Infineon BSM100GB120DN2 Data Sheet

BSM 100 GB 120 DN2

IGBT Power Module

• Half-bridge

• Including fast free-wheeling diodes

• Package with insulated metal base plate

Type	VCE	IC	Package				Ordering Code
BSM 100 GB 120 DN2	1200V	150A	HALF-BRIDGE 2				C67076-A2107-A70
Maximum Ratings
Parameter				Symbol			Values		Unit
Collector-emitter voltage				VCE		1200			V
Collector-gate voltage				VCGR
RGE = 20 kΩ						1200
Gate-emitter voltage				VGE		± 20
DC collector current				IC					A
TC = 25 °C						150
TC = 80 °C						100
Pulsed collector current, tp = 1 ms				ICpuls
TC = 25 °C						300
TC = 80 °C						200
Power dissipation per IGBT				Ptot					W
TC = 25 °C						800
Chip temperature				Tj		+ 150			°C
Storage temperature				Tstg		-40 ... + 125
Thermal resistance, chip case				RthJC			≤ 0.16		K/W
Diode thermal resistance, chip case				RthJCD			≤ 0.3
Insulation test voltage, t = 1min.				Vis		2500			Vac
Creepage distance				-		20			mm
Clearance				-		11
DIN humidity category, DIN 40 040				-			F		sec
IEC climatic category, DIN IEC 68-1				-		40 / 125 / 56

1	Oct-21-1997

BSM 100 GB 120 DN2

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter	Symbol		Values		Unit
		min.	typ.	max.
Static Characteristics
Gate threshold voltage	VGE(th)				V
VGE = VCE, IC = 4 mA		4.5	5.5	6.5
Collector-emitter saturation voltage	VCE(sat)
VGE = 15 V, IC = 100 A, Tj = 25 °C		-	2.5	3
VGE = 15 V, IC = 100 A, Tj = 125 °C		-	3.1	3.7
Zero gate voltage collector current	ICES				mA
VCE = 1200 V, VGE = 0 V, Tj = 25 °C		-	1.5	2
VCE = 1200 V, VGE = 0 V, Tj = 125 °C		-	6	-
Gate-emitter leakage current	IGES				nA
VGE = 20 V, VCE = 0 V		-	-	200
AC Characteristics
Transconductance	gfs				S
VCE = 20 V, IC = 100 A		54	-	-
Input capacitance	Ciss				nF
VCE = 25 V, VGE = 0 V, f = 1 MHz		-	6.5	-
Output capacitance	Coss
VCE = 25 V, VGE = 0 V, f = 1 MHz		-	1	-
Reverse transfer capacitance	Crss
VCE = 25 V, VGE = 0 V, f = 1 MHz		-	0.5	-

2	Oct-21-1997

BSM 100 GB 120 DN2

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter	Symbol		Values		Unit
		min.	typ.	max.
Switching Characteristics, Inductive Load at Tj = 125 °C
Turn-on delay time	td(on)				ns
VCC = 600 V, VGE = 15 V, IC = 100 A
RGon = 6.8 Ω		-	130	260
Rise time	tr
VCC = 600 V, VGE = 15 V, IC = 100 A
RGon = 6.8 Ω		-	80	160
Turn-off delay time	td(off)
VCC = 600 V, VGE = -15 V, IC = 100 A
RGoff = 6.8 Ω		-	400	600
Fall time	tf
VCC = 600 V, VGE = -15 V, IC = 100 A
RGoff = 6.8 Ω		-	70	100
Free-Wheel Diode
Diode forward voltage	VF				V
IF = 100 A, VGE = 0 V, Tj = 25 °C		-	2.3	2.8
IF = 100 A, VGE = 0 V, Tj = 125 °C		-	1.8	-
Reverse recovery time	trr				µs
IF = 100 A, VR = -600 V, VGE = 0 V
diF/dt = -1000 A/µs, Tj = 25 °C		-	0.3	-
Reverse recovery charge	Qrr				µC
IF = 100 A, VR = -600 V, VGE = 0 V
diF/dt = -1000 A/µs
Tj = 25 °C		-	4	-
Tj = 125 °C		-	12	-

3	Oct-21-1997

BSM 100 GB 120 DN2
Power dissipation										Safe operating area
Ptot = ¦(TC)										IC = ¦(VCE)
parameter: Tj			£ 150 °C							parameter: D = 0, TC = 25°C , Tj				£ 150 °C
	900										10 3
	W										A			tp = 14.0µs
Ptot	700									IC	10 2
	600													100 µs
	500										10 1
														1 ms
	400
	300													10 ms
	200										10 0
														DC
	100
	0										10 -1	10 1	10 2	10 3
	0	20	40	60	80	100	120	°C	160		10 0				V
								TC						VCE

Collector current								Transient thermal impedance					IGBT
IC = ¦(TC)								Zth JC = ¦(tp)
parameter: VGE ³ 15 V , Tj £ 150 °C								parameter: D = tp / T
160									10 0
A									K/W
IC								ZthJC	10 -1
120
100
80									10 -2
													D = 0.50
60													0.20
													0.10
40									10 -3				0.05
													0.02
										single pulse
													0.01
20
0									10 -4	10 -4	10 -3	10 -2	10 -1	s 10 0
0	20	40	60	80	100 120	°C	160		10 -5
						TC							tp
							4						Oct-21-1997