Technische Information / Technical Information
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Schneller Thyristor |
T 600 F 12...13 |
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Fast Thyristor |
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Elektrische Eigenschaften / Electrical properties |
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Höchstzulässige Werte / Maximum rated values |
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Periodische Vorwärtsund Rückwärts-Spitzensperrspannung |
Tvj = - 40°C...Tvj max |
VDRM , VRRM |
1200 |
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V |
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repetitive peak forward off-state and reverse voltages |
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1300 |
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V |
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Vorwärts-Stoßspitzensperrspannung |
Tvj = - 40°C...Tvj max |
VDSM |
1200 |
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V |
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non-repetitive peak foward off-state voltage |
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1300 |
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V |
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Rückwärts-Stoßspitzensperrspannung |
Tvj = + 25°C...Tvj max |
VRSM |
1300 |
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V |
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non-repetitive peak reverse voltage |
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1400 |
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V |
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Durchlaßstrom-Grenzeffektivwert |
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ITRSMSM |
1500 |
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A |
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RMSM on-state current |
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Dauergrenzstrom |
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TC = 85 °C |
ITAVM |
600 |
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A |
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average on-state current |
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TC = 47 °C |
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960 |
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A |
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Stoßstrom-Grenzwert |
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Tvj = 25°C, tp = 10 ms |
ITSM |
11.300 |
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A |
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surge current |
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Tvj = Tvj max, tp = 10 ms |
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10.000 |
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A |
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Grenzlastintegral |
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Tvj = 25°C, tp = 10ms |
I²t |
638 |
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A²s*103 |
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I²t-value |
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Tvj = Tvj max, tp = 10ms |
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500 |
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A²s*103 |
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Kritische Stromsteilheit |
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DIN IEC 747-6 |
(diT/dt)cr |
200 |
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A/µs |
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critical rate of rise of on-state current |
f=50 Hz, iGM = 1 A |
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diG/dt = 1 A/µs |
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Kritische Spannungssteilheit |
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Tvj = Tvj max, vD = 0,67 VDRM |
(dvD/dt)cr |
1) |
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2) |
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critical rate of rise of off-state voltage |
5. Kennbuchstabe / 5th letter B |
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50 |
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50 |
V/µs |
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5. Kennbuchstabe / 5th letter C |
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500 |
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500 |
V/µs |
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5. Kennbuchstabe / 5th letter L |
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500 |
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50 |
V/µs |
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5. Kennbuchstabe / 5th letter M |
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1000 |
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500 |
V/µs |
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Charakteristische Werte / Characteristic values |
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Durchlaßspannung |
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Tvj = Tvj max, iT = 1000 A |
vT |
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max. 1,66 |
V |
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on-state voltage |
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Schleusenspannung |
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Tvj = Tvj max |
VT(TO) |
1,15 |
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V |
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threshold voltage |
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Ersatzwiderstand |
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Tvj = Tvj max |
rT |
0,42 |
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mΩ |
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slope resistance |
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Zündstrom |
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Tvj = 25°C, vD =12 V |
IGT |
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max. 250 |
mA |
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gate trigger current |
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Zündspannung |
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Tvj = 25°C, vD = 12V |
VGT |
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max. 2,2 |
V |
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gate trigger voltage |
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Nicht zündener Steuerstrom |
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Tvj = Tvj max, vD = 12 V |
IGD |
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max. 10 |
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mA |
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gate non-trigger current |
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Tvj = Tvj max,vD = 0,5 VDRM |
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max. 5 |
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mA |
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Nicht zündene Steuerspannung |
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Tvj = Tvj max,vD = 0,5 VDRM |
VGD |
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max. 0,25 |
V |
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gate non-trigger voltage |
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Haltestrom |
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Tvj = 25°C, vD = 12 V, RA = 10 Ω |
IH |
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max. 250 |
mA |
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holding current |
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Einraststrom |
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Tvj = 25°C, vD = 12 V, RGK>= 10 Ω |
IL |
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max. 1000 |
mA |
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latching current |
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iGM = 1 A, diG/dt = 1 A/µs |
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tg = 20 µs |
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Vorwärtsund Rückwärts-Sperrstrom |
Tvj = Tvj max |
iD, iR |
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max. 100 |
mA |
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forward off-state and reverse currents |
vD = VDRM, vR = VRRM |
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Zündverzug |
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DIN IEC 747-6 |
tgd |
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max. 1,5 |
µs |
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gate controlled delay time |
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Tvj = 25°C |
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iGM = 1 A, diG/dt = 1 A/µs |
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1)Werte nach DIN IEC 747-6 (ohne vorausgehende Kommutierung). / Values to DIN IEC 747-6 (without prior commutation).
2)Unmittelbar nach der Freiwerdezeit, vgl. Meßbedingungen für tq ./ Immediately after circuit commutated turn-off-time, see parameters tq.
SZ-M / 12.10.98 , K.-A. Rüther |
A 117 / 98 |
Seite/page 1 |
Technische Information / Technical Information
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Schneller Thyristor |
T 600 F 12...13 |
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F |
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Fast Thyristor |
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Elektrische Eigenschaften / Electrical properties |
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Charakteristische Werte / Characteristic values |
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Freiwerdezeit |
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Tvj = Tvj max, iTM=ITAVM |
tq |
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circuit commutatet turn-off time |
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vRM =100V, vDM = 0,67 VDRM |
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dvD/dt = siehe 5. Kennbuchstabe |
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-diT/dt = 20 A/µs |
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4. Kennbuchstabe |
K |
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max. 40 |
µs |
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4. Kennbuchstabe |
G |
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max. 30 |
µs |
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4. Kennbuchstabe |
F |
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max. 25 |
µs |
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4. Kennbuchstabe |
E |
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max. 20 |
µs |
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Thermische Eigenschaften / Thermal properties |
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Innerer Wärmewiderstand |
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Kühlfläche / cooling surface |
RthJC |
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thermal resitance, junction to case |
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beidseitig / two-sided, θ=180°sin |
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max. 0,038 |
°C/W |
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beidseitig / two-sided, DC |
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max. 0,036 |
°C/W |
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Anode / anode, θ=180°sin |
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max. 0,0675 |
°C/W |
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Anode / anode, DC |
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max. 0,065 |
°C/W |
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Kathode / cathode, θ=180°sin |
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max. 0,082 |
°C/W |
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Kathode / cathode, DC |
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max. 0,080 |
°C/W |
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ÜbergangsWärmewiderstand |
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Kühlfläche / cooling surface |
RthJK |
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thermal resitance, case to heatsink |
beidseitig / two-sided |
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max. 0,005 |
°C/W |
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einseitig / single-sided |
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max. 0,010 |
°C/W |
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Höchstzulässige Sperrschichttemperatur |
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Tvj max |
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125 |
°C |
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max. junction temperature |
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Betriebstemperatur |
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Tc op |
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-40...125 |
°C |
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operating temperature |
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Lagertemperatur |
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Tstg |
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-40...150 |
°C |
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storage temperature |
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Mechanische Eigenschaften / Mechanical properties |
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Gehäuse, siehe Anlage |
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Seite 3 |
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case, see appendix |
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page 3 |
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Si-Element mit Druckkontakt, Amplifying-Gate |
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Si-pellet with pressure contact, amplifying gate |
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Anpreßkraft |
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F |
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9...18 |
kN |
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clamping force |
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Gewicht |
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G |
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typ. 250 |
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weight |
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Kriechstrecke |
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30 |
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creepage distance |
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Feuchteklasse |
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DIN 40040 |
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C |
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humidity classification |
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Schwingfestigkeit |
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f = 50Hz |
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50 |
m/s² |
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vibration resistance |
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Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt
in Verbindung mit den zugehörigen Technischen Erläuterungen./ The technical Information specifies semiconductors devices but promises no characteristics. It is valid in combination with the belonging technical notes.
SZ-M / 12.10.98, K.-A. Rüther |
A 117 / 98 |
Seite/page 2 |
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