INFINEON BC856BW, BC857AW, BC857BW, BC857CW, BC858BW User Manual

BC856W...BC860W

PNP Silicon AF Transistors

•For AF input stages and driver applications

•High current gain

•Low collector-emitter saturation voltage

•Low noise between 30 Hz and 15 kHz

•Complementary types:

BC846W, BC847W, BC848W

BC849W, BC850W (NPN)

3

2

1 VSO05561

Type	Marking		Pin Configuration			Package
BC856BW	3Bs	1 = B		2 = E	3 = C	SOT323
BC857AW	3Es	1 = B		2 = E	3 = C	SOT323
BC857BW	3Fs	1 = B		2 = E	3 = C	SOT323
BC857CW	3Gs	1 = B		2 = E	3 = C	SOT323
BC858BW	3Ks	1 = B		2 = E	3 = C	SOT323
BC858CW	3Ls	1 = B		2 = E	3 = C	SOT323
BC859AW	4As	1 = B		2 = E	3 = C	SOT323
BC860BW	4Fs	1 = B		2 = E	3 = C	SOT323
BC860CW	4Gs	1 = B		2 = E	3 = C	SOT323

1	Jan-28-2005

Package SOT323

Package Outline

2 ±0.2
0.3-+00..051																		3x
									3											0.1 M
																				+0.2
																				acc. to
																				DIN 6784
																2
				1
		0.65							0.65

0.9 ±0.1

0.1 MAX.

A

2.1±0.1

0.1

1.25 ±0.1

MIN.

0.1

0.15 -+00..051

0.2 M

A

Foot Print

0.6

0.81.6

0.65

0.65

Marking Layout

Manufacturer

Pin 1

Type code

BCR108W

Example

Packing

Code E6327: Reel ø180 mm = 3.000 Pieces/Reel

Code E6433: Reel ø330 mm = 10.000 Pieces/Reel

4	0.2
	8
	2.3

Pin 1

2.15

1.1

BC856W...BC860W

Maximum Ratings

Parameter	Symbol	BC856W	BC857W		BC858W	Unit
			BC860W		BC859W
Collector-emitter voltage	VCEO	65		45	30	V
Collector-base voltage	VCBO	80		50	30
Collector-emitter voltage	VCES	80		50	30
Emitter-base voltage	VEBO	5		5	5
DC collector current	IC	100				mA
Peak collector current	ICM	200				mA
Peak base current	IBM	200
Peak emitter current	IEM	200
Total power dissipation, TS = 124 °C	Ptot	250				mW
Junction temperature	Tj	150				°C
Storage temperature	Tstg	-65 ... 150
Thermal Resistance
Junction - soldering point1)	R		≤	105		K/W
	thJS

Electrical Characteristics at TA = 25°C, unless otherwise specified.

Parameter		Symbol		Values		Unit
			min.	typ.	max.
DC Characteristics
Collector-emitter breakdown voltage		V(BR)CEO				V
IC = 10 mA, IB = 0	BC856W		65	-	-
	BC857/860W		45	-	-
	BC858/859W		30	-	-
Collector-base breakdown voltage		V(BR)CBO
IC = 10 µA, IE = 0	BC856W		80	-	-
	BC857/860W		50	-	-
	BC858/859W		30	-	-

1For calculation of RthJA please refer to Application Note Thermal Resistance

2	Jan-28-2005

BC856W...BC860W

Electrical Characteristics at TA = 25°C, unless otherwise specified.

Parameter		Symbol		Values		Unit
			min.	typ.	max.
DC Characteristics
Collector-emitter breakdown voltage		V(BR)CES				V
IC = 10 µA, VBE = 0	BC856W		80	-	-
	BC857/860W		50	-	-
	BC858/859W		30	-	-
Emitter-base breakdown voltage		V(BR)EBO	5	-	-
IE = 1 µA, IC = 0
Collector cutoff current		ICBO	-	-	15	nA
VCB = 30 V, IE = 0
Collector cutoff current		ICBO	-	-	5	µA
VCB = 30 V, IE = 0 , TA = 150 °C
DC current gain 1)		hFE				-
IC = 10 µA, VCE = 5 V	hFE-group A		-	140	-
	hFE-group B		-	250	-
	hFE-group C		-	480	-
DC current gain 1)		hFE
IC = 2 mA, VCE = 5 V	hFE-group A		125	180	250
	hFE-group B		220	290	475
	hFE-group C		420	520	800
Collector-emitter saturation voltage1)		VCEsat				mV
IC = 10 mA, IB = 0.5 mA			-	75	300
IC = 100 mA, IB = 5 mA			-	250	650
Base-emitter saturation voltage	1)	VBEsat
IC = 10 mA, IB = 0.5 mA			-	700	-
IC = 100 mA, IB = 5 mA			-	850	-
Base-emitter voltage 1)		VBE(ON)
IC = 2 mA, VCE = 5 V			600	650	750
IC = 10 mA, VCE = 5 V			-	-	820

1) Pulse test: t ≤ 300 s, D = 2%

3	Jan-28-2005