INFINEON BAT64, BAT64-02V, BAT64-02W, BAT64-04, BAT64-04W User Manual
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BAT64-02V
BAT64...
Silicon Schottky Diodes
•For low-loss, fast-recovery, meter protection, bias isolation and clamping application
•Integrated diffused guard ring
•Low forward voltage
BAT64 |
BAT64-02V |
BAT64-04 |
BAT64-05 |
BAT64-06 |
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BAT64-02W |
BAT64-04W |
BAT64-05W |
BAT64-06W |
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BAT64-07 |
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ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type |
Package |
Configuration |
LS(nH) |
Marking |
BAT64 |
SOT23 |
single |
1.8 |
63s |
BAT64-02V* |
SC79 |
single |
0.6 |
t |
BAT64-02W |
SCD80 |
single |
0.6 |
64 |
BAT64-04 |
SOT 23 |
series |
1.8 |
64s |
BAT64-04W |
SOT323 |
series |
1.4 |
64s |
BAT64-05 |
SOT23 |
common cathode |
1.8 |
65s |
BAT64-05W |
SOT323 |
common cathode |
1.4 |
65s |
BAT64-06 |
SOT23 |
common anode |
1.8 |
66s |
BAT64-06W |
SOT323 |
common anode |
1.4 |
66s |
BAT64-07 |
SOT143 |
parallel pair |
2 |
67s |
* Preliminary data
1 |
Mar-10-2004 |
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BAT64... |
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Maximum Ratings at TA = 25°C, unless otherwise specified |
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Parameter |
Symbol |
Value |
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Unit |
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Diode reverse voltage |
VR |
40 |
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V |
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Forward current |
IF |
250 |
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mA |
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Non-repetitive peak surge forward current |
IFSM |
800 |
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(t ≤ 10ms) |
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Average forward current (50/60Hz, sinus) |
IFAV |
120 |
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Total power dissipation |
Ptot |
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mW |
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BAT64, TS ≤ 86°C |
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250 |
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BAT64-02V, BAT64-02W, TS ≤ 121°C |
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250 |
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BAT64-04, BAT64-06, BAT64-07, TS ≤ 61°C |
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250 |
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BAT64-04W, BAT64-06W, TS ≤ 111°C |
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250 |
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BAT64-05, TS ≤ 36°C |
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250 |
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BAT64-05W, TS ≤ 104°C |
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250 |
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Junction temperature |
Tj |
150 |
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°C |
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Storage temperature |
Tstg |
-55 ... 150 |
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Thermal Resistance |
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Parameter |
Symbol |
Value |
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Unit |
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Junction - soldering point1) |
RthJS |
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K/W |
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BAT64 |
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≤ 255 |
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BAT64-02V, BAT64-02W |
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≤ 115 |
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BAT64-04, BAT64-06, BAT64-07 |
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≤ 355 |
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BAT64-04W, BAT64-06W |
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≤ 155 |
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BAT64-05 |
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≤ 455 |
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BAT64-05W |
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≤ 185 |
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1For calculation of RthJA please refer to Application Note Thermal Resistance
2 |
Mar-10-2004 |
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BAT64... |
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Electrical Characteristics at TA = 25°C, unless otherwise specified |
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Parameter |
Symbol |
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Values |
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Unit |
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min. |
typ. |
max. |
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DC Characteristics |
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Breakdown voltage |
V(BR) |
40 |
- |
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V |
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I(BR) = 10 µA |
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Reverse current |
IR |
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µA |
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VR = 30 V |
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2 |
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VR = 30 V, TA = 85 °C |
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200 |
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Forward voltage |
VF |
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mV |
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IF = 1 mA |
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270 |
320 |
350 |
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IF = 10 mA |
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310 |
385 |
430 |
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IF = 30 mA |
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370 |
440 |
520 |
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IF = 100 mA |
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500 |
570 |
750 |
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AC Characteristics |
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Diode capacitance |
CT |
- |
4 |
6 |
pF |
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VR = 1 V, f = 1 MHz |
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Reverse recovery time |
trr |
- |
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5 |
ns |
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IF = 10 mA, IR = 10 mA, measured IR = 1 mA , |
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RL = 100 Ω |
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3 |
Mar-10-2004 |
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