Technische Information / Technical Information
IGBT-Module |
BSM10GP120 |
IGBT-Modules |
Elektrische Eigenschaften / Electrical properties
Höchstzulässige Werte / Maximum rated values
Diode Gleichrichter/ Diode Rectifier
Periodische Rückw. Spitzensperrspannung repetitive peak reverse voltage
Durchlaßstrom Grenzeffektivwert RMS forward current per chip
Dauergleichstrom
DC forward current
Stoßstrom Grenzwert
surge forward current
Grenzlastintegral
I2t - value
TC = 80°C |
|
|
tP = 10 ms, |
Tvj = |
25°C |
tP = 10 ms, |
Tvj = 150°C |
|
tP = 10 ms, |
Tvj = |
25°C |
tP = 10 ms, |
Tvj = 150°C |
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Transistor Wechselrichter/ Transistor Inverter |
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Kollektor-Emitter-Sperrspannung |
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collector-emitter voltage |
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Kollektor-Dauergleichstrom |
Tc = 80 °C |
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DC-collector current |
TC = 25 °C |
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Periodischer Kollektor Spitzenstrom |
tP = 1 ms, |
T C = 80 °C |
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repetitive peak collector current |
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Gesamt-Verlustleistung |
TC = 25°C |
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total power dissipation |
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Gate-Emitter-Spitzenspannung |
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gate-emitter peak voltage |
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Diode Wechselrichter/ Diode Inverter |
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Dauergleichstrom |
Tc = 80 °C |
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DC forward current |
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Periodischer Spitzenstrom |
tP = 1 ms |
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repetitive peak forw. current |
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Grenzlastintegral |
VR = 0V, tp = 10ms, Tvj = 125°C |
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I2t - value |
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Transistor Brems-Chopper/ Transistor Brake-Chopper |
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Kollektor-Emitter-Sperrspannung |
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collector-emitter voltage |
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Kollektor-Dauergleichstrom |
TC = 80 °C |
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DC-collector current |
TC = 25 °C |
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Periodischer Kollektor Spitzenstrom |
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repetitive peak collector current |
tP = 1 ms, TC = 80°C |
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Gesamt-Verlustleistung |
TC = 25°C |
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total power dissipation |
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Gate-Emitter-Spitzenspannung |
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gate-emitter peak voltage |
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Diode Brems-Chopper/ Diode Brake-Chopper |
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Dauergleichstrom |
Tc = 80 °C |
||
DC forward current |
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Periodischer Spitzenstrom |
tP |
= 1 ms |
|
repetitive peak forw. current |
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VRRM |
1600 |
V |
IFRMSM |
40 |
A |
Id |
10 |
A |
IFSM |
300 |
A |
|
230 |
A |
I2t |
450 |
A2s |
|
260 |
A2s |
VCES |
1200 |
V |
IC,nom. |
10 |
A |
IC |
20 |
A |
ICRM |
20 |
A |
Ptot |
100 |
W |
VGES |
+/- 20V |
V |
IF |
10 |
A |
IFRM |
20 |
A |
I2t |
18 |
A2s |
VCES |
1200 |
V |
IC,nom. |
10 |
A |
IC |
20 |
A |
ICRM |
20 |
A |
Ptot |
100 |
W |
VGES |
+/- 20V |
V |
IF |
10 |
A |
IFRM |
20 |
A |
prepared by: Andreas Schulz |
date of publication:17.09.1999 |
approved by: M.Hierholzer |
revision: 5 |
1(11)
DB-PIM-9.xls
Technische Information / Technical Information
IGBT-Module |
BSM10GP120 |
IGBT-Modules |
Modul Isolation/ Module Isolation |
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Isolations-Prüfspannung |
RMS, f = 50 Hz, t = 1 min. |
VISOL |
2,5 |
kV |
|
insulation test voltage |
NTC connected to Baseplate |
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Elektrische Eigenschaften / Electrical properties
Charakteristische Werte / Characteristic values
Diode Gleichrichter/ Diode Rectifier |
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Durchlaßspannung |
Tvj = 150°C, |
I F = |
10 A |
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forward voltage |
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Schleusenspannung |
Tvj = 150°C |
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threshold voltage |
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Ersatzwiderstand |
Tvj = 150°C |
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slope resistance |
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Sperrstrom |
Tvj = 150°C, |
V R = |
1600 V |
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reverse current |
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Modul Leitungswiderstand, Anschlüsse-Chip |
TC = 25°C |
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lead resistance, terminals-chip |
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Transistor Wechselrichter/ Transistor Inverter
Kollektor-Emitter Sättigungsspannung collector-emitter saturation voltage
Gate-Schwellenspannung gate threshold voltage
Eingangskapazität input capacitance
Kollektor-Emitter Reststrom collector-emitter cut-off current
Gate-Emitter Reststrom gate-emitter leakage current
Einschaltverzögerungszeit (ind. Last) turn on delay time (inductive load)
Anstiegszeit (induktive Last) rise time (inductive load)
Abschaltverzögerungszeit (ind. Last) turn off delay time (inductive load)
Fallzeit (induktive Last) fall time (inductive load)
Einschaltverlustenergie pro Puls turn-on energy loss per pulse
Abschaltverlustenergie pro Puls turn-off energy loss per pulse
Kurzschlußverhalten
SC Data
VGE = 15V, |
Tvj = |
25°C, |
I C = |
10 A |
|
VGE = 15V, |
Tvj = |
125°C, |
I C = |
10 A |
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VCE = VGE, |
Tvj = 25°C, |
I C = |
0,35 mA |
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f = 1MHz, Tvj = 25°C |
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VCE = 25 V, VGE = 0 V |
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VGE = 0V, |
Tvj = 25°C, |
V CE = |
1200 V |
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VGE = 0V, |
Tvj =125°C, |
V CE = |
1200 V |
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VCE = 0V, VGE =20V, Tvj =25°C |
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IC = INenn, |
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VCC = |
600 |
V |
VGE = ±15V, Tvj = |
25°C, R G = |
82 Ohm |
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VGE = ±15V, Tvj = |
125°C, R G = |
82 Ohm |
|||
IC = INenn, |
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VCC = |
600 |
V |
VGE = ±15V, Tvj = |
25°C, R G = |
82 Ohm |
|||
VGE = ±15V, Tvj = |
125°C, R G = |
82 Ohm |
|||
IC = INenn, |
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VCC = |
600 |
V |
VGE = ±15V, Tvj = |
25°C, R G = |
82 Ohm |
|||
VGE = ±15V, Tvj = |
125°C, R G = |
82 Ohm |
|||
IC = INenn, |
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VCC = |
600 |
V |
VGE = ±15V, Tvj = |
25°C, R G = |
82 Ohm |
|||
VGE = ±15V, Tvj = |
125°C, R G = |
82 Ohm |
|||
IC = INenn, |
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VCC = |
600 |
V |
VGE = ±15V, Tvj = 125°C, R G = |
82 Ohm |
||||
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|
|
L S = |
75 nH |
|
IC = INenn, |
|
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VCC = |
600 |
V |
VGE = ±15V, Tvj = 125°C, R G = |
82 Ohm |
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|
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L S = |
75 nH |
|
tP ≤ 10µs, |
VGE ≤ 15V, |
RG = |
82 Ohm |
||
Tvj≤125°C, |
|
|
V CC = |
720 |
V |
|
|
|
dI/dt = |
800 |
A/µs |
|
min. |
typ. |
max. |
|
VF |
- |
0,9 |
0,95 |
V |
V (TO) |
- |
- |
0,8 |
V |
r T |
- |
- |
10,5 |
mΩ |
IR |
- |
2 |
- |
mA |
R AA’+CC’ |
- |
8 |
- |
mΩ |
|
min. |
typ. |
max. |
|
VCE sat |
- |
2,4 |
2,85 |
V |
|
- |
2,75 |
- |
V |
VGE(TO) |
4,5 |
5,5 |
6,5 |
V |
Cies |
- |
0,6 |
- |
nF |
ICES |
- |
0,5 |
500 |
µA |
|
- |
0,8 |
- |
mA |
I GES |
- |
- |
300 |
nA |
td,on |
- |
40 |
- |
ns |
|
- |
45 |
- |
ns |
tr |
- |
45 |
- |
ns |
|
- |
40 |
- |
ns |
td,off |
- |
255 |
- |
ns |
|
- |
285 |
- |
ns |
tf |
- |
40 |
- |
ns |
|
- |
60 |
- |
ns |
Eon |
- |
1,2 |
- |
mWs |
Eoff |
- |
1,1 |
- |
mWs |
ISC |
- |
45 |
- |
A |
2(11)
DB-PIM-9.xls
Technische Information / Technical Information
IGBT-Module |
BSM10GP120 |
IGBT-Modules |
Elektrische Eigenschaften / Electrical properties
Charakteristische Werte / Characteristic values
Modulinduktivität |
|
|
stray inductance module |
|
|
Modul Leitungswiderstand, Anschlüsse-Chip |
TC = 25°C |
|
lead resistance, terminals-chip |
||
|
Diode Wechselrichter/ Diode Inverter
Durchlaßspannung forward voltage
Rückstromspitze
peak reverse recovery current
Sperrverzögerungsladung recovered charge
Abschaltenergie pro Puls reverse recovery energy
VGE = 0V, Tvj = |
25°C, |
I F = |
10 A |
VGE = 0V, Tvj = 125°C, |
I F = |
10 A |
|
IF=INenn, |
- diF/dt = |
400A/µs |
|
VGE = -10V, Tvj = |
25°C, V R = |
600 V |
|
VGE = -10V, Tvj = 125°C, V R = |
600 V |
||
IF=INenn, |
- diF/dt = |
400A/µs |
|
VGE = -10V, Tvj = |
25°C, V R = |
600 V |
|
VGE = -10V, Tvj = 125°C, V R = |
600 V |
||
IF=INenn, |
- diF/dt = |
400A/µs |
|
VGE = -10V, Tvj = |
25°C, V R = |
600 V |
|
VGE = -10V, Tvj = 125°C, V R = |
600 V |
||
Transistor Brems-Chopper/ Transistor Brake-Chopper |
|
|
|||
Kollektor-Emitter Sättigungsspannung |
VGE = 15V, |
Tvj = 25°C, |
I C = |
10,0 A |
|
collector-emitter saturation voltage |
VGE = 15V, |
Tvj = 125°C, |
I C = |
10,0 A |
|
Gate-Schwellenspannung |
VCE = VGE, |
Tvj = 25°C, |
I C = |
0,35mA |
|
gate threshold voltage |
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Eingangskapazität |
f = 1MHz, Tvj = 25°C |
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input capacitance |
VCE = 25 V, VGE = 0 V |
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Kollektor-Emitter Reststrom |
VGE = 0V, |
Tvj = 25°C, |
V CE = |
1200 V |
|
collector-emitter cut-off current |
VGE = 0V, Tvj = 125°C, |
V CE = |
1200 V |
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Gate-Emitter Reststrom |
VCE = 0V, VGE = 20V, Tvj = 25°C |
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|||
gate-emitter leakage current |
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Diode Brems-Chopper/ Diode Brake-Chopper |
|
|
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Durchlaßspannung |
Tvj = 25°C, |
I F = |
10,0 A |
||
forward voltage |
Tvj = 125°C, |
I F = |
10,0 A |
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NTC-Widerstand/ NTC-Thermistor |
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Nennwiderstand |
TC = 25°C |
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rated resistance |
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Abweichung von R100 |
TC = 100°C, R 100 = 493 Ω |
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deviation of R100 |
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Verlustleistung |
TC |
= 25°C |
|
power dissipation |
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B-Wert |
R2 |
= R1 exp [B(1/T2 - 1/T1)] |
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B-value |
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|
min. |
typ. |
max. |
|
LσCE |
- |
- |
100 |
nH |
R CC’+EE’ |
- |
11 |
- |
mΩ |
|
min. |
typ. |
max. |
|
VF |
- |
2,2 |
2,55 |
V |
|
- |
2,1 |
- |
V |
IRM |
- |
11 |
- |
A |
|
- |
13 |
- |
A |
Qr |
- |
0,84 |
- |
µAs |
|
- |
1,5 |
- |
µAs |
ERQ |
- |
0,3 |
- |
mWs |
|
- |
0,54 |
- |
mWs |
|
min. |
typ. |
max. |
|
VCE sat |
- |
2,4 |
2,85 |
V |
|
- |
2,75 |
- |
V |
VGE(TO) |
4,5 |
5,5 |
6,5 |
V |
Cies |
- |
0,6 |
- |
nF |
ICES |
- |
0,5 |
500 |
µA |
|
- |
0,8 |
- |
mA |
I GES |
- |
- |
300 |
nA |
|
min. |
typ. |
max. |
|
VF |
- |
2,2 |
2,55 |
V |
|
- |
2,1 |
- |
V |
|
min. |
typ. |
max. |
|
R 25 |
- |
5 |
- |
kΩ |
R/R |
-5 |
|
5 |
% |
P 25 |
|
|
20 |
mW |
B25/50 |
|
3375 |
|
K |
3(11)
DB-PIM-9.xls
Technische Information / Technical Information
IGBT-Module |
BSM10GP120 |
IGBT-Modules |
Thermische Eigenschaften / Thermal properties
|
|
|
min. |
typ. |
max. |
|
Innerer Wärmewiderstand |
Gleichr. Diode/ Rectif. Diode |
RthJC |
- |
- |
1 |
K/W |
thermal resistance, junction to case |
Trans. Wechsr./ Trans. Inverter |
|
- |
- |
1,2 |
K/W |
|
Diode Wechsr./ Diode Inverter |
|
- |
- |
2,3 |
K/W |
|
Trans. Bremse/ Trans. Brake |
|
- |
- |
1,2 |
K/W |
|
Diode Bremse/ Diode Brake |
|
- |
- |
2,3 |
K/W |
Übergangs-Wärmewiderstand |
Gleichr. Diode/ Rectif. Diode |
λPaste=1W/m*K RthCK |
- |
0,08 |
- |
K/W |
thermal resistance, case to heatsink |
Trans. Wechsr./ Trans. Inverter |
λgrease=1W/m*K |
- |
0,04 |
- |
K/W |
|
Diode Wechsr./ Diode Inverter |
|
- |
0,08 |
- |
K/W |
Höchstzulässige Sperrschichttemperatur |
|
Tvj |
- |
- |
150 |
°C |
maximum junction temperature |
|
|||||
|
|
|
|
|
|
|
Betriebstemperatur |
|
Top |
-40 |
- |
125 |
°C |
operation temperature |
|
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|
|
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|
Lagertemperatur |
|
Tstg |
-40 |
- |
125 |
°C |
storage temperature |
|
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Mechanische Eigenschaften / Mechanical properties |
|
|
|
|
Innere Isolation |
|
Al2O3 |
|
|
internal insulation |
|
|
||
|
|
|
||
CTI |
|
225 |
|
|
comperative tracking index |
|
|
||
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Anzugsdrehmoment f. mech. Befestigung |
M |
3 |
Nm |
|
mounting torque |
|
±10% |
|
|
Gewicht |
G |
180 |
g |
|
weight |
||||
|
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|
4(11)
DB-PIM-9.xls
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