Technische Information / Technical Information
IGBT-Modul FF1200R17KP4_B2
IGBT-Module
IHM-A Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled 3 Diode
IHM-A module with Trench/Fieldstop IGBT4 and Emitter Controlled 3 diode
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VCES = 1700V |
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IC nom = 1200A / ICRM = 2400A |
Typische Anwendungen |
Typical Applications |
• Hochleistungsumrichter |
• High Power Converters |
• Mittelspannungsantriebe |
• Medium Voltage Converters |
• Motorantriebe |
• Motor Drives |
• Traktionsumrichter |
• Traction Drives |
• Windgeneratoren |
• Wind Turbines |
Elektrische Eigenschaften |
Electrical Features |
• Erweiterte Sperrschichttemperatur Tvj op |
• Extended Operation Temperature Tvj op |
• Niedriges VCEsat |
• Low VCEsat |
• Tvj op = 150°C |
• Tvj op = 150°C |
• Verstärkte Diode für Rückspeisebetrieb |
• Enlarged Diode for regenerative operation |
Mechanische Eigenschaften |
Mechanical Features |
• 4 kV AC 1min Isolationsfestigkeit |
• 4 kV AC 1min Insulation |
• AlSiC Bodenplatte für erhöhte thermische |
• AlSiC Base Plate for increased Thermal Cycling |
Lastwechselfestigkeit |
Capability |
• Hohe Lastund thermische Wechselfestigkeit |
• High Power and Thermal Cycling Capability |
• Hohe Leistungsdichte |
• High Power Density |
• Standardgehäuse |
• Standard Housing |
Module Label Code
Barcode Code 128 |
Content of the Code |
Digit |
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Module Serial Number |
1 - 5 |
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Module Material Number |
6 - 11 |
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DMX-Code |
Production Order Number |
12 - 19 |
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Datecode (Production Year) |
20 - 21 |
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Datecode (Production Week) |
22 - 23 |
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prepared by: WB |
date of publication: 2014-11-20 |
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approved by: JM |
revision: 3.0 |
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Technische Information / Technical Information
IGBT-Modul FF1200R17KP4_B2
IGBT-Module
IGBT,Wechselrichter / IGBT,Inverter
Höchstzulässige Werte / Maximum Rated Values
Kollektor-Emitter-Sperrspannung |
Tvj = 25°C |
VCES |
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1700 |
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V |
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Collector-emitter voltage |
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Kollektor-Dauergleichstrom |
TC = 80°C, Tvj max = 150°C |
IC nom |
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1200 |
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A |
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Continuous DC collector current |
TC = 25°C, Tvj max = 150°C |
IC |
1700 |
A |
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Periodischer Kollektor-Spitzenstrom |
tP = 1 ms |
ICRM |
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2400 |
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A |
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Repetitive peak collector current |
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Gesamt-Verlustleistung |
TC = 25°C, Tvj max = 150°C |
Ptot |
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6,25 |
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kW |
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Total power dissipation |
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Gate-Emitter-Spitzenspannung |
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VGES |
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+/-20 |
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V |
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Gate-emitter peak voltage |
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Charakteristische Werte / Characteristic Values |
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min. |
typ. |
max. |
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Kollektor-Emitter-Sättigungsspannung |
IC = 1200 A, VGE = 15 V |
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Tvj = 25°C |
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1,90 |
2,20 |
V |
Collector-emitter saturation voltage |
IC = 1200 A, VGE = 15 V |
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Tvj = 125°C |
VCE sat |
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2,30 |
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V |
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IC = 1200 A, VGE = 15 V |
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Tvj = 150°C |
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2,40 |
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V |
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Gate-Schwellenspannung |
IC = 48,0 mA, VCE = VGE, Tvj = 25°C |
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VGEth |
5,20 |
5,80 |
6,40 |
V |
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Gate threshold voltage |
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Gateladung |
VGE = -15 V ... +15 V |
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QG |
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12,5 |
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µC |
Gate charge |
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Interner Gatewiderstand |
Tvj = 25°C |
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RGint |
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1,6 |
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Ω |
Internal gate resistor |
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Eingangskapazität |
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V |
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Cies |
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98,0 |
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nF |
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Input capacitance |
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Rückwirkungskapazität |
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V |
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Cres |
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3,15 |
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nF |
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Reverse transfer capacitance |
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Kollektor-Emitter-Reststrom |
VCE = 1700 V, VGE = 0 V, Tvj = 25°C |
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ICES |
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5,0 |
mA |
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Collector-emitter cut-off current |
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Gate-Emitter-Reststrom |
VCE = 0 V, VGE = 20 V, Tvj = 25°C |
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IGES |
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400 |
nA |
Gate-emitter leakage current |
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Einschaltverzögerungszeit, induktive Last |
IC = 1200 A, VCE = 900 V |
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Tvj = 25°C |
td on |
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0,80 |
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µs |
Turn-on delay time, inductive load |
VGE = ±15 V |
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Tvj = 125°C |
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0,85 |
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µs |
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RGon = 0,68 Ω |
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Tvj = 150°C |
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0,86 |
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µs |
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Anstiegszeit, induktive Last |
IC = 1200 A, VCE = 900 V |
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Tvj = 25°C |
tr |
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0,19 |
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µs |
Rise time, inductive load |
VGE = ±15 V |
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Tvj = 125°C |
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0,20 |
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µs |
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RGon = 0,68 Ω |
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Tvj = 150°C |
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0,20 |
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µs |
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Abschaltverzögerungszeit, induktive Last |
IC = 1200 A, VCE = 900 V |
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Tvj = 25°C |
td off |
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1,40 |
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µs |
Turn-off delay time, inductive load |
VGE = ±15 V |
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Tvj = 125°C |
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1,75 |
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µs |
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RGoff = 0,8 Ω |
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Tvj = 150°C |
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1,85 |
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µs |
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Fallzeit, induktive Last |
IC = 1200 A, VCE = 900 V |
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Tvj = 25°C |
tf |
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0,28 |
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µs |
Fall time, inductive load |
VGE = ±15 V |
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Tvj = 125°C |
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0,48 |
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µs |
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RGoff = 0,8 Ω |
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Tvj = 150°C |
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0,53 |
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µs |
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Einschaltverlustenergie pro Puls |
IC = 1200 A, VCE = 900 V, LS = 50 nH |
Tvj = 25°C |
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245 |
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mJ |
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Turn-on energy loss per pulse |
VGE = ±15 V |
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Tvj = 125°C |
Eon |
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370 |
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mJ |
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RGon = 0,68 Ω |
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Tvj = 150°C |
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415 |
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mJ |
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Abschaltverlustenergie pro Puls |
IC = 1200 A, VCE = 900 V, LS = 50 nH |
Tvj = 25°C |
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410 |
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mJ |
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Turn-off energy loss per pulse |
VGE = ±15 V |
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Tvj = 125°C |
Eoff |
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510 |
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mJ |
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RGoff = 0,8 Ω |
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Tvj = 150°C |
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535 |
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mJ |
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Kurzschlußverhalten |
VGE ≤ 15 V, VCC = 1000 V |
tP ≤ 10 µs, Tvj = 150°C |
ISC |
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SC data |
VCEmax = VCES -LsCE ·di/dt |
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4800 |
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A |
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Wärmewiderstand, Chip bis Gehäuse |
pro IGBT / per IGBT |
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RthJC |
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20,0 |
K/kW |
Thermal resistance, junction to case |
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Wärmewiderstand, Gehäuse bis Kühlkörper |
pro IGBT / per IGBT |
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RthCH |
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22,0 |
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K/kW |
Thermal resistance, case to heatsink |
λPaste = 1 W/(m·K) / λgrease = 1 W/(m·K) |
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Temperatur im Schaltbetrieb |
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Tvj op |
-40 |
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150 |
°C |
Temperature under switching conditions |
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prepared by: WB |
date of publication: 2014-11-20 |
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approved by: JM |
revision: 3.0 |
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2
Technische Information / Technical Information
IGBT-Modul FF1200R17KP4_B2
IGBT-Module
Diode, Wechselrichter / Diode, Inverter
Höchstzulässige Werte / Maximum Rated Values
Periodische Spitzensperrspannung |
Tvj = 25°C |
VRRM |
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1700 |
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V |
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Repetitive peak reverse voltage |
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Dauergleichstrom |
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IF |
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1200 |
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A |
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Continuous DC forward current |
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Periodischer Spitzenstrom |
tP = 1 ms |
IFRM |
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2400 |
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A |
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Repetitive peak forward current |
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Grenzlastintegral |
VR = 0 V, tP = 10 ms, Tvj = 125°C |
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240 |
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kA²s |
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I²t - value |
VR = 0 V, tP = 10 ms, Tvj = 150°C |
I²t |
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210 |
kA²s |
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Spitzenverlustleistung |
Tvj = 125°C |
PRQM |
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1400 |
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kW |
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Maximum power dissipation |
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Mindesteinschaltdauer |
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ton min |
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10,0 |
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µs |
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Minimum turn-on time |
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Charakteristische Werte / Characteristic Values |
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min. typ. |
max. |
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Durchlassspannung |
IF = 1200 A, VGE = 0 V |
Tvj = 25°C |
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1,65 |
2,10 |
V |
Forward voltage |
IF = 1200 A, VGE = 0 V |
Tvj = 125°C |
VF |
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1,65 |
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V |
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IF = 1200 A, VGE = 0 V |
Tvj = 150°C |
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1,65 |
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V |
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Rückstromspitze |
IF = 1200 A, - diF/dt = 6000 A/µs (Tvj=150°C) Tvj = 25°C |
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1100 |
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A |
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Peak reverse recovery current |
VR = 900 V |
Tvj = 125°C |
IRM |
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1300 |
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A |
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VGE = -15 V |
Tvj = 150°C |
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1350 |
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A |
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Sperrverzögerungsladung |
IF = 1200 A, - diF/dt = 6000 A/µs (Tvj=150°C) Tvj = 25°C |
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290 |
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µC |
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Recovered charge |
VR = 900 V |
Tvj = 125°C |
Qr |
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500 |
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µC |
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VGE = -15 V |
Tvj = 150°C |
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585 |
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µC |
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Abschaltenergie pro Puls |
IF = 1200 A, - diF/dt = 6000 A/µs (Tvj=150°C) Tvj = 25°C |
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190 |
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mJ |
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Reverse recovery energy |
VR = 900 V |
Tvj = 125°C |
Erec |
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330 |
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mJ |
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VGE = -15 V |
Tvj = 150°C |
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390 |
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mJ |
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Wärmewiderstand, Chip bis Gehäuse |
pro Diode / per diode |
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RthJC |
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32,0 |
K/kW |
Thermal resistance, junction to case |
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Wärmewiderstand, Gehäuse bis Kühlkörper |
pro Diode / per diode |
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RthCH |
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29,0 |
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K/kW |
Thermal resistance, case to heatsink |
λPaste = 1 W/(m·K) / λgrease = 1 W/(m·K) |
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Temperatur im Schaltbetrieb |
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Tvj op |
-40 |
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150 |
°C |
Temperature under switching conditions |
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prepared by: WB |
date of publication: 2014-11-20 |
approved by: JM |
revision: 3.0 |
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