INFINEON IPB77N06S3-09, IPI77N06S3-09, IPP77N06S3-09 User Manual

IPB77N06S3-09

IPB77N06S3-09

IPI77N06S3-09, IPP77N06S3-09

OptiMOS®-T Power-Transistor

Product Summary

Features
				V DS		55	V
• N-channel - Enhancement mode				R DS(on),max (SMD version)		8.8
							mΩ
• Automotive AEC Q101 qualified				I D
						77	A
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green package (lead free)
• Ultra low Rds(on)	PG-TO263-3-2		PG-TO262-3-1		PG-TO220-3-1
• Avalanche tested
• ESD Class 2 (HBM)
EIA/JESD22-A114-B

Type	Package			Ordering Code		Marking
IPB77N06S3-09	PG-TO263-3-2			SP0000-88715		3N0609
IPI77N06S3-09	PG-TO262-3-1			SP0000-88716		3N0609
IPP77N06S3-09	PG-TO220-3-1			SP0000-88717		3N0609
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter		Symbol			Conditions			Value	Unit
Continuous drain current1)		I D			T C=25 °C, V GS=10 V		77		A
					T C=100 °C,		55
					V GS=10 V2)
Pulsed drain current2)		I D,pulse			T C=25 °C		308
Avalanche energy, single pulse3)		E AS			I D=38 A		170		mJ
Drain gate voltage2)		V DG					55
Gate source voltage4)		V GS					±20		V
Power dissipation		P tot			T C=25 °C		107		W
Operating and storage temperature		T j, T stg					-55 ... +175		°C
IEC climatic category; DIN IEC 68-1							55/175/56

Rev. 0.9

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2005-09-16

IPB77N06S3-09

IPI77N06S3-09, IPP77N06S3-09

	Parameter	Symbol	Conditions		Values		Unit
				min.	typ.	max.
	Thermal characteristics2)
	Thermal resistance, junction - case	R thJC		-	-	1.4	K/W
	Thermal resistance, junction -	R thJA		-	-	62
	ambient, leaded
	SMD version, device on PCB	R thJA	minimal footprint	-	-	62
			6 cm2 cooling area5)	-	-	40
	Electrical characteristics, at T j=25 °C, unless otherwise specified
	Static characteristics
	Drain-source breakdown voltage	V (BR)DSS	V GS=0 V, I D=250 µA	55	-	-	V
	Gate threshold voltage	V GS(th)	V DS=V GS, I D=55 µA	2.1	3	4
	Zero gate voltage drain current	I DSS	V DS=25 V, V GS=0 V,	-	0.1	1	µA
			T j=25 °C
			V DS=25 V, V GS=0 V,	-	1	100
			T j=125 °C1)
	Gate-source leakage current	I GSS	V GS=20 V, V DS=0 V	-	1	100	nA
	Drain-source on-state resistance	R DS(on)	V GS=10 V, I D=39 A	-	7.7	9.1	mΩ
			V GS=10 V, I D=39 A,	-	7.4	8.8
			SMD version

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2005-09-16

IPB77N06S3-09

IPI77N06S3-09, IPP77N06S3-09

	Parameter	Symbol	Conditions		Values		Unit
				min.	typ.	max.
	Dynamic characteristics2)
	Input capacitance	C iss		-	5335	-	pF
			V GS=0 V, V DS=25 V,
	Output capacitance	C oss		-	812	-
			f =1 MHz
	Reverse transfer capacitance	Crss		-	775	-
	Turn-on delay time	t d(on)		-	29	-	ns
			V DD=27.5 V,
	Rise time	t r		-	51	-
			V GS=10 V, I D=77 A,
	Turn-off delay time	t d(off)		-	29	-
			R G=10 Ω
	Fall time	t f		-	51	-
	Gate Charge Characteristics2)
	Gate to source charge	Q gs		-	41	-	nC
	Gate to drain charge	Q gd	V DD=11 V, I D=77 A,	-	17	-
	Gate charge total	Q g	V GS=0 to 10 V	-	77	103
	Gate plateau voltage	V plateau		-	7.1	-	V
	Reverse Diode
	Diode continous forward current	I S	T C=25 °C	-	-	77	A
	Diode pulse current2)	I S,pulse		-	-	308
	Diode forward voltage2)	V SD	V GS=0 V, I F=77 A,	-	1	1.3	V
			T j=25 °C
	Reverse recovery time2)	t rr	V R=27.5 V, I F=I S,	-	43	-	ns
			di F/dt =100 A/µs
	Reverse recovery charge2)	Q rr		-	58	-	nC

1)Current is limited by bondwire; with an R thJC = 1.4 K/W the chip is able to carry 77A at 25°C. For detailed information see Application Note ANPS071E at www.infineon.com/optimos

2)Defined by design. Not subject to production test.

3)See diagrams 12 and 13.

4)Qualified at -5V and +20V.

5)Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air.

Rev. 0.9

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2005-09-16