Infineon BCR112, BCR112F, BCR112W Schematic [ru]

BCR112...

NPN Silicon Digital Transistor

•Switching circuit, inverter, interface circuit, driver circuit

•Built in bias resistor (R1=4.7kΩ , R2=4.7kΩ )

•BCR112U: Two internally isolated transistors with good matching

in one multichip package

•BCR112U: For orientation in reel see package information below

•Pb-free (RoHS compliant) package1)

•Qualified according AEC Q101

BCR112/F

BCR112W

C

3

R1

R 2

1

2

BE

EHA07184

Type	Marking		Pin Configuration					Package
BCR112	WFs	1=B	2=E	3=C	-	-	-	SOT23
BCR112F	WFs	1=B	2=E	3=C	-	-	-	TSFP-3
BCR112W	WFs	1=B	2=E	3=C	-	-	-	SOT323

1Pb-containing package may be available upon special request

1	2007-09-17

							BCR112...
	Maximum Ratings
	Parameter		Symbol		Value			Unit
	Collector-emitter voltage		VCEO			50		V
	Collector-base voltage		VCBO			50
	Input forward voltage		Vi(fwd)			30
	Input reverse voltage		Vi(rev)			10
	Collector current		IC		100			mA
	Total power dissipation-		Ptot					mW
	BCR112, TS ≤ 102°C				200
	BCR112F, TS ≤ 128°C				250
	BCR112W, TS ≤ 124°C				250
	Junction temperature		Tj		150			°C
	Storage temperature		Tstg		-65 ... 150
	Thermal Resistance
	Parameter		Symbol		Value			Unit
	Junction - soldering point1)		RthJS					K/W
	BCR112				≤	240
	BCR112F				≤	90
	BCR112W				≤	105
						-
	1For calculation of RthJA please refer to Application Note Thermal Resistance

2	2007-09-17

BCR112...

Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter	Symbol		Values		Unit
		min.	typ.	max.
DC Characteristics
Collector-emitter breakdown voltage	V(BR)CEO	50	-	-	V
IC = 100 µA, IB = 0
Collector-base breakdown voltage	V(BR)CBO	50	-	-
IC = 10 µA, IE = 0
Collector-base cutoff current	ICBO	-	-	100	nA
VCB = 40 V, IE = 0
Emitter-base cutoff current	IEBO	-	-	1.61	mA
VEB = 10 V, IC = 0
DC current gain1)	hFE	20	-	-	-
IC = 5 mA, VCE = 5 V
Collector-emitter saturation voltage1)	V	-	-	0.3	V
	CEsat
IC = 10 mA, IB = 0.5 mA
Input off voltage	Vi(off)	0.8	-	1.5
IC = 100 µA, VCE = 5 V
Input on voltage	Vi(on)	1	-	2.5
IC = 2 mA, VCE = 0.3 V
Input resistor	R1	3.2	4.7	6.2	kΩ
Resistor ratio	R1/R2	0.9	1	1.1	-
AC Characteristics
Transition frequency	fT	-	140	-	MHz
IC = 10 mA, VCE = 5 V, f = 100 MHz
Collector-base capacitance	Ccb	-	3	-	pF
VCB = 10 V, f = 1 MHz
1Pulse test: t < 300µs; D < 2%

3	2007-09-17

									BCR112...
DC current gain hFE = ƒ(IC)					Collector-emitter saturation voltage
VCE = 5 V (common emitter configuration)					VCEsat = ƒ(IC), IC/IB = 20
10 3						0.5
						V
10 2						0.4
FE					Vcesat	0.35
						0.3
h
10 1						0.25	-40 °C
							-25 °C
						0.2	25 °C
	-40 °C						85 °C
						0.15	125 °C
	-25 °C
10 0
	25 °C
	85 °C					0.1
	125 °C
						0.05
10 -1	10 -3	10 -2	A	10 -1		010 -3	10 -2		A	10 -1
10 -4
			IC						IC
Input on Voltage Vi(on) =		ƒ(IC)			Input off voltage Vi(off) =			ƒ(IC)

VCE = 0.3V (common emitter configuration)

VCE = 5V (common emitter configuration)

10 1					10 1
	-40 °C					-40 °C
	-25 °C					-25 °C
V	25 °C				V	25 °C
	85 °C					85 °C
i(on)	125 °C				i(off)	125 °C
V					V
10 0					10 0
10 -1	10 -4	10 -3	10 -2	A 10 -1	10 -1	10 -4	10 -3	10 -2	A 10 -1
10 -5					10 -5
				IC					IC
					4			2007-09-17