision: 2.0

3