IPB15N03L
IPP15N03L
IPB15N03L
OptiMOSâ Buck converter series
Feature
∙N-Channel
∙Logic Level
∙Low On-Resistance RDS(on)
∙Excellent Gate Charge x RDS(on) product (FOM)
∙Superior thermal resistance
∙175°C operating temperature
∙Avalanche rated
∙dv/dt rated
∙Ideal for fast switching buck converters
Product Summary
VDS |
|
30 |
V |
RDS(on) max. SMD version |
12.6 |
mΩ |
|
ID |
|
42 |
A |
P- TO263 -3-2 |
P- TO220 -3-1 |
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Type |
Package |
Ordering Code |
Marking |
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IPP15N03L |
P- TO220 -3-1 |
Q67042-S4039 |
15N03L |
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IPB15N03L |
P- TO263 -3-2 |
Q67040-S4344 |
15N03L |
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Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter |
Symbol |
Value |
Unit |
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Continuous drain current1) |
I |
D |
|
A |
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TC=25°C |
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42 |
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42 |
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Pulsed drain current |
ID puls |
168 |
|
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TC=25°C |
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Avalanche energy, single pulse |
EAS |
20 |
mJ |
|
ID=20A, VDD=25V, RGS=25Ω |
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Repetitive avalanche energy, limited by Tjmax2) |
EAR |
8 |
|
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Reverse diode dv/dt |
dv/dt |
6 |
kV/µs |
|
IS=42A, VDS=-V, di/dt=200A/µs, Tjmax=175°C |
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Gate source voltage |
VGS |
±20 |
V |
|
Power dissipation |
Ptot |
83 |
W |
|
TC=25°C |
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Operating and storage temperature |
Tj , Tstg |
-55... +175 |
°C |
|
IEC climatic category; DIN IEC 68-1 |
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55/175/56 |
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Page 1 |
2003-01-17 |
IPP15N03L
IPB15N03L
Thermal Characteristics
Parameter |
Symbol |
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Values |
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Unit |
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min. |
typ. |
max. |
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Characteristics |
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Thermal resistance, junction - case |
RthJC |
- |
1.2 |
1.8 |
K/W |
SMD version, device on PCB: |
RthJA |
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@ min. footprint |
|
- |
- |
62 |
|
@ 6 cm2 cooling area 3) |
|
- |
- |
40 |
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Electrical Characteristics, at Tj = 25 °C, unless otherwise specified |
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Parameter |
Symbol |
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Values |
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Unit |
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min. |
typ. |
max. |
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Static Characteristics |
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Drain-source breakdown voltage |
V(BR)DSS |
30 |
- |
- |
V |
VGS=0V, ID=1mA |
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Gate threshold voltage, VGS = VDS |
VGS(th) |
1.2 |
1.6 |
2 |
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ID=40µA |
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Zero gate voltage drain current |
IDSS |
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µA |
VDS=30V, VGS=0V, Tj=25°C |
|
- |
0.01 |
1 |
|
VDS=30V, VGS=0V, Tj=125°C |
|
- |
10 |
100 |
|
Gate-source leakage current |
IGSS |
- |
1 |
100 |
nA |
VGS=20V, VDS=0V |
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Drain-source on-state resistance |
RDS(on) |
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mΩ |
VGS=4.5V, ID=21A |
|
- |
14.9 |
19.9 |
|
VGS=4.5V, ID=21A, SMD version |
|
- |
14.5 |
19.6 |
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Drain-source on-state resistance |
RDS(on) |
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VGS=10V, ID=21A |
|
- |
10.3 |
12.9 |
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VGS=10V, ID=21A, SMD version |
|
- |
9.9 |
12.6 |
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1Current limited by bondwire ; with an RthJC = 1.8K/W the chip is able to carry ID= 64A at 25°C, for detailed information see app.-note ANPS071E available at www.infineon.com/optimos
2Defined by design. Not subject to production test.
3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air.
Page 2 |
2003-01-17 |
IPP15N03L
IPB15N03L
Electrical Characteristics
Parameter |
Symbol |
Conditions |
|
Values |
|
Unit |
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min. |
typ. |
max. |
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Dynamic Characteristics |
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Transconductance |
gfs |
VDS³2*ID*RDS(on)max, |
21 |
42 |
- |
S |
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ID=42A |
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Input capacitance |
Ciss |
VGS=0V, VDS=25V, |
- |
850 |
1130 |
pF |
Output capacitance |
Coss |
f=1MHz |
- |
330 |
330 |
|
Reverse transfer capacitance |
Crss |
|
- |
90 |
130 |
|
Gate resistance |
RG |
|
- |
1 |
- |
Ω |
Turn-on delay time |
td(on) |
VDD=15V, VGS=10V, |
- |
6.5 |
9.8 |
ns |
Rise time |
tr |
ID=21A, |
- |
20 |
30 |
|
Turn-off delay time |
td(off) |
RG=7.8W |
- |
24 |
36 |
|
Fall time |
tf |
|
- |
14.5 |
21.8 |
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Gate Charge Characteristics |
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Gate to source charge |
Qgs |
VDD=15V, ID=21A |
- |
2.7 |
3.6 |
nC |
Gate to drain charge |
Qgd |
|
- |
7.4 |
9.3 |
|
Gate charge total |
Qg |
VDD=15V, ID=21A, |
- |
12.7 |
15.9 |
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VGS=0 to 5V |
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Output charge |
Qoss |
VDS=15V, ID=21A, |
- |
12.2 |
15.3 |
nC |
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VGS=0V |
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Gate plateau voltage |
V(plateau) |
VDD=15V, ID=21A |
- |
3.5 |
- |
V |
Reverse Diode |
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Inverse diode continuous |
IS |
TC=25°C |
- |
- |
42 |
A |
forward current |
|
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Inv. diode direct current, pulsed |
ISM |
|
- |
- |
168 |
|
Inverse diode forward voltage |
VSD |
VGS=0V, IF=42A |
- |
0.95 |
1.25 |
V |
Reverse recovery time |
trr |
VR=-V, IF=lS, |
- |
24 |
31 |
ns |
Reverse recovery charge |
Qrr |
diF/dt=100A/µs |
- |
18 |
23 |
nC |
Page 3 |
2003-01-17 |