Infineon FP75R12KT4 Data Sheet

/ Technical Information

IGBT-

FP75R12KT4

IGBT-modules

EconoPIM™3 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled 4 Diode

EconoPIM™3 module with trench/fieldstop IGBT4 and Emitter Controlled 4 diode

IGBT, / IGBT,Inverter

Preliminary Data

/ Maximum Rated Values

Tvj = 25°C

VCES

1200

V

Collector-emitter voltage

TC = 95°C, Tvj max = 175°C

IC nom

75

A

Continuous DC collector current

tP = 1 ms

ICRM

150

A

Repetitive peak collector current

TC = 25°C, Tvj max = 175°C

Ptot

385

W

Total power dissipation

VGES

+/-20

V

Gate-emitter peak voltage

/ Characteristic Values

min.

typ.

max.

IC = 75 A, VGE = 15 V

Tvj = 25°C

1,85

2,25

V

Collector-emitter saturation voltage

IC = 75 A, VGE = 15 V

Tvj = 125°C

VCE sat

2,15

V

IC = 75 A, VGE = 15 V

Tvj = 150°C

2,25

V

IC = 2,40 mA, VCE = VGE, Tvj = 25°C

VGEth

5,2

5,8

6,4

V

Gate threshold voltage

VGE = -15 V ... +15 V

QG

0,57

µC

Gate charge

Tvj = 25°C

RGint

10

Ω

Internal gate resistor

f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V

Cies

4,30

nF

Input capacitance

f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V

Cres

0,16

nF

Reverse transfer capacitance

-

VCE = 1200 V, VGE = 0 V, Tvj = 25°C

ICES

1,0

mA

Collector-emitter cut-off current

-

VCE = 0 V, VGE = 20 V, Tvj = 25°C

IGES

100

nA

Gate-emitter leakage current

( )

IC = 75 A, VCE = 600 V

Tvj = 25°C

td on

0,16

µs

Turn-on delay time, inductive load

VGE = ±15 V

Tvj = 125°C

0,17

µs

RGon = 1,1 Ω

Tvj = 150°C

0,17

µs

( )

IC = 75 A, VCE = 600 V

Tvj = 25°C

tr

0,03

µs

Rise time, inductive load

VGE = ±15 V

Tvj = 125°C

0,04

µs

RGon = 1,1 Ω

Tvj = 150°C

0,04

µs

( )

IC = 75 A, VCE = 600 V

Tvj = 25°C

td off

0,34

µs

Turn-off delay time, inductive load

VGE = ±15 V

Tvj = 125°C

0,43

µs

RGoff = 1,1 Ω

Tvj = 150°C

0,45

µs

( )

IC = 75 A, VCE = 600 V

Tvj = 25°C

tf

0,08

µs

Fall time, inductive load

VGE = ±15 V

Tvj = 125°C

0,15

µs

RGoff = 1,1 Ω

Tvj = 150°C

0,17

µs

( )

IC = 75 A, VCE = 600 V, LS = 40 nH

Tvj = 25°C

3,10

mJ

Turn-on energy loss per pulse

VGE = ±15 V, di/dt = 2500 A/µs (Tvj = 150°C) Tvj = 125°C

Eon

6,60

mJ

RGon = 1,1 Ω

Tvj = 150°C

7,65

mJ

(

IC = 75 A, VCE = 600 V, LS = 40 nH

Tvj = 25°C

4,20

mJ

Turn-off energy loss per pulse

VGE = ±15 V, du/dt = 3600 V/µs (Tvj = 150°C)Tvj = 125°C

Eoff

6,40

mJ

RGoff = 1,1 Ω

Tvj = 150°C

7,20

mJ

VGE ≤ 15 V, VCC = 800 V

ISC

SC data

VCEmax = VCES -LsCE ·di/dt

tP ≤ 10 µs, Tvj = 150°C

270

A

IGBT / per IGBT

RthJC

0,39

K/W

Thermal resistance, junction to case

IGBT / per IGBT

RthCH

0,13

K/W

Thermal resistance, case to heatsink

λPaste = 1 W/(m·K) / λgrease = 1 W/(m·K)

Tvj op

-40

150

°C

Temperature under switching conditions

prepared by: AS

date of publication: 2013-11-04

approved by: RS

revision: 2.1

1

/ Technical Information

IGBT-	FP75R12KT4
IGBT-modules

Preliminary Data

, / Diode, Inverter

/ Maximum Rated Values

		Tvj = 25°C	VRRM		1200		V
	Repetitive peak reverse voltage
			IF		75		A
	Continuous DC forward current
		tP = 1 ms	IFRM		150		A
	Repetitive peak forward current
	I2t-	VR = 0 V, tP = 10 ms, Tvj = 125°C	I²t		960		A²s
	I²t - value

/ Characteristic Values				min.	typ.	max.
	IF = 75 A, VGE = 0 V	Tvj = 25°C			1,70	2,15	V
Forward voltage	IF = 75 A, VGE = 0 V	Tvj = 125°C	VF		1,65		V
	IF = 75 A, VGE = 0 V	Tvj = 150°C			1,65		V
	IF = 75 A, - diF/dt = 2500 A/µs (Tvj=150°C)	Tvj = 25°C			88,0		A
Peak reverse recovery current	VR = 600 V	Tvj = 125°C	IRM		89,0		A
	VGE = -15 V	Tvj = 150°C			90,0		A
	IF = 75 A, - diF/dt = 2500 A/µs (Tvj=150°C)	Tvj = 25°C			7,30		µC
Recovered charge	VR = 600 V	Tvj = 125°C	Qr		13,0		µC
	VGE = -15 V	Tvj = 150°C			14,5		µC
	IF = 75 A, - diF/dt = 2500 A/µs (Tvj=150°C)	Tvj = 25°C			2,65		mJ
Reverse recovery energy	VR = 600 V	Tvj = 125°C	Erec		4,60		mJ
	VGE = -15 V	Tvj = 150°C			5,65		mJ
	/ per diode		RthJC			0,62	K/W
Thermal resistance, junction to case
	/ per diode		RthCH		0,205		K/W
Thermal resistance, case to heatsink	λPaste = 1 W/(m·K) / λgrease = 1 W/(m·K)
			Tvj op	-40		150	°C
Temperature under switching conditions

, / Diode, Rectifier

/ Maximum Rated Values

		Tvj = 25°C	VRRM		1600		V
	Repetitive peak reverse voltage
	( )	TC = 80°C	IFRMSM		80		A
	Maximum RMS forward current per chip
		TC = 80°C	IRMSM		140		A
	Maximum RMS current at rectifier output
		tp = 10 ms, Tvj = 25°C	IFSM		600		A
	Surge forward current	tp = 10 ms, Tvj = 150°C			470		A
	I2t-	tp = 10 ms, Tvj = 25°C	I²t		1800		A²s
	I²t - value	tp = 10 ms, Tvj = 150°C			1100		A²s

/ Characteristic Values				min.	typ.	max.
	Tvj = 150°C, IF = 75 A		VF		1,15		V
Forward voltage
	Tvj = 150°C, VR = 1600 V		IR		1,00		mA
Reverse current
	/ per diode		RthJC			0,65	K/W
Thermal resistance, junction to case
	/ per diode		RthCH		0,215		K/W
Thermal resistance, case to heatsink	λPaste = 1 W/(m·K) / λgrease = 1 W/(m·K)
			Tvj op	-40		150	°C
Temperature under switching conditions
prepared by: AS	date of publication: 2013-11-04
approved by: RS	revision: 2.1

2

/ Technical Information

IGBT-	FP75R12KT4
IGBT-modules

Preliminary Data

IGBT, - / IGBT, Brake-Chopper

/ Maximum Rated Values

		Tvj = 25°C	VCES		1200		V
	Collector-emitter voltage
		TC = 95°C, Tvj max = 175°C	IC nom		50		A
	Continuous DC collector current
		tP = 1 ms	ICRM		100		A
	Repetitive peak collector current
		TC = 25°C, Tvj max = 175°C	Ptot		280		W
	Total power dissipation
			VGES		+/-20		V
	Gate-emitter peak voltage

	/ Characteristic Values					min.	typ.	max.
		IC = 50 A, VGE = 15 V		Tvj = 25°C			1,85	2,25	V
	Collector-emitter saturation voltage	IC = 50 A, VGE = 15 V		Tvj = 125°C	VCE sat		2,15		V
		IC = 50 A, VGE = 15 V		Tvj = 150°C			2,25		V
		IC = 1,60 mA, VCE = VGE, Tvj = 25°C			VGEth	5,2	5,8	6,4	V
	Gate threshold voltage
		VGE = -15 V ... +15 V			QG		0,38		µC
	Gate charge
		Tvj = 25°C			RGint		4,0		Ω
	Internal gate resistor
		f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V			Cies		2,80		nF
	Input capacitance
		f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V			Cres		0,10		nF
	Reverse transfer capacitance
	-	VCE = 1200 V, VGE = 0 V, Tvj = 25°C			ICES			1,0	mA
	Collector-emitter cut-off current
	-	VCE = 0 V, VGE = 20 V, Tvj = 25°C			IGES			100	nA
	Gate-emitter leakage current
	( )	IC = 50 A, VCE = 600 V		Tvj = 25°C	td on		0,16		µs
	Turn-on delay time, inductive load	VGE = ±15 V		Tvj = 125°C			0,17		µs
		RGon = 15 Ω		Tvj = 150°C			0,17		µs
	( )	IC = 50 A, VCE = 600 V		Tvj = 25°C	tr		0,03		µs
	Rise time, inductive load	VGE = ±15 V		Tvj = 125°C			0,04		µs
		RGon = 15 Ω		Tvj = 150°C			0,04		µs
	( )	IC = 50 A, VCE = 600 V		Tvj = 25°C	td off		0,33		µs
	Turn-off delay time, inductive load	VGE = ±15 V		Tvj = 125°C			0,43		µs
		RGoff = 15 Ω		Tvj = 150°C			0,45		µs
	( )	IC = 50 A, VCE = 600 V		Tvj = 25°C	tf		0,08		µs
	Fall time, inductive load	VGE = ±15 V		Tvj = 125°C			0,15		µs
		RGoff = 15 Ω		Tvj = 150°C			0,17		µs
	( )	IC = 50 A, VCE = 600 V, LS = 40 nH		Tvj = 25°C			5,70		mJ
	Turn-on energy loss per pulse	VGE = ±15 V		Tvj = 125°C	Eon		7,70		mJ
		RGon = 15 Ω		Tvj = 150°C			8,40		mJ
	(	IC = 50 A, VCE = 600 V, LS = 40 nH		Tvj = 25°C			2,80		mJ
	Turn-off energy loss per pulse	VGE = ±15 V		Tvj = 125°C	Eoff		4,30		mJ
		RGoff = 15 Ω		Tvj = 150°C			4,80		mJ
		VGE ≤ 15 V, VCC = 800 V			ISC
	SC data	VCEmax = VCES -LsCE ·di/dt	tP ≤ 10 µs, Tvj = 125°C				180		A
		IGBT / per IGBT			RthJC			0,54	K/W
	Thermal resistance, junction to case
		IGBT / per IGBT			RthCH		0,245		K/W
	Thermal resistance, case to heatsink	λPaste = 1 W/(m·K) / λgrease = 1 W/(m·K)
					Tvj op	-40		150	°C
	Temperature under switching conditions
	prepared by: AS	date of publication: 2013-11-04
	approved by: RS	revision: 2.1

3

/ Technical Information

IGBT-	FP75R12KT4
IGBT-modules

Preliminary Data

- / Diode, Brake-Chopper

/ Maximum Rated Values

		Tvj = 25°C	VRRM		1200		V
	Repetitive peak reverse voltage
			IF		25		A
	Continuous DC forward current
		tP = 1 ms	IFRM		50		A
	Repetitive peak forward current
	I2t-	VR = 0 V, tP = 10 ms, Tvj = 125°C	I²t		90,0		A²s
	I²t - value	VR = 0 V, tP = 10 ms, Tvj = 150°C			80,0		A²s

/ Characteristic Values				min.	typ.	max.
	IF = 25 A, VGE = 0 V	Tvj = 25°C			1,75	2,25	V
Forward voltage	IF = 25 A, VGE = 0 V	Tvj = 125°C	VF		1,75		V
	IF = 25 A, VGE = 0 V	Tvj = 150°C			1,75		V
	IF = 25 A, - diF/dt = 1200 A/µs (Tvj=150°C)	Tvj = 25°C			39,0		A
Peak reverse recovery current	VR = 600 V	Tvj = 125°C	IRM		40,0		A
		Tvj = 150°C			41,0		A
	IF = 25 A, - diF/dt = 1200 A/µs (Tvj=150°C)	Tvj = 25°C			2,40		µC
Recovered charge	VR = 600 V	Tvj = 125°C	Qr		4,10		µC
		Tvj = 150°C			4,40		µC
	IF = 25 A, - diF/dt = 1200 A/µs (Tvj=150°C)	Tvj = 25°C			0,90		mJ
Reverse recovery energy	VR = 600 V	Tvj = 125°C	Erec		1,50		mJ
		Tvj = 150°C			1,70		mJ
	/ per diode		RthJC			1,35	K/W
Thermal resistance, junction to case
	/ per diode		RthCH		0,61		K/W
Thermal resistance, case to heatsink	λPaste = 1 W/(m·K) / λgrease = 1 W/(m·K)
			Tvj op	-40		150	°C
Temperature under switching conditions

/ NTC-Thermistor

	/ Characteristic Values				min.	typ.	max.
		TC	= 25°C	R25		5,00		kΩ
	Rated resistance
	R100	TC	= 100°C, R100 = 493 Ω	R/R	-5		5	%
	Deviation of R100
		TC	= 25°C	P25			20,0	mW
	Power dissipation
	B-	R2	= R25 exp [B25/50(1/T2 - 1/(298,15 K))]	B25/50		3375		K
	B-value
	B-	R2	= R25 exp [B25/80(1/T2 - 1/(298,15 K))]	B25/80		3411		K
	B-value
	B-	R2	= R25 exp [B25/100(1/T2 - 1/(298,15 K))]	B25/100		3433		K
	B-value
	Specification according to the valid application note.

prepared by: AS	date of publication: 2013-11-04
approved by: RS	revision: 2.1

4