Infineon BSM400GA120DN2 Data Sheet

BSM 400 GA 120 DN2

IGBT Power Module

• Single switch

• Including fast free-wheeling diodes

• Package with insulated metal base plate

Type	VCE	IC	Package	Ordering Code
BSM 400 GA 120 DN2	1200V	550A	SINGLE SWITCH	C67070-A2302-A70
BSM 400 GA 120 DN2 S	1200V	550A	SSW SENSE 1	C67070-A2308-A70

Maximum Ratings

Parameter	Symbol	Values	Unit
Collector-emitter voltage	VCE	1200	V
Collector-gate voltage	VCGR
RGE = 20 kΩ		1200
Gate-emitter voltage	VGE	± 20
DC collector current	IC		A
TC = 25 °C		550
TC = 80 °C		400
Pulsed collector current, tp = 1 ms	ICpuls
TC = 25 °C		1100
TC = 125 °C		800
Power dissipation per IGBT	Ptot		W
TC = 25 °C		2700
Chip temperature	Tj	+ 150	°C
Storage temperature	Tstg	-40 ... + 125
Thermal resistance, chip case	RthJC	≤ 0.045	K/W
Diode thermal resistance, chip case	RthJCD	≤ 0.09
Insulation test voltage, t = 1min.	Vis	2500	Vac
Creepage distance	-	20	mm
Clearance	-	11
DIN humidity category, DIN 40 040	-	F	sec
IEC climatic category, DIN IEC 68-1	-	40 / 125 / 56

1	Oct-30-1997

BSM 400 GA 120 DN2

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter	Symbol		Values		Unit
		min.	typ.	max.
Static Characteristics
Gate threshold voltage	VGE(th)				V
VGE = VCE, IC = 16 mA		4.5	5.5	6.5
Collector-emitter saturation voltage	VCE(sat)
VGE = 15 V, IC = 400 A, Tj = 25 °C		-	2.5	3
VGE = 15 V, IC = 400 A, Tj = 125 °C		-	3.1	3.7
Zero gate voltage collector current	ICES				mA
VCE = 1200 V, VGE = 0 V, Tj = 25 °C		-	6	8
VCE = 1200 V, VGE = 0 V, Tj = 125 °C		-	24	-
Gate-emitter leakage current	IGES				nA
VGE = 20 V, VCE = 0 V		-	-	400
AC Characteristics
Transconductance	gfs				S
VCE = 20 V, IC = 400 A		216	-	-
Input capacitance	Ciss				nF
VCE = 25 V, VGE = 0 V, f = 1 MHz		-	26	-
Output capacitance	Coss
VCE = 25 V, VGE = 0 V, f = 1 MHz		-	4	-
Reverse transfer capacitance	Crss
VCE = 25 V, VGE = 0 V, f = 1 MHz		-	2	-

2	Oct-30-1997

BSM 400 GA 120 DN2

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter	Symbol		Values		Unit
		min.	typ.	max.
Switching Characteristics, Inductive Load at Tj = 125 °C
Turn-on delay time	td(on)				ns
VCC = 600 V, VGE = 15 V, IC = 400 A
RGon = 2.7 Ω		-	100	200
Rise time	tr
VCC = 600 V, VGE = 15 V, IC = 400 A
RGon = 2.7 Ω		-	110	220
Turn-off delay time	td(off)
VCC = 600 V, VGE = -15 V, IC = 400 A
RGoff = 2.7 Ω		-	550	800
Fall time	tf
VCC = 600 V, VGE = -15 V, IC = 400 A
RGoff = 2.7 Ω		-	80	120
Free-Wheel Diode
Diode forward voltage	VF				V
IF = 400 A, VGE = 0 V, Tj = 25 °C		-	2.3	2.8
IF = 400 A, VGE = 0 V, Tj = 125 °C		-	1.8	-
Reverse recovery time	trr				µs
IF = 400 A, VR = -600 V, VGE = 0 V
diF/dt = -3000 A/µs, Tj = 125 °C		-	0.6	-
Reverse recovery charge	Qrr				µC
IF = 400 A, VR = -600 V, VGE = 0 V
diF/dt = -3000 A/µs
Tj = 25 °C		-	16	-
Tj = 125 °C		-	45	-

3	Oct-30-1997

BSM 400 GA 120 DN2
Power dissipation										Safe operating area
Ptot = ¦(TC)										IC = ¦(VCE)
parameter: Tj			£ 150 °C							parameter: D = 0, TC = 25°C , Tj				£ 150 °C
	2800										10 4
	W										A
	2400
Ptot	2200									IC	10 3			tp = 26.0µs
	2000
	1800													100 µs
	1600
	1400										10 2
	1200													1 ms
	1000
	800										10 1
														10 ms
	600
	400
	200													DC
	0										10 0	10 1	10 2	10 3
	0	20	40	60	80	100	120	°C	160		10 0				V
								TC						VCE

Collector current								Transient thermal impedance				IGBT
IC = ¦(TC)								Zth JC = ¦(tp)
parameter: VGE ³ 15 V , Tj £ 150 °C								parameter: D = tp / T
600								10 0
A								K/W
500								10 -1
IC
								ZthJC
450
400
350								10 -2
300												D = 0.50
250								10 -3				0.20
200												0.10
150												0.05
								10 -4				0.02
									single pulse
100												0.01
50
0								10 -5	10 -4	10 -3	10 -2	10 -1	s 10 0
0	20	40	60	80	100 120	°C	160	10 -5
						TC						tp
							4					Oct-30-1997