INFINEON IPP15N03L, IPB15N03L User Manual

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INFINEON IPP15N03L, IPB15N03L User Manual

IPB15N03L

IPP15N03L

IPB15N03L

OptiMOSâ Buck converter series

Feature

N-Channel

Logic Level

Low On-Resistance RDS(on)

Excellent Gate Charge x RDS(on) product (FOM)

Superior thermal resistance

175°C operating temperature

Avalanche rated

dv/dt rated

Ideal for fast switching buck converters

Product Summary

VDS

 

30

V

RDS(on) max. SMD version

12.6

mΩ

ID

 

42

A

P- TO263 -3-2

P- TO220 -3-1

 

 

 

 

 

 

 

 

 

Type

Package

Ordering Code

Marking

 

 

 

 

IPP15N03L

P- TO220 -3-1

Q67042-S4039

15N03L

 

 

 

 

IPB15N03L

P- TO263 -3-2

Q67040-S4344

15N03L

 

 

 

 

Maximum Ratings, at Tj = 25 °C, unless otherwise specified

Parameter

Symbol

Value

Unit

 

 

 

 

 

Continuous drain current1)

I

D

 

A

 

 

 

 

TC=25°C

 

 

42

 

 

 

 

42

 

 

 

 

 

Pulsed drain current

ID puls

168

 

TC=25°C

 

 

 

 

Avalanche energy, single pulse

EAS

20

mJ

ID=20A, VDD=25V, RGS=25Ω

 

 

 

 

Repetitive avalanche energy, limited by Tjmax2)

EAR

8

 

Reverse diode dv/dt

dv/dt

6

kV/µs

IS=42A, VDS=-V, di/dt=200A/µs, Tjmax=175°C

 

 

 

 

Gate source voltage

VGS

±20

V

Power dissipation

Ptot

83

W

TC=25°C

 

 

 

 

Operating and storage temperature

Tj , Tstg

-55... +175

°C

IEC climatic category; DIN IEC 68-1

 

 

55/175/56

 

 

 

 

 

 

Page 1

2003-01-17

IPP15N03L

IPB15N03L

Thermal Characteristics

Parameter

Symbol

 

Values

 

Unit

 

 

 

 

 

 

 

 

min.

typ.

max.

 

 

 

 

 

 

 

Characteristics

 

 

 

 

 

 

 

 

 

 

 

Thermal resistance, junction - case

RthJC

-

1.2

1.8

K/W

SMD version, device on PCB:

RthJA

 

 

 

 

@ min. footprint

 

-

-

62

 

@ 6 cm2 cooling area 3)

 

-

-

40

 

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

 

 

 

Parameter

Symbol

 

Values

 

Unit

 

 

 

 

 

 

 

 

min.

typ.

max.

 

 

 

 

 

 

 

Static Characteristics

 

 

 

 

 

 

 

 

 

 

 

Drain-source breakdown voltage

V(BR)DSS

30

-

-

V

VGS=0V, ID=1mA

 

 

 

 

 

Gate threshold voltage, VGS = VDS

VGS(th)

1.2

1.6

2

 

ID=40µA

 

 

 

 

 

Zero gate voltage drain current

IDSS

 

 

 

µA

VDS=30V, VGS=0V, Tj=25°C

 

-

0.01

1

 

VDS=30V, VGS=0V, Tj=125°C

 

-

10

100

 

Gate-source leakage current

IGSS

-

1

100

nA

VGS=20V, VDS=0V

 

 

 

 

 

Drain-source on-state resistance

RDS(on)

 

 

 

mΩ

VGS=4.5V, ID=21A

 

-

14.9

19.9

 

VGS=4.5V, ID=21A, SMD version

 

-

14.5

19.6

 

Drain-source on-state resistance

RDS(on)

 

 

 

 

VGS=10V, ID=21A

 

-

10.3

12.9

 

VGS=10V, ID=21A, SMD version

 

-

9.9

12.6

 

1Current limited by bondwire ; with an RthJC = 1.8K/W the chip is able to carry ID= 64A at 25°C, for detailed information see app.-note ANPS071E available at www.infineon.com/optimos

2Defined by design. Not subject to production test.

3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air.

Page 2

2003-01-17

IPP15N03L

IPB15N03L

Electrical Characteristics

Parameter

Symbol

Conditions

 

Values

 

Unit

 

 

 

 

 

 

 

 

 

 

min.

typ.

max.

 

 

 

 

 

 

 

 

Dynamic Characteristics

 

 

 

 

 

 

 

 

 

 

 

 

 

Transconductance

gfs

VDS³2*ID*RDS(on)max,

21

42

-

S

 

 

ID=42A

 

 

 

 

Input capacitance

Ciss

VGS=0V, VDS=25V,

-

850

1130

pF

Output capacitance

Coss

f=1MHz

-

330

330

 

Reverse transfer capacitance

Crss

 

-

90

130

 

Gate resistance

RG

 

-

1

-

Ω

Turn-on delay time

td(on)

VDD=15V, VGS=10V,

-

6.5

9.8

ns

Rise time

tr

ID=21A,

-

20

30

 

Turn-off delay time

td(off)

RG=7.8W

-

24

36

 

Fall time

tf

 

-

14.5

21.8

 

Gate Charge Characteristics

 

 

 

 

 

 

 

 

 

 

 

 

 

Gate to source charge

Qgs

VDD=15V, ID=21A

-

2.7

3.6

nC

Gate to drain charge

Qgd

 

-

7.4

9.3

 

Gate charge total

Qg

VDD=15V, ID=21A,

-

12.7

15.9

 

 

 

VGS=0 to 5V

 

 

 

 

Output charge

Qoss

VDS=15V, ID=21A,

-

12.2

15.3

nC

 

 

VGS=0V

 

 

 

 

Gate plateau voltage

V(plateau)

VDD=15V, ID=21A

-

3.5

-

V

Reverse Diode

 

 

 

 

 

 

 

 

 

 

 

 

 

Inverse diode continuous

IS

TC=25°C

-

-

42

A

forward current

 

 

 

 

 

 

 

 

 

 

 

 

 

Inv. diode direct current, pulsed

ISM

 

-

-

168

 

Inverse diode forward voltage

VSD

VGS=0V, IF=42A

-

0.95

1.25

V

Reverse recovery time

trr

VR=-V, IF=lS,

-

24

31

ns

Reverse recovery charge

Qrr

diF/dt=100A/µs

-

18

23

nC

Page 3

2003-01-17

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