European Power-
Semiconductor and
Electronics Company
Marketing Information
BSM 50 GD 170 DL
118.11 |
94.5 |
119 |
121.5 |
99.9 |
4 x 19.05 = 76.2 |
19.053.81
19 |
18 |
17 |
16 |
15 |
1 |
2 |
3 |
4 |
5 |
6 |
7 |
8 |
9 |
10 11 |
12 |
3.81 |
|
1.15x1.0 |
|
15.24 |
|
|
5 x 15.24 =76.2 |
|
|
|
110 |
21 |
connections to be made externally |
|
|
13 |
|
1 |
5 |
9 |
2 |
6 |
10 |
|
|
19 |
|
|
17 |
|
|
15 |
3 |
7 |
11 |
4 |
8 |
12 |
20 |
|
14 |
01.07.1998
BSM 50 GD 170 DL
Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties
Kollektor-Emitter-Sperrspannung |
collector-emitter voltage |
Kollektor-Dauergleichstrom |
DC-collector current |
Periodischer Kollektor Spitzenstrom |
repetitive peak collector current |
Gesamt-Verlustleistung |
total power dissipation |
Gate-Emitter-Spitzenspannung |
gate-emitter peak voltage |
Dauergleichstrom |
DC forward current |
Periodischer Spitzenstrom |
repetitive peak forw. current |
Grenzlastintegral der Diode |
I2t - value, Diode |
Isolations-Prüfspannung |
insulation test voltage |
TC = 80°C
TC = 25°C
tp = 1 ms, TC = 80°C TC = 25°C, Transistor
tp = 1 ms
VR = 0V, tp = 10ms, TVj = 125°C RMS, f = 50 Hz, t = 1 min.
Charakteristische Werte / Characteristic values: Transistor
Kollektor-Emitter Sättigungsspannung
Gate-Schwellenspannung
Eingangskapazität
Kollektor-Emitter Reststrom
Gate-Emitter Reststrom
Einschaltverzögerungszeit (induktive Last)
Anstiegszeit (induktive Last)
Abschaltverzögerungszeit (ind. Last)
Fallzeit (induktive Last)
Einschaltverlustenergie pro Puls
Abschaltverlustenergie pro Puls
Kurzschlußverhalten
Modulinduktivität
collector-emitter saturation voltage
gate threshold voltage input capacitance
collector-emitter cut-off current
gate-emitter leakage current turn-on delay time (inductive load)
rise time (inductive load)
turn off delay time (inductive load)
fall time (inductive load)
turn-on energy loss per pulse
turn-off energy loss per pulse
SC Data
stray inductance module
IC = 50A, VGE = 15V, Tvj = 25°C IC = 50A, VGE = 15V, Tvj = 125°C IC = 2,5mA, VCE = VGE, Tvj = 25°C
f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V VCE = 1700V, VGE = 0V, Tvj = 25°C
VCE = 1700V, VGE = 0V, Tvj = 125°C VCE = 0V, VGE = 20V, Tvj = 25°C
IC = 50A, VCE = 900V
VGE = ±15V, RG = 30Ω, Tvj = 25°C VGE = ±15V, RG = 30Ω, Tvj = 125°C IC = 50A, VCE = 900V
VGE = ±15V, RG = 30Ω, Tvj = 25°C VGE = ±15V, RG = 30Ω, Tvj = 125°C IC = 50A, VCE = 900V
VGE = ±15V, RG = 30Ω, Tvj = 25°C VGE = ±15V, RG = 30Ω, Tvj = 125°C IC = 50A, VCE = 900V
VGE = ±15V, RG = 30Ω, Tvj = 25°C VGE = ±15V, RG = 30Ω, Tvj = 125°C IC = 50A, VCE = 900V, VGE = 15V RG = 30Ω, Tvj = 125°C, LS = 60nH IC = 50A, VCE = 900V, VGE = 15V RG = 30Ω, Tvj = 125°C, LS = 60nH tP ≤ 10µsec, VGE ≤ 15V, RG = 30Ω TVj≤125°C, VCC=1000V VCEmax=VCES -LsCE x dI/dt
Charakteristische Werte / Characteristic values: Diode
Durchlaßspannung |
forward voltage |
Rückstromspitze |
peak reverse recovery current |
Sperrverzögerungsladung |
recovered charge |
Abschaltenergie pro Puls |
reverse recovery energy |
IF = 50A, VGE = 0V, Tvj = 25°C IF = 50A, VGE = 0V, Tvj = 125°C IF = 50A, - diF/dt = 750A/µsec
VR = 900V, VGE = -10V, Tvj = 25°C VR = 900V, VGE = -10V, Tvj = 125°C IF = 50A, - diF/dt = 750A/µsec
VR = 900V, VGE = -10V, Tvj = 25°C VR = 900V, VGE = -10V, Tvj = 125°C IF = 50A, - diF/dt = 750A/µsec
VR = 900V, VGE = -10V, Tvj = 25°C VR = 900V, VGE = -10V, Tvj = 125°C
Thermische Eigenschaften / Thermal properties
Innerer Wärmewiderstand |
thermal resistance, junction to case |
Transistor / transistor, DC |
|
|
Diode / diode, DC |
Übergangs-Wärmewiderstand |
thermal resistance, case to heatsink |
pro Module / per Module |
|
|
dPaste ≤ 50µm / dgrease ≤ 50µm |
Höchstzul. Sperrschichttemperatur |
max. junction temperature |
|
Betriebstemperatur |
operating temperature |
|
Lagertemperatur |
storage temperature |
|
Mechanische Eigenschaften / Mechanical properties
Innere Isolation |
internal insulation |
Kriechstrecke |
creepage distance |
Luftstrecke |
clearance |
CTI |
comperative tracking index |
Anzugsdrehmoment f. mech. Befestigung |
mounting torque |
Gewicht |
weight |
vorläufige Daten preliminary data
VCES |
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|
1700 |
V |
IC,nom. |
|
|
50 |
A |
IC |
|
|
100 |
A |
ICRM |
|
|
100 |
A |
Ptot |
|
|
480 |
W |
VGES |
|
|
± 20 V |
|
IF |
|
|
50 |
A |
IFRM |
|
|
100 |
A |
I2t |
|
|
1100 |
A2s |
VISOL |
|
|
3,4 |
kV |
|
min. |
typ. |
max. |
|
vCE sat |
- |
2,7 |
3,3 |
V |
|
- |
3,2 |
- |
V |
vGE(th) |
4,5 |
5,5 |
6,5 |
V |
Cies |
- |
3,5 |
- |
nF |
ICES |
- |
0,02 |
0,1 |
mA |
|
- |
1,5 |
- |
mA |
IGES |
- |
- |
100 |
nA |
td,on |
|
|
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- |
0,1 |
- µs |
|
|
- |
0,1 |
- µs |
|
tr |
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- |
0,1 |
- µs |
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- |
0,1 |
- µs |
|
td,off |
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- |
0,8 |
- µs |
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- |
0,9 |
- µs |
|
tf |
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- |
0,03 |
- µs |
|
|
- |
0,03 |
- µs |
|
Eon |
|
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|
- |
26 |
- mWs |
|
Eoff |
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|
- |
14,5 |
- mWs |
|
ISC |
|
|
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|
|
- |
200 |
- A |
|
LsCE |
- |
25 |
- nH |
|
VF |
- |
2,2 |
2,6 |
V |
|
- |
2 |
- V |
|
IRM |
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|
- |
36 |
- A |
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- |
56 |
- A |
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Qr |
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- |
6 |
- µAs |
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|
- |
12 |
- µAs |
|
Erec |
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- |
2 |
- mWs |
|
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- |
4 |
- mWs |
|
RthJC |
- |
- |
0,26 |
K/W |
|
- |
- |
0,56 |
K/W |
RthCK |
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|
- |
- |
0,011 |
K/W |
Tvj |
- |
- |
150 |
°C |
Top |
-40 |
- |
125 |
°C |
Tstg |
-40 |
- |
125 |
°C |
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Al2O3 |
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16 mm |
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11 mm |
|
|
|
|
225 |
|
max. |
|
|
5 |
Nm |
G |
|
|
300 g |
|
Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehörigen Technischen Erläuterungen. This technical information specifies semiconductor devices but promises no characteristics. It is valid in combination with the belonging technical notes.
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