Technische Information / technical information
IGBT-Module |
FZ1200R12KE3 |
IGBT-Modules |
vorläufige Daten preliminary data
Höchstzulässige Werte / maximum rated values
Elektrische Eigenschaften / electrical properties
Kollektor Emitter Sperrspannung |
Tvj= 25°C |
VCES |
1200 |
V |
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collector emitter voltage |
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Kollektor Dauergleichstrom |
Tc= 80°C |
IC, nom |
1200 |
A |
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DC collector current |
Tc= 25°C |
IC |
1700 |
A |
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Periodischer Kollektor Spitzenstrom |
tp= 1ms, Tc= 80°C |
ICRM |
2400 |
A |
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repetitive peak collector current |
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Gesamt Verlustleistung |
Tc= 25°C; Transistor |
Ptot |
5,6 |
kW |
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total power dissipation |
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Gate Emitter Spitzenspannung |
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VGES |
+/- 20 |
V |
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gate emitter peak voltage |
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Dauergleichstrom |
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IF |
1200 |
A |
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DC forward current |
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Periodischer Spitzenstrom |
tp= 1ms |
IFRM |
2400 |
A |
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repetitive peak forward current |
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Grenzlastintegral |
VR= 0V, tp= 10ms, Tvj= 125°C |
I²t |
300 |
k A²s |
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I²t value |
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Isolations Prüfspannung |
RMS, f= 50Hz, t= 1min. |
VISOL |
2,5 |
kV |
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insulation test voltage |
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Charakteristische Werte / characteristic values
Transistor Wechselrichter / transistor inverter |
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min. |
typ. |
max. |
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Kollektor Emitter Sättigungsspannung |
IC= 1200A, VGE= 15V, Tvj= 25°C, |
VCEsat |
- |
1,7 |
2,15 |
V |
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collector emitter satration voltage |
IC= 1200A, VGE= 15V, Tvj= 125°C, |
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2 |
t.b.d. |
V |
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Gate Schwellenspannung |
IC= 48mA, VCE= VGE, Tvj= 25°C, |
VGE(th) |
5 |
5,8 |
6,5 |
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gate threshold voltage |
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Gateladung |
VGE= -15V...+15V; VCE=...V |
QG |
- |
11,5 |
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µC |
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gate charge |
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Eingangskapazität |
f= 1MHz, Tvj= 25°C, VCE= 25V, VGE= 0V |
Cies |
- |
86 |
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nF |
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input capacitance |
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Rückwirkungskapazität |
f= 1MHz, Tvj= 25°C, VCE= 25V, VGE= 0V |
Cres |
- |
4 |
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nF |
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reverse transfer capacitance |
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Kollektor Emitter Reststrom |
VCE= 1200V, VGE= 0V, Tvj= 25°C, |
ICES |
- |
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5 |
mA |
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collector emitter cut off current |
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Gate Emitter Reststrom |
VCE= 0V, VGE= 20V, Tvj= 25°C |
IGES |
- |
- |
400 |
nA |
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gate emitter leakage current |
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prepared by: MOD-D2; Mark Münzer |
date of publication: 2002-07-29 |
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approved: SM TM; Christoph Lübke |
revision: 2.0 |
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DB_FZ1200R12KE3_2.0.xls
2002-07-29
1 (8)
Technische Information / technical information
IGBT-Module |
FZ1200R12KE3 |
IGBT-Modules |
vorläufige Daten preliminary data
Charakteristische Werte / characteristic values
Transistor Wechselrichter / transistor inverter |
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min. |
typ. |
max. |
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Einschaltverzögerungszeit (ind. Last) |
IC= 1200A, VCC= 600V |
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VGE=±15V, RGon=1,8 Tvj=25°C |
td,on |
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0,54 |
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µs |
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turn on delay time (inductive load) |
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VGE=±15V, RGon=1,8 , Tvj= 125°C |
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0,64 |
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µs |
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Anstiegszeit (induktive Last) |
IC= 1200A, VCC= 600V |
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VGE=±15V, RGon=1,8 Tvj=25°C |
tr |
- |
0,22 |
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µs |
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rise time (inductive load) |
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VGE=±15V, RGon=1,8 , Tvj= 125°C |
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0,23 |
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µs |
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Abschaltverzögerungszeit (ind. Last) |
IC= 1200A, VCC= 600V |
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VGE=±15V, RGoff=0,62 , Tvj=25°C |
td,off |
- |
0,82 |
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µs |
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turn off delay time (inductive load) |
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VGE=±15V, RGoff=0,62 ,Tvj= 125°C |
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0,96 |
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µs |
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Fallzeit (induktive Last) |
IC= 1200A, VCC= 600V |
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VGE=±15V, RGoff=0,62 , Tvj=25°C |
tf |
- |
0,15 |
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µs |
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fall time (inductive load) |
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VGE=±15V, RGoff=0,62 ,Tvj= 125°C |
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0,18 |
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µs |
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Einschaltverlustenergie pro Puls |
IC= 1200A, VCC= 600V, L = 60nH |
Eon |
- |
245 |
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mJ |
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turn on energy loss per pulse |
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VGE=±15V, RGon=1,8 , Tvj= 125°C |
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Ausschaltverlustenergie pro Puls |
IC= 1200A, VCC= 600V, L = 60nH |
Eoff |
- |
190 |
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mJ |
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turn off energy loss per pulse |
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VGE=±15V, RGoff=0,62 , Tvj= 125°C |
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Kurzschlussverhalten |
tP 10µs, VGE 15V, TVj 125°C |
ISC |
- |
4800 |
- |
A |
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SC data |
VCC= 900V, VCEmax= VCES - L CE · di/dt |
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Modulindiktivität |
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L CE |
- |
12 |
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nH |
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stray inductance module |
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Leitungswiderstand, Anschluss-Chip |
Tc= 25°C |
RCC´/EE´ |
- |
0,19 |
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m |
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lead resistance, terminal-chip |
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Charakteristische Werte / characteristic values
Diode Wechselrichter / diode inverter
Durchlassspannung |
IF= IC, nom, VGE= 0V, Tvj= 25°C |
VF |
- |
2,0 |
2,5 |
V |
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forward voltage |
IF= IC, nom, VGE= 0V, Tvj= 125°C |
- |
1,8 |
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V |
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Rückstromspitze |
IF=IC,nom, -diF/dt= 4800A/µs |
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VR= 600V, VGE= -15V, Tvj= 25°C |
IRM |
- |
390 |
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A |
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peak reverse recovery current |
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VR= 600V, VGE= -15V, Tvj= 125°C |
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620 |
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A |
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Sperrverzögerungsladung |
IF=IC,nom, -diF/dt= 4800A/µs |
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VR= 600V, VGE= -15V, Tvj= 25°C |
Qr |
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55 |
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µC |
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recoverred charge |
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VR= 600V, VGE= -15V, Tvj= 125°C |
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150 |
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µC |
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Ausschaltenergie pro Puls |
IF=IC,nom, -diF/dt= 4800A/µs |
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VR= 600V, VGE= -15V, Tvj= 25°C |
Erec |
- |
13 |
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mJ |
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reverse recovery energy |
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VR= 600V, VGE= -15V, Tvj= 125°C |
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35 |
- |
mJ |
DB_FZ1200R12KE3_2.0.xls
2002-07-29
2 (8)
Technische Information / technical information
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IGBT-Module |
FZ1200R12KE3 |
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IGBT-Modules |
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vorläufige Daten |
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preliminary data |
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Thermische Eigenschaften / thermal properties |
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min. |
typ. |
max. |
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Innerer Wärmewiderstand |
pro Transistor /per transistor, DC |
RthJC |
- |
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0,022 |
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K/W |
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thermal resistance, junction to case |
pro Diode/per Diode, DC |
RthJC |
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0,040 |
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K/W |
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Übergangs Wärmewiderstand |
pro Modul / per module |
RthCK |
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0,006 |
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K/W |
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thermal resistance, case to heatsink |
Paste/ grease =1W/m*K |
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Höchstzulässige Sperrschichttemp. |
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Tvj max |
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150 |
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°C |
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maximum junction temperature |
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Betriebstemperatur |
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Tvj op |
-40 |
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125 |
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°C |
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operation temperature |
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Lagertemperatur |
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Tstg |
-40 |
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125 |
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°C |
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storage temperature |
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Mechanische Eigenschaften / mechanical properties |
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Gehäuse, siehe Anlage |
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case, see appendix |
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Innere Isolation |
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Al2O3 |
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internal insulation |
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Kriechstrecke |
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32 |
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mm |
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creepage distance |
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Luftstrecke |
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20 |
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mm |
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clearance |
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CTI |
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>400 |
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comperative tracking index |
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Anzugsdrehmoment, mech. Befestigung |
Schraube /screw M5 |
M |
4,25 |
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5,75 |
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Nm |
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mounting torque |
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Anzugsdrehmoment, elektr. Anschlüsse |
Anschlüsse / terminal M4 |
M |
1,7 |
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2,3 |
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Nm |
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terminal connection torque |
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Anschlüsse / terminal M8 |
M |
8 |
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10 |
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Nm |
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Gewicht |
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G |
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1500 |
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g |
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weight |
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Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehörigen technischen Erläuterungen.
This technical information specifies semiconductor devices but promises no characteristics. It is valid with the belonging technical notes.
DB_FZ1200R12KE3_2.0.xls
2002-07-29
3 (8)
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